Overview
The FDC637AN is a single N-Channel MOSFET produced by onsemi, utilizing their advanced PowerTrench process. This technology is specifically designed to minimize on-state resistance while maintaining low gate charge, resulting in superior switching performance. The device is packaged in a SuperSOT-6 package, which offers a significantly smaller footprint compared to standard SO-8 and TSSOP-8 packages, making it ideal for space-constrained applications.
Key Specifications
| Parameter | Test Conditions | Min | Typ | Max | Units |
|---|---|---|---|---|---|
| Drain-Source Voltage (VDSS) | VGS = 0 V, ID = 250 µA | - | - | 20 | V |
| Gate-Source Voltage (VGSS) | - | - | - | ±8 | V |
| Continuous Drain Current (ID) | - | - | - | 6.2 | A |
| Pulsed Drain Current (ID) | - | - | - | 20 | A |
| Power Dissipation (PD) | - | - | - | 1.6 | W |
| On-State Resistance (RDS(on)) @ VGS = 4.5 V | - | - | 0.024 | - | Ω |
| On-State Resistance (RDS(on)) @ VGS = 2.5 V | - | - | 0.032 | - | Ω |
| Thermal Resistance, Junction-to-Ambient (RθJA) | - | - | - | 78 | °C/W |
| Thermal Resistance, Junction-to-Case (RθJC) | - | - | - | 30 | °C/W |
| Gate Charge (Qg) | VDS = 5 V, ID = 6.2 A, VGS = 4.5 V | - | 10.5 | 16 | nC |
Key Features
- High performance trench technology for extremely low RDS(on) (0.024 Ω @ VGS = 4.5 V and 0.032 Ω @ VGS = 2.5 V)
- Fast switching speed
- Low gate charge (10.5 nC typical)
- SuperSOT-6 package: small footprint (72% smaller than standard SO-8), low profile (1mm thick)
Applications
- DC/DC converters
- Load switches
- Battery protection circuits
Q & A
- What is the maximum drain-source voltage of the FDC637AN MOSFET?
The maximum drain-source voltage (VDSS) is 20 V.
- What is the continuous drain current rating of the FDC637AN?
The continuous drain current (ID) is rated at 6.2 A.
- What is the on-state resistance of the FDC637AN at VGS = 4.5 V?
The on-state resistance (RDS(on)) at VGS = 4.5 V is 0.024 Ω.
- What is the typical gate charge of the FDC637AN?
The typical gate charge (Qg) is 10.5 nC.
- What package type is used for the FDC637AN?
The FDC637AN is packaged in a SuperSOT-6 package.
- What are the thermal resistance values for the FDC637AN?
The thermal resistance from junction to ambient (RθJA) is 78 °C/W, and from junction to case (RθJC) is 30 °C/W.
- What are the typical applications for the FDC637AN MOSFET?
Typical applications include DC/DC converters, load switches, and battery protection circuits.
- What is the operating junction temperature range for the FDC637AN?
The operating and storage junction temperature range is -55 to +150 °C.
- How does the PowerTrench technology benefit the FDC637AN?
The PowerTrench technology minimizes on-state resistance while maintaining low gate charge, enhancing switching performance.
- What is the power dissipation rating for the FDC637AN?
The power dissipation (PD) for single operation is 1.6 W.
