Overview
The FDC5614P is a 60 V P-Channel Logic Level MOSFET produced by onsemi, utilizing their high voltage PowerTrench process. This device is optimized for power management applications and is known for its high performance and low on-resistance. The FDC5614P is packaged in a TSOT-23-6 (SuperSOT-6) package, making it suitable for surface mount applications. It is designed to offer fast switching speeds and is Pb-free and halide-free, aligning with modern environmental standards.
Key Specifications
| Parameter | Value | Unit |
|---|---|---|
| Drain-Source Voltage (VDSS) | -60 | V |
| Gate-Source Voltage (VGSS) | ±20 | V |
| Drain Current (ID) - Continuous | -3 | A |
| Drain Current (ID) - Pulsed | -20 | A |
| Maximum Power Dissipation (PD) | 1.6 | W |
| On-Resistance (RDS(on)) @ VGS = -10 V | 0.105 | Ω |
| On-Resistance (RDS(on)) @ VGS = -4.5 V | 0.135 | Ω |
| Thermal Resistance, Junction-to-Ambient (RθJA) | 78 | °C/W |
| Thermal Resistance, Junction-to-Case (RθJC) | 30 | °C/W |
| Operating and Storage Junction Temperature Range | -55 to 150 | °C |
| Gate Charge (Qg) | 15 | nC |
Key Features
- High voltage PowerTrench process for high performance and low on-resistance.
- Fast switching speed, making it suitable for high-frequency applications.
- Low on-resistance (RDS(on)) of 0.105 Ω @ VGS = -10 V and 0.135 Ω @ VGS = -4.5 V.
- Pb-free and halide-free, complying with environmental regulations.
- Surface mount package (TSOT-23-6) for easy integration into modern designs.
Applications
- DC-DC converters: Ideal for power conversion in various electronic devices.
- Load switch: Used in applications requiring high current switching.
- Power management: Suitable for managing power in systems such as video game consoles, flat panel TVs, DVRs, and set-top boxes.
- External AC-DC merchant power supplies: Used in wireless communications and other external power supply applications.
- Wireless LAN access and other wireless communication devices.
- Military and civil aerospace applications due to its robust performance and reliability.
Q & A
- What is the maximum drain-source voltage (VDSS) of the FDC5614P MOSFET?
The maximum drain-source voltage (VDSS) is -60 V.
- What is the on-resistance (RDS(on)) of the FDC5614P at VGS = -10 V?
The on-resistance (RDS(on)) at VGS = -10 V is 0.105 Ω.
- What is the maximum continuous drain current (ID) of the FDC5614P?
The maximum continuous drain current (ID) is -3 A.
- What is the thermal resistance, junction-to-ambient (RθJA), of the FDC5614P?
The thermal resistance, junction-to-ambient (RθJA), is 78 °C/W.
- What package type is the FDC5614P available in?
The FDC5614P is available in a TSOT-23-6 (SuperSOT-6) package.
- Is the FDC5614P Pb-free and halide-free?
Yes, the FDC5614P is Pb-free and halide-free.
- What are some common applications of the FDC5614P MOSFET?
Common applications include DC-DC converters, load switches, power management in various electronic devices, and external AC-DC merchant power supplies.
- What is the gate charge (Qg) of the FDC5614P?
The gate charge (Qg) is 15 nC.
- What is the operating and storage junction temperature range of the FDC5614P?
The operating and storage junction temperature range is -55 to 150 °C.
- Is the FDC5614P suitable for high-frequency applications?
Yes, the FDC5614P is suitable for high-frequency applications due to its fast switching speed.
