FDB9503L-F085
  • Share:

onsemi FDB9503L-F085

Manufacturer No:
FDB9503L-F085
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
MOSFET P-CH 40V 110A D2PAK
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The FDB9503L-F085 is a power MOSFET from onsemi, designed for high-performance applications. While specific details for this model are limited, it is part of onsemi's lineup of power MOSFETs known for their reliability, efficiency, and robust thermal management.

Key Specifications

ParameterValueUnit
Drain-to-Source Voltage (VDSS)-40V
Gate-to-Source Voltage (VGS)±16V
Drain Current (ID) - Continuous-100A
Power Dissipation (PD)227W
Operating and Storage Temperature (TJ, TSTG)-55 to +175°C
Thermal Resistance, Junction to Case (RθJC)0.66°C/W
Thermal Resistance, Junction to Ambient (RθJA)52°C/W

Key Features

  • Low On-Resistance (RDS(on)) for efficient power handling
  • High Drain Current capability
  • Qualified to AEC Q101 standards for automotive reliability
  • Pb-Free, Halogen Free/BFR Free, and RoHS Compliant
  • UIS Capability for robust operation under inductive switching conditions

Applications

  • Automotive Engine Control
  • PowerTrain Management
  • Solenoid and Motor Drivers
  • Electrical Power Steering
  • Integrated Starter/Alternator
  • Distributed Power Architectures and VRM
  • Primary Switch for 12 V Systems

Q & A

  1. What is the maximum drain-to-source voltage of the FDB9503L-F085?
    The maximum drain-to-source voltage is typically around -40 V.
  2. What is the continuous drain current rating?
    The continuous drain current rating is typically around -100 A.
  3. Is the FDB9503L-F085 qualified for automotive applications?
    Yes, it is qualified to AEC Q101 standards.
  4. What is the thermal resistance from junction to case?
    The thermal resistance from junction to case (RθJC) is 0.66 °C/W.
  5. What are the operating and storage temperature ranges?
    The operating and storage temperature ranges are -55 to +175 °C.
  6. Is the FDB9503L-F085 Pb-Free and RoHS Compliant?
    Yes, it is Pb-Free, Halogen Free/BFR Free, and RoHS Compliant.
  7. What are some typical applications of this MOSFET?
    Typical applications include automotive engine control, powertrain management, solenoid and motor drivers, electrical power steering, and more.
  8. What is the UIS capability of this MOSFET?
    The MOSFET has UIS capability for robust operation under inductive switching conditions.
  9. How does the thermal resistance from junction to ambient (RθJA) vary?
    RθJA is determined by the board design and is typically around 52 °C/W.
  10. What is the maximum power dissipation rating?
    The maximum power dissipation rating is 227 W.

Product Attributes

FET Type:P-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):40 V
Current - Continuous Drain (Id) @ 25°C:110A (Tc)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:2.6mOhm @ 80A, 10V
Vgs(th) (Max) @ Id:3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:255 nC @ 10 V
Vgs (Max):±16V
Input Capacitance (Ciss) (Max) @ Vds:8320 pF @ 20 V
FET Feature:- 
Power Dissipation (Max):333W (Tj)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:D²PAK (TO-263)
Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
0 Remaining View Similar

In Stock

$3.42
54

Please send RFQ , we will respond immediately.

Similar Products

Part Number FDB9503L-F085 FDB9403L-F085
Manufacturer onsemi Fairchild Semiconductor
Product Status Active Active
FET Type P-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 40 V 40 V
Current - Continuous Drain (Id) @ 25°C 110A (Tc) 110A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V 10V
Rds On (Max) @ Id, Vgs 2.6mOhm @ 80A, 10V 1.2mOhm @ 80A, 10V
Vgs(th) (Max) @ Id 3V @ 250µA 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 255 nC @ 10 V 245 nC @ 10 V
Vgs (Max) ±16V ±20V
Input Capacitance (Ciss) (Max) @ Vds 8320 pF @ 20 V 13500 pF @ 20 V
FET Feature - -
Power Dissipation (Max) 333W (Tj) 333W (Tj)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package D²PAK (TO-263) D2PAK (TO-263)
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

Related Product By Categories

NTLJF4156NT1G
NTLJF4156NT1G
onsemi
MOSFET N-CH 30V 2.5A 6WDFN
NCV8440ASTT1G
NCV8440ASTT1G
onsemi
MOSFET N-CH 59V 2.6A SOT223
STP3NK90Z
STP3NK90Z
STMicroelectronics
MOSFET N-CH 900V 3A TO220AB
STD5N80K5
STD5N80K5
STMicroelectronics
MOSFET N-CH 800V 4A DPAK
STD5NM60T4
STD5NM60T4
STMicroelectronics
MOSFET N-CH 600V 5A DPAK
NTMFS002P03P8ZT1G
NTMFS002P03P8ZT1G
onsemi
MOSFET, POWER -30V P-CHANNEL, SO
NTMFS4C55NT1G
NTMFS4C55NT1G
onsemi
MOSFET N-CH 30V 78A SO8FL
NDUL03N150CG
NDUL03N150CG
onsemi
MOSFET N-CH 1500V 2.5A TO3P
STP80PF55
STP80PF55
STMicroelectronics
MOSFET P-CH 55V 80A TO220AB
STS12NH3LL
STS12NH3LL
STMicroelectronics
MOSFET N-CH 30V 12A 8SO
PH5030AL,115
PH5030AL,115
Nexperia USA Inc.
MOSFET N-CH 30V 91A LFPAK56
FDMC8010ET30
FDMC8010ET30
onsemi
MOSFET N-CH 30V 30A/174A POWER33

Related Product By Brand

MMBD7000LT1G
MMBD7000LT1G
onsemi
DIODE ARRAY GP 100V 200MA SOT23
MBRAF440T3G
MBRAF440T3G
onsemi
DIODE SCHOTTKY 40V 4A SMA-FL
1SMB5918BT3G
1SMB5918BT3G
onsemi
DIODE ZENER 5.1V 3W SMB
MJD44H11TF
MJD44H11TF
onsemi
TRANS NPN 80V 8A DPAK
TIP145G
TIP145G
onsemi
TRANS PNP DARL 60V 10A TO247-3
FDMS86350ET80
FDMS86350ET80
onsemi
MOSFET N-CH 80V 25A/198A POWER56
ISL9V5036S3ST_SB82026C
ISL9V5036S3ST_SB82026C
onsemi
INTEGRATED CIRCUIT
NB3N502DR2G
NB3N502DR2G
onsemi
IC MULTIPLIER CLOCK PLL 8-SOIC
NCV2904VDR2G
NCV2904VDR2G
onsemi
IC OPAMP GP 2 CIRCUIT 8SOIC
MC14528BDR2G
MC14528BDR2G
onsemi
IC MULTIVIBRATOR 90NS 16SOIC
NLSV2T244DR2G
NLSV2T244DR2G
onsemi
IC TRNSLTR UNIDIRECTIONAL 8SOIC
FAN3224TMX-F085
FAN3224TMX-F085
onsemi
IC GATE DRVR LOW-SIDE 8SOIC