FCH041N60F-F085
  • Share:

onsemi FCH041N60F-F085

Manufacturer No:
FCH041N60F-F085
Manufacturer:
onsemi
Package:
Bulk
Description:
MOSFET N-CH 600V 76A TO247-3
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The FCH041N60F-F085 is a high-voltage N-Channel Power MOSFET from onsemi, part of their SuperFET II family. This MOSFET utilizes charge balance technology, which offers outstanding low on-resistance and lower gate charge performance. This technology is designed to minimize conduction loss, provide superior switching performance, and higher avalanche energy, making it well-suited for various high-voltage applications such as soft switching and hard switching topologies.

Key Specifications

ParameterValue
Channel PolarityN-Channel
Drain-Source Voltage (VDS)600 V
Drain Current (ID)47 A
On-Resistance (RDS(on)) at VGS = 10 V36 mΩ
Gate-Source Voltage (VGS)±20 V
Threshold Voltage (VGS(th))5 V
Total Gate Charge (Qg) at VGS = 10 V267 nC
Effective Output Capacitance (Coss(eff.))720 nF
Avalanche Energy100% Avalanche Tested
Package TypeTO-247-3
QualificationQualified to AEC Q101
RoHS ComplianceRoHS Compliant

Key Features

  • Utilizes charge balance technology for low on-resistance and lower gate charge.
  • Optimized body diode reverse recovery performance to remove additional components and improve system reliability.
  • Low Effective Output Capacitance (Coss(eff.) = 720 nF).
  • 100% Avalanche Tested.
  • Qualified to AEC Q101 and RoHS Compliant.

Applications

  • Automotive On Board Charger.
  • Automotive DC/DC converter for Hybrid Electric Vehicles (HEV).
  • High Voltage Full Bridge and Half Bridge DC-DC converters.
  • Interleaved Boost PFC and Boost PFC for HEV-EV automotive.

Q & A

  1. What is the drain-source voltage rating of the FCH041N60F-F085 MOSFET?
    The drain-source voltage rating is 600 V.
  2. What is the maximum drain current for this MOSFET?
    The maximum drain current is 47 A.
  3. What is the on-resistance of the FCH041N60F-F085 at VGS = 10 V?
    The on-resistance is 36 mΩ at VGS = 10 V.
  4. Is the FCH041N60F-F085 qualified to any automotive standards?
    Yes, it is qualified to AEC Q101.
  5. What is the package type of the FCH041N60F-F085?
    The package type is TO-247-3.
  6. Is the FCH041N60F-F085 RoHS compliant?
    Yes, it is RoHS compliant.
  7. What are some typical applications for the FCH041N60F-F085?
    Typical applications include automotive on-board chargers, automotive DC/DC converters for HEV, and high-voltage DC-DC converters.
  8. What is the total gate charge at VGS = 10 V for this MOSFET?
    The total gate charge is 267 nC at VGS = 10 V.
  9. Does the FCH041N60F-F085 have any special features related to its body diode?
    Yes, it has optimized body diode reverse recovery performance to improve system reliability.
  10. What is the effective output capacitance of the FCH041N60F-F085?
    The effective output capacitance is 720 nF.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):600 V
Current - Continuous Drain (Id) @ 25°C:76A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:41mOhm @ 38A, 10V
Vgs(th) (Max) @ Id:5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:347 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:10900 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):595W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-247-3
Package / Case:TO-247-3
0 Remaining View Similar

In Stock

$14.77
10

Please send RFQ , we will respond immediately.

Similar Products

Part Number FCH041N60F-F085 FCH041N65F-F085
Manufacturer onsemi Fairchild Semiconductor
Product Status Not For New Designs Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600 V 650 V
Current - Continuous Drain (Id) @ 25°C 76A (Tc) 76A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V
Rds On (Max) @ Id, Vgs 41mOhm @ 38A, 10V 41mOhm @ 38A, 10V
Vgs(th) (Max) @ Id 5V @ 250µA 5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 347 nC @ 10 V 304 nC @ 10 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 10900 pF @ 25 V 13566 pF @ 25 V
FET Feature - -
Power Dissipation (Max) 595W (Tc) 595W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole
Supplier Device Package TO-247-3 TO-247
Package / Case TO-247-3 TO-247-3

Related Product By Categories

NCV8440ASTT1G
NCV8440ASTT1G
onsemi
MOSFET N-CH 59V 2.6A SOT223
NVR5124PLT1G
NVR5124PLT1G
onsemi
MOSFET P-CH 60V 1.1A SOT23-3
IRLML0040TRPBF
IRLML0040TRPBF
Infineon Technologies
MOSFET N-CH 40V 3.6A SOT23
AO4407A
AO4407A
Alpha & Omega Semiconductor Inc.
MOSFET P-CH 30V 12A 8SOIC
IRFP4468PBF
IRFP4468PBF
Infineon Technologies
MOSFET N-CH 100V 195A TO247AC
NTS4173PT1G
NTS4173PT1G
onsemi
MOSFET P-CH 30V 1.2A SC70-3
FDMS86520L
FDMS86520L
onsemi
MOSFET N CH 60V 13.5A 8PQFN
STD5N80K5
STD5N80K5
STMicroelectronics
MOSFET N-CH 800V 4A DPAK
STF28N65M2
STF28N65M2
STMicroelectronics
MOSFET N-CH 650V 20A TO220FP
STW48NM60N
STW48NM60N
STMicroelectronics
MOSFET N-CH 600V 44A TO247
NVD5490NLT4G
NVD5490NLT4G
onsemi
MOSFET N-CH 60V 5A/17A DPAK-3
BSS138W-7-F-79
BSS138W-7-F-79
Diodes Incorporated
DIODE

Related Product By Brand

2SC3646S-TD-E
2SC3646S-TD-E
onsemi
TRANS NPN 100V 1A PCP
NTUD3127CT5G
NTUD3127CT5G
onsemi
MOSFET N/P-CH 20V SOT-963
NTB6413ANG
NTB6413ANG
onsemi
MOSFET N-CH 100V 42A D2PAK
BSS138LT7G
BSS138LT7G
onsemi
MOSFET N-CH 50V 200MA SOT23-3
NCV2820MUTBG
NCV2820MUTBG
onsemi
IC AMP CLASS D MONO 8UDFN
NCP1252ADR2G
NCP1252ADR2G
onsemi
IC OFFLINE SWITCH MULT TOP 8SOIC
NCP1623ASNT1G
NCP1623ASNT1G
onsemi
ENHANCED HIGH EFFICIENCY POWER F
NCV7707DQCR2G
NCV7707DQCR2G
onsemi
IC DOOR MODULE DRIVER 36SSOP
NCP715SQ33T2G
NCP715SQ33T2G
onsemi
IC REG LINEAR 3.3V 50MA SC88A
LM2903DR2GH
LM2903DR2GH
onsemi
FIXED POSITIVE LDO REGULATOR
NCP163AFCT280T2G
NCP163AFCT280T2G
onsemi
IC REG LINEAR 2.8V 250MA 4WLCSP
NCV57080BDR2G
NCV57080BDR2G
onsemi
ISOLATED HIGH CURRENT GATE DRIVE