FDC637BNZ
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onsemi FDC637BNZ

Manufacturer No:
FDC637BNZ
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 20V 6.2A SUPERSOT6
Delivery:
Payment:
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iso45001
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Product Introduction

Overview

The FDC637BNZ is an N-Channel MOSFET produced by onsemi, utilizing the advanced PowerTrench® technology. This MOSFET is optimized for high-speed and low-voltage operations, providing excellent performance for both analog and digital signal switching applications. It is designed to offer exceptional power dissipation in a small footprint, making it suitable for various general usage applications.

Key Specifications

ParameterValue
TechnologyPowerTrench®
PolarisationN-Channel
Drain-source voltage (Vds)20V
Drain current (Id)6.2A
Power dissipation (Pd)1.6W
Package/CaseSuperSOT-6 (SSOT-6)
Gate-source voltage (Vgs)±20V
On-state resistance (Rds(on))24mΩ at Vgs = 4.5V, Id = 6.2A
Gate charge (Qg)12nC
Minimum operating temperature-55°C
Maximum operating temperature+150°C
Channel modeEnhancement

Key Features

  • Advanced PowerTrench® technology for low on-state resistance and high performance trench technology.
  • Fast switching speed with rise and fall times of 6ns each.
  • Low gate charge (12nC typical) for superior switching performance.
  • Small footprint in SuperSOT-6 package, 72% smaller than standard SO-8 packages.
  • HBM ESD protection level > 2kV typical.
  • Manufactured using green packaging material and is halide-free and RoHS compliant.

Applications

  • Power management systems: Suitable for controlling power flow in automotive, industrial, and consumer electronics.
  • Semiconductor manufacturing equipment: Ideal for high-speed switching and low voltage operation.
  • Medical devices: Can be used in devices such as defibrillators, pacemakers, and other life-support systems where reliability and safety are critical.

Q & A

  • Q: What is the maximum current handling of the FDC637BNZ?
    A: The maximum current handling of the FDC637BNZ is 6.2A at Vgs = 4.5V.
  • Q: Can the FDC637BNZ be used in high-temperature applications?
    A: Yes, the FDC637BNZ can be used in high-temperature applications up to 150°C.
  • Q: Is the FDC637BNZ suitable for use in medical devices?
    A: Yes, the FDC637BNZ is suitable for use in medical devices where reliability and safety are critical.
  • Q: Can the FDC637BNZ be used in automotive applications?
    A: Yes, the FDC637BNZ can be used in automotive applications where high-speed switching and low voltage operation are required.
  • Q: What is the on-state resistance of the FDC637BNZ?
    A: The on-state resistance (Rds(on)) is 24mΩ at Vgs = 4.5V, Id = 6.2A.
  • Q: What is the gate charge of the FDC637BNZ?
    A: The gate charge (Qg) is 12nC.
  • Q: What is the maximum operating temperature of the FDC637BNZ?
    A: The maximum operating temperature is +150°C.
  • Q: Is the FDC637BNZ RoHS compliant?
    A: Yes, the FDC637BNZ is RoHS compliant and manufactured using green packaging material.
  • Q: What is the package type of the FDC637BNZ?
    A: The package type is SuperSOT-6 (SSOT-6).
  • Q: What are the rise and fall times of the FDC637BNZ?
    A: The rise and fall times are both 6ns).

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):20 V
Current - Continuous Drain (Id) @ 25°C:6.2A (Ta)
Drive Voltage (Max Rds On, Min Rds On):2.5V, 4.5V
Rds On (Max) @ Id, Vgs:24mOhm @ 6.2A, 4.5V
Vgs(th) (Max) @ Id:1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:12 nC @ 4.5 V
Vgs (Max):±12V
Input Capacitance (Ciss) (Max) @ Vds:895 pF @ 10 V
FET Feature:- 
Power Dissipation (Max):1.6W (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:SuperSOT™-6
Package / Case:SOT-23-6 Thin, TSOT-23-6
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