BC848BLT3
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onsemi BC848BLT3

Manufacturer No:
BC848BLT3
Manufacturer:
onsemi
Package:
Bulk
Description:
TRANSISTOR NPN 30V 100MA SOT-23
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BC848BLT3 is a general-purpose NPN epitaxial silicon transistor manufactured by onsemi. This transistor is part of the BC848 series, known for its high current gain and low noise characteristics, making it suitable for a wide range of electronic applications. The BC848BLT3 is packaged in the SOT-23 (SC-70) case style, which is compact and ideal for space-constrained designs.

Key Specifications

Characteristic Symbol Min Typ Max Unit
Collector-Base Breakdown Voltage V(BR)CBO - - 30 V
Collector-Emitter Breakdown Voltage V(BR)CEO - - 30 V
Emitter-Base Breakdown Voltage V(BR)EBO - - 5.0 V
Collector Current (DC) IC - - 100 mA
Junction Temperature TJ - - 150 °C
Storage Temperature Range TSTG -65 - 150 °C
Power Dissipation PD - - 310 mW
Thermal Resistance, Junction-to-Ambient RθJA - - 403 °C/W
DC Current Gain (hFE) hFE 110 - 800 -
Collector-Emitter Saturation Voltage (VCE(sat)) VCE(sat) - - 0.6 V
Base-Emitter Saturation Voltage (VBE(sat)) VBE(sat) - - 0.9 V

Key Features

  • High Current Gain: The BC848BLT3 offers a high DC current gain (hFE) ranging from 110 to 800, making it suitable for amplifier and switching applications.
  • Low Noise: This transistor has low noise characteristics, which is beneficial for audio and other sensitive signal processing applications.
  • Compact Package: The SOT-23 (SC-70) package is compact and ideal for space-constrained designs, making it suitable for modern electronic devices.
  • Wide Operating Temperature Range: The transistor can operate over a wide temperature range from -65°C to 150°C, ensuring reliability in various environmental conditions.
  • Low Saturation Voltages: The collector-emitter and base-emitter saturation voltages are low, which helps in reducing power consumption and improving efficiency.

Applications

  • Amplifier Circuits: The high current gain and low noise characteristics make the BC848BLT3 suitable for use in amplifier circuits, including audio amplifiers and general-purpose amplifiers.
  • Switching Circuits: Its high current gain and low saturation voltages make it ideal for switching applications, such as in power supplies, motor control, and other digital circuits.
  • Signal Processing: The low noise figure of the BC848BLT3 makes it a good choice for signal processing applications, including audio and video circuits.
  • Automotive and Industrial Electronics: The wide operating temperature range and robust construction make it suitable for use in automotive and industrial electronic systems.

Q & A

  1. What is the package type of the BC848BLT3 transistor?

    The BC848BLT3 is packaged in the SOT-23 (SC-70) case style.

  2. What is the maximum collector current of the BC848BLT3?

    The maximum collector current (IC) is 100 mA.

  3. What is the junction temperature range of the BC848BLT3?

    The junction temperature (TJ) range is from -55°C to 150°C.

  4. What is the typical DC current gain (hFE) of the BC848BLT3?

    The typical DC current gain (hFE) ranges from 110 to 800.

  5. What is the collector-emitter saturation voltage (VCE(sat)) of the BC848BLT3?

    The collector-emitter saturation voltage (VCE(sat)) is typically up to 0.6 V.

  6. What is the base-emitter saturation voltage (VBE(sat)) of the BC848BLT3?

    The base-emitter saturation voltage (VBE(sat)) is typically up to 0.9 V.

  7. What are the typical applications of the BC848BLT3 transistor?

    The BC848BLT3 is typically used in amplifier circuits, switching circuits, signal processing, and in automotive and industrial electronics.

  8. What is the thermal resistance, junction-to-ambient (RθJA) of the BC848BLT3?

    The thermal resistance, junction-to-ambient (RθJA), is approximately 403 °C/W.

  9. What is the power dissipation (PD) of the BC848BLT3?

    The power dissipation (PD) is up to 310 mW.

  10. Is the BC848BLT3 suitable for high-temperature environments?

    Yes, the BC848BLT3 can operate in a wide temperature range, making it suitable for high-temperature environments.

Product Attributes

Transistor Type:- 
Current - Collector (Ic) (Max):- 
Voltage - Collector Emitter Breakdown (Max):- 
Vce Saturation (Max) @ Ib, Ic:- 
Current - Collector Cutoff (Max):- 
DC Current Gain (hFE) (Min) @ Ic, Vce:- 
Power - Max:- 
Frequency - Transition:- 
Operating Temperature:- 
Mounting Type:- 
Package / Case:- 
Supplier Device Package:- 
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Similar Products

Part Number BC848BLT3 BC848BLT3G BC849BLT3 BC848BLT1
Manufacturer onsemi onsemi onsemi onsemi
Product Status Obsolete Active Obsolete Obsolete
Transistor Type - NPN NPN -
Current - Collector (Ic) (Max) - 100 mA 100 mA -
Voltage - Collector Emitter Breakdown (Max) - 30 V 30 V -
Vce Saturation (Max) @ Ib, Ic - 600mV @ 5mA, 100mA 600mV @ 5mA, 100mA -
Current - Collector Cutoff (Max) - 15nA (ICBO) 15nA (ICBO) -
DC Current Gain (hFE) (Min) @ Ic, Vce - 200 @ 2mA, 5V 200 @ 2mA, 5V -
Power - Max - 300 mW 300 mW -
Frequency - Transition - 100MHz 100MHz -
Operating Temperature - -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -
Mounting Type - Surface Mount Surface Mount -
Package / Case - TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3 -
Supplier Device Package - SOT-23-3 (TO-236) SOT-23-3 (TO-236) -

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