Overview
The FCPF190N65FL1 is an N-Channel SuperFET® II FRFET® MOSFET produced by onsemi. This high-voltage super-junction (SJ) MOSFET is designed using charge balance technology to achieve outstanding low on-resistance and lower gate charge performance. It is optimized for high-efficiency switching applications, providing superior conduction and switching characteristics.
Key Specifications
| Parameter | Unit | Min. | Typ. | Max. |
|---|---|---|---|---|
| Drain to Source Voltage (VDSS) | V | 650 | - | - |
| Gate to Source Voltage (VGSS) - DC | V | - | ±20 | ±20 |
| Gate to Source Voltage (VGSS) - AC (f > 1 Hz) | V | - | ±30 | ±30 |
| Continuous Drain Current (ID) at TC = 25°C | A | - | 20.6 | - |
| Continuous Drain Current (ID) at TC = 100°C | A | - | 13.1 | - |
| Pulsed Drain Current (IDM) | A | - | 61.8 | - |
| Single Pulsed Avalanche Energy (EAS) | mJ | - | 400 | - |
| Avalanche Current (IAR) | A | - | 4 | - |
| Repetitive Avalanche Energy (EAR) | mJ | - | 0.39 | - |
| Power Dissipation (PD) at TC = 25°C | W | - | 39 | - |
| Derate Above 25°C | W/°C | - | 0.31 | - |
| Thermal Resistance, Junction to Case (RθJC) | °C/W | - | 3.2 | - |
| Thermal Resistance, Junction to Ambient (RθJA) | °C/W | - | 62.5 | - |
| Static Drain to Source On Resistance (RDS(on)) | mΩ | - | 168 | 190 |
| Total Gate Charge (Qg(tot)) at VGS = 10V | nC | - | 60 | 78 |
Key Features
- Ultra low on-resistance (RDS(on) = 168 mΩ typical)
- Low effective output capacitance (Coss(eff.) = 304 pF typical)
- Ultra low gate charge (Qg(tot) = 60 nC typical)
- 100% avalanche tested
- RoHS compliant
- Optimized body diode reverse recovery performance to remove additional components and improve system reliability
Applications
- Switching power supplies such as PFC, server/telecom power, FPD TV power, ATX power
- Industrial power applications
- LCD / LED / PDP TV power supplies
- Telecom / Server Power Supplies
- Solar Inverter
- AC - DC Power Supply
Q & A
- What is the maximum drain to source voltage (VDSS) of the FCPF190N65FL1?
The maximum drain to source voltage (VDSS) is 650 V.
- What is the continuous drain current (ID) at TC = 25°C?
The continuous drain current (ID) at TC = 25°C is 20.6 A.
- What is the thermal resistance, junction to case (RθJC)?
The thermal resistance, junction to case (RθJC), is 3.2 °C/W.
- What are the key features of the FCPF190N65FL1?
The key features include ultra low on-resistance, low effective output capacitance, ultra low gate charge, 100% avalanche tested, and RoHS compliance.
- What are the typical applications of the FCPF190N65FL1?
The typical applications include switching power supplies, industrial power applications, LCD / LED / PDP TV power supplies, telecom/server power supplies, solar inverters, and AC - DC power supplies.
- Is the FCPF190N65FL1 RoHS compliant?
- What is the maximum gate to source voltage (VGSS) - DC?
The maximum gate to source voltage (VGSS) - DC is ±20 V.
- What is the single pulsed avalanche energy (EAS)?
The single pulsed avalanche energy (EAS) is 400 mJ.
- What is the power dissipation (PD) at TC = 25°C?
The power dissipation (PD) at TC = 25°C is 39 W.
- What is the derate above 25°C?
The derate above 25°C is 0.31 W/°C.
