BC848BLT3
  • Share:

onsemi BC848BLT3

Manufacturer No:
BC848BLT3
Manufacturer:
onsemi
Package:
Bulk
Description:
TRANSISTOR NPN 30V 100MA SOT-23
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BC848BLT3 is a general-purpose NPN epitaxial silicon transistor manufactured by onsemi. This transistor is part of the BC848 series, known for its high current gain and low noise characteristics, making it suitable for a wide range of electronic applications. The BC848BLT3 is packaged in the SOT-23 (SC-70) case style, which is compact and ideal for space-constrained designs.

Key Specifications

Characteristic Symbol Min Typ Max Unit
Collector-Base Breakdown Voltage V(BR)CBO - - 30 V
Collector-Emitter Breakdown Voltage V(BR)CEO - - 30 V
Emitter-Base Breakdown Voltage V(BR)EBO - - 5.0 V
Collector Current (DC) IC - - 100 mA
Junction Temperature TJ - - 150 °C
Storage Temperature Range TSTG -65 - 150 °C
Power Dissipation PD - - 310 mW
Thermal Resistance, Junction-to-Ambient RθJA - - 403 °C/W
DC Current Gain (hFE) hFE 110 - 800 -
Collector-Emitter Saturation Voltage (VCE(sat)) VCE(sat) - - 0.6 V
Base-Emitter Saturation Voltage (VBE(sat)) VBE(sat) - - 0.9 V

Key Features

  • High Current Gain: The BC848BLT3 offers a high DC current gain (hFE) ranging from 110 to 800, making it suitable for amplifier and switching applications.
  • Low Noise: This transistor has low noise characteristics, which is beneficial for audio and other sensitive signal processing applications.
  • Compact Package: The SOT-23 (SC-70) package is compact and ideal for space-constrained designs, making it suitable for modern electronic devices.
  • Wide Operating Temperature Range: The transistor can operate over a wide temperature range from -65°C to 150°C, ensuring reliability in various environmental conditions.
  • Low Saturation Voltages: The collector-emitter and base-emitter saturation voltages are low, which helps in reducing power consumption and improving efficiency.

Applications

  • Amplifier Circuits: The high current gain and low noise characteristics make the BC848BLT3 suitable for use in amplifier circuits, including audio amplifiers and general-purpose amplifiers.
  • Switching Circuits: Its high current gain and low saturation voltages make it ideal for switching applications, such as in power supplies, motor control, and other digital circuits.
  • Signal Processing: The low noise figure of the BC848BLT3 makes it a good choice for signal processing applications, including audio and video circuits.
  • Automotive and Industrial Electronics: The wide operating temperature range and robust construction make it suitable for use in automotive and industrial electronic systems.

Q & A

  1. What is the package type of the BC848BLT3 transistor?

    The BC848BLT3 is packaged in the SOT-23 (SC-70) case style.

  2. What is the maximum collector current of the BC848BLT3?

    The maximum collector current (IC) is 100 mA.

  3. What is the junction temperature range of the BC848BLT3?

    The junction temperature (TJ) range is from -55°C to 150°C.

  4. What is the typical DC current gain (hFE) of the BC848BLT3?

    The typical DC current gain (hFE) ranges from 110 to 800.

  5. What is the collector-emitter saturation voltage (VCE(sat)) of the BC848BLT3?

    The collector-emitter saturation voltage (VCE(sat)) is typically up to 0.6 V.

  6. What is the base-emitter saturation voltage (VBE(sat)) of the BC848BLT3?

    The base-emitter saturation voltage (VBE(sat)) is typically up to 0.9 V.

  7. What are the typical applications of the BC848BLT3 transistor?

    The BC848BLT3 is typically used in amplifier circuits, switching circuits, signal processing, and in automotive and industrial electronics.

  8. What is the thermal resistance, junction-to-ambient (RθJA) of the BC848BLT3?

    The thermal resistance, junction-to-ambient (RθJA), is approximately 403 °C/W.

  9. What is the power dissipation (PD) of the BC848BLT3?

    The power dissipation (PD) is up to 310 mW.

  10. Is the BC848BLT3 suitable for high-temperature environments?

    Yes, the BC848BLT3 can operate in a wide temperature range, making it suitable for high-temperature environments.

Product Attributes

Transistor Type:- 
Current - Collector (Ic) (Max):- 
Voltage - Collector Emitter Breakdown (Max):- 
Vce Saturation (Max) @ Ib, Ic:- 
Current - Collector Cutoff (Max):- 
DC Current Gain (hFE) (Min) @ Ic, Vce:- 
Power - Max:- 
Frequency - Transition:- 
Operating Temperature:- 
Mounting Type:- 
Package / Case:- 
Supplier Device Package:- 
0 Remaining View Similar

In Stock

$0.02
49,799

Please send RFQ , we will respond immediately.

Same Series
DD15S2S5WV30/AA
DD15S2S5WV30/AA
CONN D-SUB HD RCPT 15P SLDR CUP
RD15S10HV30/AA
RD15S10HV30/AA
CONN D-SUB RCPT 15POS CRIMP
CBC13W3S10HE0/AA
CBC13W3S10HE0/AA
CONN D-SUB RCPT 13POS CRIMP
DD15S20J0S
DD15S20J0S
CONN D-SUB HD RCPT 15P SLDR CUP
DD26S20000
DD26S20000
CONN D-SUB HD RCPT 26P SLDR CUP
DD15S20WV5S/AA
DD15S20WV5S/AA
CONN D-SUB HD RCPT 15P SLDR CUP
DD26S200TX
DD26S200TX
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S2S500X/AA
DD26S2S500X/AA
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S2S500X
DD26S2S500X
CONN D-SUB HD RCPT 26P SLDR CUP
CBC13W3S10HE3S/AA
CBC13W3S10HE3S/AA
CONN D-SUB RCPT 13POS CRIMP
CBC13W3S10HV3S/AA
CBC13W3S10HV3S/AA
CONN D-SUB RCPT 13POS CRIMP
DD44S32S600X/AA
DD44S32S600X/AA
CONN D-SUB HD RCPT 44P VERT SLDR

Similar Products

Part Number BC848BLT3 BC848BLT3G BC849BLT3 BC848BLT1
Manufacturer onsemi onsemi onsemi onsemi
Product Status Obsolete Active Obsolete Obsolete
Transistor Type - NPN NPN -
Current - Collector (Ic) (Max) - 100 mA 100 mA -
Voltage - Collector Emitter Breakdown (Max) - 30 V 30 V -
Vce Saturation (Max) @ Ib, Ic - 600mV @ 5mA, 100mA 600mV @ 5mA, 100mA -
Current - Collector Cutoff (Max) - 15nA (ICBO) 15nA (ICBO) -
DC Current Gain (hFE) (Min) @ Ic, Vce - 200 @ 2mA, 5V 200 @ 2mA, 5V -
Power - Max - 300 mW 300 mW -
Frequency - Transition - 100MHz 100MHz -
Operating Temperature - -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -
Mounting Type - Surface Mount Surface Mount -
Package / Case - TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3 -
Supplier Device Package - SOT-23-3 (TO-236) SOT-23-3 (TO-236) -

Related Product By Categories

MJE5852G
MJE5852G
onsemi
TRANS PNP 400V 8A TO220
MCH6203-TL-E
MCH6203-TL-E
onsemi
TRANS NPN 50V 1A 6MCPH
PMBT2222A/DG,215
PMBT2222A/DG,215
NXP USA Inc.
SMALL SIGNAL BIPOLAR TRANSISTOR
MJD50TF
MJD50TF
onsemi
TRANS NPN 400V 1A DPAK
BC857CQB-QZ
BC857CQB-QZ
Nexperia USA Inc.
SMALL SIGNAL BIPOLAR IN DFN PACK
BC847CWH6778XTSA1
BC847CWH6778XTSA1
Infineon Technologies
TRANS NPN 45V 0.1A SOT323
BCX5316H6327XTSA1
BCX5316H6327XTSA1
Infineon Technologies
TRANS PNP 80V 1A SOT89
BC857BLT1
BC857BLT1
onsemi
TRANS PNP 45V 100MA SOT23
BU508AFTBTU
BU508AFTBTU
onsemi
TRANS NPN 700V 5A TO3PF
BCP5610E6327HTSA1
BCP5610E6327HTSA1
Infineon Technologies
TRANS NPN 80V 1A SOT223-4
TIP30C-S
TIP30C-S
Bourns Inc.
TRANS PNP 100V 1A TO220
BC807-25-QVL
BC807-25-QVL
Nexperia USA Inc.
TRANS PNP 45V 0.5A TO236AB

Related Product By Brand

MR2835SKG
MR2835SKG
onsemi
TVS DIODE 23VWM TOP CAN
1N5333BRLG
1N5333BRLG
onsemi
DIODE ZENER 3.3V 5W AXIAL
1N5366BRL
1N5366BRL
onsemi
DIODE ZENER 39V 5W AXIAL
MMBT4401LT1G
MMBT4401LT1G
onsemi
TRANS NPN 40V 0.6A SOT23-3
MJD44H11G
MJD44H11G
onsemi
TRANS NPN 80V 8A DPAK
BD682T
BD682T
onsemi
TRANS PNP DARL 100V 4A TO126
NTK3043NT1G
NTK3043NT1G
onsemi
MOSFET N-CH 20V 210MA SOT723
NCS36000DRG
NCS36000DRG
onsemi
IC PIR DETECTOR CTLR 14SOIC
MC74ACT541DTR2G
MC74ACT541DTR2G
onsemi
IC BUF NON-INVERT 5.5V 20TSSOP
MC74HC163ADR2G
MC74HC163ADR2G
onsemi
LOG CMOS COUNTER 4BIT SOIC16
STK672-432AN-E
STK672-432AN-E
onsemi
IC MOTOR DRIVER UNIPOLAR 19SIP
FODM217CR2V
FODM217CR2V
onsemi
OPTOCOUPLER PHOTOTRANS MFP4