FDC637BNZ
  • Share:

onsemi FDC637BNZ

Manufacturer No:
FDC637BNZ
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 20V 6.2A SUPERSOT6
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The FDC637BNZ is an N-Channel MOSFET produced by onsemi, utilizing the advanced PowerTrench® technology. This MOSFET is optimized for high-speed and low-voltage operations, providing excellent performance for both analog and digital signal switching applications. It is designed to offer exceptional power dissipation in a small footprint, making it suitable for various general usage applications.

Key Specifications

ParameterValue
TechnologyPowerTrench®
PolarisationN-Channel
Drain-source voltage (Vds)20V
Drain current (Id)6.2A
Power dissipation (Pd)1.6W
Package/CaseSuperSOT-6 (SSOT-6)
Gate-source voltage (Vgs)±20V
On-state resistance (Rds(on))24mΩ at Vgs = 4.5V, Id = 6.2A
Gate charge (Qg)12nC
Minimum operating temperature-55°C
Maximum operating temperature+150°C
Channel modeEnhancement

Key Features

  • Advanced PowerTrench® technology for low on-state resistance and high performance trench technology.
  • Fast switching speed with rise and fall times of 6ns each.
  • Low gate charge (12nC typical) for superior switching performance.
  • Small footprint in SuperSOT-6 package, 72% smaller than standard SO-8 packages.
  • HBM ESD protection level > 2kV typical.
  • Manufactured using green packaging material and is halide-free and RoHS compliant.

Applications

  • Power management systems: Suitable for controlling power flow in automotive, industrial, and consumer electronics.
  • Semiconductor manufacturing equipment: Ideal for high-speed switching and low voltage operation.
  • Medical devices: Can be used in devices such as defibrillators, pacemakers, and other life-support systems where reliability and safety are critical.

Q & A

  • Q: What is the maximum current handling of the FDC637BNZ?
    A: The maximum current handling of the FDC637BNZ is 6.2A at Vgs = 4.5V.
  • Q: Can the FDC637BNZ be used in high-temperature applications?
    A: Yes, the FDC637BNZ can be used in high-temperature applications up to 150°C.
  • Q: Is the FDC637BNZ suitable for use in medical devices?
    A: Yes, the FDC637BNZ is suitable for use in medical devices where reliability and safety are critical.
  • Q: Can the FDC637BNZ be used in automotive applications?
    A: Yes, the FDC637BNZ can be used in automotive applications where high-speed switching and low voltage operation are required.
  • Q: What is the on-state resistance of the FDC637BNZ?
    A: The on-state resistance (Rds(on)) is 24mΩ at Vgs = 4.5V, Id = 6.2A.
  • Q: What is the gate charge of the FDC637BNZ?
    A: The gate charge (Qg) is 12nC.
  • Q: What is the maximum operating temperature of the FDC637BNZ?
    A: The maximum operating temperature is +150°C.
  • Q: Is the FDC637BNZ RoHS compliant?
    A: Yes, the FDC637BNZ is RoHS compliant and manufactured using green packaging material.
  • Q: What is the package type of the FDC637BNZ?
    A: The package type is SuperSOT-6 (SSOT-6).
  • Q: What are the rise and fall times of the FDC637BNZ?
    A: The rise and fall times are both 6ns).

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):20 V
Current - Continuous Drain (Id) @ 25°C:6.2A (Ta)
Drive Voltage (Max Rds On, Min Rds On):2.5V, 4.5V
Rds On (Max) @ Id, Vgs:24mOhm @ 6.2A, 4.5V
Vgs(th) (Max) @ Id:1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:12 nC @ 4.5 V
Vgs (Max):±12V
Input Capacitance (Ciss) (Max) @ Vds:895 pF @ 10 V
FET Feature:- 
Power Dissipation (Max):1.6W (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:SuperSOT™-6
Package / Case:SOT-23-6 Thin, TSOT-23-6
0 Remaining View Similar

In Stock

$0.52
1,678

Please send RFQ , we will respond immediately.

Related Product By Categories

BSS84AKM,315
BSS84AKM,315
Nexperia USA Inc.
MOSFET P-CH 50V 230MA DFN1006-3
FDMT80040DC
FDMT80040DC
onsemi
MOSFET N-CH 40V 420A 8PQFN
NTHD3101FT1G
NTHD3101FT1G
onsemi
MOSFET P-CH 20V 3.2A CHIPFET
BSS138PW,115
BSS138PW,115
Nexperia USA Inc.
MOSFET N-CH 60V 320MA SOT323
PHT6NQ10T,135
PHT6NQ10T,135
Nexperia USA Inc.
MOSFET N-CH 100V 3A SOT223
FQD19N10LTM
FQD19N10LTM
onsemi
MOSFET N-CH 100V 15.6A DPAK
STB75NF20
STB75NF20
STMicroelectronics
MOSFET N-CH 200V 75A D2PAK
BSN20BK215
BSN20BK215
Nexperia USA Inc.
SMALL SIGNAL N-CHANNEL MOSFET
BSH112,235
BSH112,235
NXP USA Inc.
MOSFET N-CH 60V 300MA TO236AB
STP80PF55
STP80PF55
STMicroelectronics
MOSFET P-CH 55V 80A TO220AB
STS12NF30L
STS12NF30L
STMicroelectronics
MOSFET N-CH 30V 12A 8SO
2SJ652-1E
2SJ652-1E
onsemi
MOSFET P-CH 60V 28A TO220F-3SG

Related Product By Brand

1SMA5942BT3G
1SMA5942BT3G
onsemi
DIODE ZENER 51V 1.5W SMA
MMSZ16T1G
MMSZ16T1G
onsemi
DIODE ZENER 16V 500MW SOD123
MMBT4401LT1G
MMBT4401LT1G
onsemi
TRANS NPN 40V 0.6A SOT23-3
FCMT125N65S3
FCMT125N65S3
onsemi
MOSFET N-CH 650V 24A 4PQFN
NVHL025N65S3
NVHL025N65S3
onsemi
MOSFET N-CH 650V 75A TO247-3
2N7002LT3
2N7002LT3
onsemi
MOSFET N-CH 60V 115MA SOT23-3
MC74HC32ADTEL
MC74HC32ADTEL
onsemi
IC GATE OR 4CH 2-INP 14TSSOP
NLV17SZU04DFT2G
NLV17SZU04DFT2G
onsemi
IC INVERTER 1CH 1-INP SC88A
NLSV2T244DR2G
NLSV2T244DR2G
onsemi
IC TRNSLTR UNIDIRECTIONAL 8SOIC
CAT24C512C8UTR
CAT24C512C8UTR
onsemi
IC EEPROM 512KBIT I2C 8WLCSP
NCP3232NMNTXG
NCP3232NMNTXG
onsemi
IC REG BUCK ADJUSTABLE 15A 40QFN
NCP584HSN12T1G
NCP584HSN12T1G
onsemi
IC REG LINEAR 1.2V 200MA SOT23-5