FDC637BNZ
  • Share:

onsemi FDC637BNZ

Manufacturer No:
FDC637BNZ
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 20V 6.2A SUPERSOT6
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The FDC637BNZ is an N-Channel MOSFET produced by onsemi, utilizing the advanced PowerTrench® technology. This MOSFET is optimized for high-speed and low-voltage operations, providing excellent performance for both analog and digital signal switching applications. It is designed to offer exceptional power dissipation in a small footprint, making it suitable for various general usage applications.

Key Specifications

ParameterValue
TechnologyPowerTrench®
PolarisationN-Channel
Drain-source voltage (Vds)20V
Drain current (Id)6.2A
Power dissipation (Pd)1.6W
Package/CaseSuperSOT-6 (SSOT-6)
Gate-source voltage (Vgs)±20V
On-state resistance (Rds(on))24mΩ at Vgs = 4.5V, Id = 6.2A
Gate charge (Qg)12nC
Minimum operating temperature-55°C
Maximum operating temperature+150°C
Channel modeEnhancement

Key Features

  • Advanced PowerTrench® technology for low on-state resistance and high performance trench technology.
  • Fast switching speed with rise and fall times of 6ns each.
  • Low gate charge (12nC typical) for superior switching performance.
  • Small footprint in SuperSOT-6 package, 72% smaller than standard SO-8 packages.
  • HBM ESD protection level > 2kV typical.
  • Manufactured using green packaging material and is halide-free and RoHS compliant.

Applications

  • Power management systems: Suitable for controlling power flow in automotive, industrial, and consumer electronics.
  • Semiconductor manufacturing equipment: Ideal for high-speed switching and low voltage operation.
  • Medical devices: Can be used in devices such as defibrillators, pacemakers, and other life-support systems where reliability and safety are critical.

Q & A

  • Q: What is the maximum current handling of the FDC637BNZ?
    A: The maximum current handling of the FDC637BNZ is 6.2A at Vgs = 4.5V.
  • Q: Can the FDC637BNZ be used in high-temperature applications?
    A: Yes, the FDC637BNZ can be used in high-temperature applications up to 150°C.
  • Q: Is the FDC637BNZ suitable for use in medical devices?
    A: Yes, the FDC637BNZ is suitable for use in medical devices where reliability and safety are critical.
  • Q: Can the FDC637BNZ be used in automotive applications?
    A: Yes, the FDC637BNZ can be used in automotive applications where high-speed switching and low voltage operation are required.
  • Q: What is the on-state resistance of the FDC637BNZ?
    A: The on-state resistance (Rds(on)) is 24mΩ at Vgs = 4.5V, Id = 6.2A.
  • Q: What is the gate charge of the FDC637BNZ?
    A: The gate charge (Qg) is 12nC.
  • Q: What is the maximum operating temperature of the FDC637BNZ?
    A: The maximum operating temperature is +150°C.
  • Q: Is the FDC637BNZ RoHS compliant?
    A: Yes, the FDC637BNZ is RoHS compliant and manufactured using green packaging material.
  • Q: What is the package type of the FDC637BNZ?
    A: The package type is SuperSOT-6 (SSOT-6).
  • Q: What are the rise and fall times of the FDC637BNZ?
    A: The rise and fall times are both 6ns).

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):20 V
Current - Continuous Drain (Id) @ 25°C:6.2A (Ta)
Drive Voltage (Max Rds On, Min Rds On):2.5V, 4.5V
Rds On (Max) @ Id, Vgs:24mOhm @ 6.2A, 4.5V
Vgs(th) (Max) @ Id:1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:12 nC @ 4.5 V
Vgs (Max):±12V
Input Capacitance (Ciss) (Max) @ Vds:895 pF @ 10 V
FET Feature:- 
Power Dissipation (Max):1.6W (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:SuperSOT™-6
Package / Case:SOT-23-6 Thin, TSOT-23-6
0 Remaining View Similar

In Stock

$0.52
1,678

Please send RFQ , we will respond immediately.

Related Product By Categories

STP13NK60Z
STP13NK60Z
STMicroelectronics
MOSFET N-CH 600V 13A TO220AB
STB36NM60ND
STB36NM60ND
STMicroelectronics
MOSFET N-CH 600V 29A D2PAK
FDMT80040DC
FDMT80040DC
onsemi
MOSFET N-CH 40V 420A 8PQFN
BUK7Y4R4-40EX
BUK7Y4R4-40EX
Nexperia USA Inc.
MOSFET N-CH 40V 100A LFPAK56
BUK7240-100A,118
BUK7240-100A,118
Nexperia USA Inc.
MOSFET N-CH 100V 34A DPAK
STB30N65M5
STB30N65M5
STMicroelectronics
MOSFET N-CH 650V 22A D2PAK
STV270N4F3
STV270N4F3
STMicroelectronics
MOSFET N-CH 40V 270A 10POWERSO
STW48NM60N
STW48NM60N
STMicroelectronics
MOSFET N-CH 600V 44A TO247
FQD2N60CTM
FQD2N60CTM
Fairchild Semiconductor
POWER FIELD-EFFECT TRANSISTOR, 1
2N7002BKM,315
2N7002BKM,315
Nexperia USA Inc.
MOSFET N-CH 60V 450MA DFN1006-3
FDN336P-NL
FDN336P-NL
onsemi
MOSFET P-CH 20V 1.3A SUPERSOT3
STS12NH3LL
STS12NH3LL
STMicroelectronics
MOSFET N-CH 30V 12A 8SO

Related Product By Brand

1SMB5927BT3
1SMB5927BT3
onsemi
DIODE ZENER 12V 3W SMB
SBC847BPDXV6T1G
SBC847BPDXV6T1G
onsemi
TRANS NPN/PNP 45V 0.1A SOT-363
BSS138LT7G
BSS138LT7G
onsemi
MOSFET N-CH 50V 200MA SOT23-3
NLV17SZU04DFT2G
NLV17SZU04DFT2G
onsemi
IC INVERTER 1CH 1-INP SC88A
FAN7385MX
FAN7385MX
onsemi
IC GATE DRVR HIGH-SIDE 14SOP
LB11660FV-TLM-H
LB11660FV-TLM-H
onsemi
IC MOTOR DRIVER 4V-15V 16SSOP
MAX809SQ232T1G
MAX809SQ232T1G
onsemi
IC SUPERVISOR 1 CHANNEL SC70-3
LM2575D2T-5R4
LM2575D2T-5R4
onsemi
IC REG BUCK 5V 1A D2PAK-5
NCV4274ADS50R4G
NCV4274ADS50R4G
onsemi
IC REG LINEAR 5V 400MA D2PAK
MC79L15ABPG
MC79L15ABPG
onsemi
IC REG LINEAR -15V 100MA TO92-3
MC33269DTRK-3.3
MC33269DTRK-3.3
onsemi
IC REG LDO 0.8A 3.3V DPAK
MC33375ST-3.0T3
MC33375ST-3.0T3
onsemi
IC REG LINEAR 3V 300MA SOT223