FDB9503L-F085
  • Share:

onsemi FDB9503L-F085

Manufacturer No:
FDB9503L-F085
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
MOSFET P-CH 40V 110A D2PAK
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The FDB9503L-F085 is a power MOSFET from onsemi, designed for high-performance applications. While specific details for this model are limited, it is part of onsemi's lineup of power MOSFETs known for their reliability, efficiency, and robust thermal management.

Key Specifications

ParameterValueUnit
Drain-to-Source Voltage (VDSS)-40V
Gate-to-Source Voltage (VGS)±16V
Drain Current (ID) - Continuous-100A
Power Dissipation (PD)227W
Operating and Storage Temperature (TJ, TSTG)-55 to +175°C
Thermal Resistance, Junction to Case (RθJC)0.66°C/W
Thermal Resistance, Junction to Ambient (RθJA)52°C/W

Key Features

  • Low On-Resistance (RDS(on)) for efficient power handling
  • High Drain Current capability
  • Qualified to AEC Q101 standards for automotive reliability
  • Pb-Free, Halogen Free/BFR Free, and RoHS Compliant
  • UIS Capability for robust operation under inductive switching conditions

Applications

  • Automotive Engine Control
  • PowerTrain Management
  • Solenoid and Motor Drivers
  • Electrical Power Steering
  • Integrated Starter/Alternator
  • Distributed Power Architectures and VRM
  • Primary Switch for 12 V Systems

Q & A

  1. What is the maximum drain-to-source voltage of the FDB9503L-F085?
    The maximum drain-to-source voltage is typically around -40 V.
  2. What is the continuous drain current rating?
    The continuous drain current rating is typically around -100 A.
  3. Is the FDB9503L-F085 qualified for automotive applications?
    Yes, it is qualified to AEC Q101 standards.
  4. What is the thermal resistance from junction to case?
    The thermal resistance from junction to case (RθJC) is 0.66 °C/W.
  5. What are the operating and storage temperature ranges?
    The operating and storage temperature ranges are -55 to +175 °C.
  6. Is the FDB9503L-F085 Pb-Free and RoHS Compliant?
    Yes, it is Pb-Free, Halogen Free/BFR Free, and RoHS Compliant.
  7. What are some typical applications of this MOSFET?
    Typical applications include automotive engine control, powertrain management, solenoid and motor drivers, electrical power steering, and more.
  8. What is the UIS capability of this MOSFET?
    The MOSFET has UIS capability for robust operation under inductive switching conditions.
  9. How does the thermal resistance from junction to ambient (RθJA) vary?
    RθJA is determined by the board design and is typically around 52 °C/W.
  10. What is the maximum power dissipation rating?
    The maximum power dissipation rating is 227 W.

Product Attributes

FET Type:P-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):40 V
Current - Continuous Drain (Id) @ 25°C:110A (Tc)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:2.6mOhm @ 80A, 10V
Vgs(th) (Max) @ Id:3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:255 nC @ 10 V
Vgs (Max):±16V
Input Capacitance (Ciss) (Max) @ Vds:8320 pF @ 20 V
FET Feature:- 
Power Dissipation (Max):333W (Tj)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:D²PAK (TO-263)
Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
0 Remaining View Similar

In Stock

$3.42
54

Please send RFQ , we will respond immediately.

Similar Products

Part Number FDB9503L-F085 FDB9403L-F085
Manufacturer onsemi Fairchild Semiconductor
Product Status Active Active
FET Type P-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 40 V 40 V
Current - Continuous Drain (Id) @ 25°C 110A (Tc) 110A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V 10V
Rds On (Max) @ Id, Vgs 2.6mOhm @ 80A, 10V 1.2mOhm @ 80A, 10V
Vgs(th) (Max) @ Id 3V @ 250µA 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 255 nC @ 10 V 245 nC @ 10 V
Vgs (Max) ±16V ±20V
Input Capacitance (Ciss) (Max) @ Vds 8320 pF @ 20 V 13500 pF @ 20 V
FET Feature - -
Power Dissipation (Max) 333W (Tj) 333W (Tj)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package D²PAK (TO-263) D2PAK (TO-263)
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

Related Product By Categories

STD26P3LLH6
STD26P3LLH6
STMicroelectronics
MOSFET P-CH 30V 12A DPAK
FDMS86255ET150
FDMS86255ET150
onsemi
MOSFET N-CH 150V 10A/63A POWER56
2N7002W
2N7002W
Diotec Semiconductor
MOSFET, SOT-323, 60V, 0.115A, N,
STW58N65DM2AG
STW58N65DM2AG
STMicroelectronics
MOSFET N-CH 650V 48A TO247
CSD18534Q5AT
CSD18534Q5AT
Texas Instruments
MOSFET N-CHANNEL 60V 50A 8VSON
STN1NK80Z
STN1NK80Z
STMicroelectronics
MOSFET N-CH 800V 250MA SOT223
IRF740PBF-BE3
IRF740PBF-BE3
Vishay Siliconix
MOSFET N-CH 400V 10A TO220AB
STB75NF20
STB75NF20
STMicroelectronics
MOSFET N-CH 200V 75A D2PAK
FDT1600N10ALZ
FDT1600N10ALZ
onsemi
MOSFET N-CH 100V 5.6A SOT223-4
NVHL025N65S3
NVHL025N65S3
onsemi
MOSFET N-CH 650V 75A TO247-3
BSH112,235
BSH112,235
NXP USA Inc.
MOSFET N-CH 60V 300MA TO236AB
NTNS3A65PZT5G
NTNS3A65PZT5G
onsemi
MOSFET P-CH 20V 281MA SOT883

Related Product By Brand

MMBT6429LT1G
MMBT6429LT1G
onsemi
TRANS NPN 45V 0.2A SOT23-3
EMI4183MTTAG
EMI4183MTTAG
onsemi
CMC 100MA 6LN SMD ESD
NCD9830DBR2G
NCD9830DBR2G
onsemi
IC ADC 8BIT SAR 16TSSOP
PCA9654EDTR2G
PCA9654EDTR2G
onsemi
IC I/O EXPANDER 8BIT I2C 16TSSOP
MC74VHC1G32DTT1G
MC74VHC1G32DTT1G
onsemi
IC GATE OR 1CH 2-INP 5TSOP
MC74VHC1GT08EDFT2G
MC74VHC1GT08EDFT2G
onsemi
IC GATE AND 1CH 2-INP SC88A
74HC04DR2G
74HC04DR2G
onsemi
IC INVERTER 6CH 1-INP 14SOIC
NCP1377DR2G
NCP1377DR2G
onsemi
IC OFFLINE SWITCH FLYBACK 8SOIC
ADP3110AKRZ
ADP3110AKRZ
onsemi
IC GATE DRVR HALF-BRIDGE 8SOIC
CAT4008W-T2
CAT4008W-T2
onsemi
IC LED DRIVER LINEAR 80MA 16SOIC
MC7812BTG
MC7812BTG
onsemi
IC REG LINEAR 12V 1A TO220AB
LM317MBDT
LM317MBDT
onsemi
IC REG LINEAR POS ADJ 500MA DPAK