PSMN3R5-80PS
  • Share:

NXP USA Inc. PSMN3R5-80PS

Manufacturer No:
PSMN3R5-80PS
Manufacturer:
NXP USA Inc.
Package:
Bulk
Description:
NOW NEXPERIA PSMN3R5-80PS - POWE
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The PSMN3R5-80PS is a standard level N-channel MOSFET produced by Nexperia, formerly part of NXP Semiconductors. This MOSFET is designed and qualified for use in a wide range of applications, particularly those requiring high reliability and performance at elevated temperatures. It is packaged in the TO-220 format and is qualified to operate up to 175°C, making it suitable for demanding environments.

Key Specifications

Parameter Value Unit
VDS (Drain-Source Voltage) 80 V
VGS (Gate-Source Voltage) ±20 V
ID (Continuous Drain Current) 30 A
RDS(on) (On-State Drain-Source Resistance) 3.5
Ptot (Total Power Dissipation) 150 W
Tj (Junction Temperature) -55 to 175 °C
Package TO-220

Key Features

  • Standard level N-channel MOSFET
  • High temperature operation up to 175°C
  • Low on-state resistance (RDS(on)) of 3.5 mΩ
  • High continuous drain current (ID) of 30 A
  • TO-220 package for easy mounting and heat dissipation
  • Suitable for a wide range of applications including power switching, motor control, and high-frequency switching

Applications

  • Power switching and power management systems
  • Motor control and drive systems
  • High-frequency switching applications
  • Automotive and industrial power electronics
  • High-reliability and high-temperature environments

Q & A

  1. What is the maximum drain-source voltage (VDS) of the PSMN3R5-80PS MOSFET?

    The maximum drain-source voltage (VDS) is 80 V.

  2. What is the on-state drain-source resistance (RDS(on)) of this MOSFET?

    The on-state drain-source resistance (RDS(on)) is 3.5 mΩ.

  3. What is the continuous drain current (ID) rating of the PSMN3R5-80PS?

    The continuous drain current (ID) rating is 30 A.

  4. What is the maximum junction temperature (Tj) for this MOSFET?

    The maximum junction temperature (Tj) is 175°C.

  5. In what package is the PSMN3R5-80PS MOSFET available?

    The PSMN3R5-80PS MOSFET is available in the TO-220 package.

  6. Is the PSMN3R5-80PS still in production?

    No, the PSMN3R5-80PS is obsolete and no longer manufactured. Available substitutes should be considered.

  7. What are some common applications for the PSMN3R5-80PS MOSFET?

    Common applications include power switching, motor control, high-frequency switching, automotive, and industrial power electronics.

  8. What is the total power dissipation (Ptot) of the PSMN3R5-80PS?

    The total power dissipation (Ptot) is 150 W.

  9. What is the gate-source voltage (VGS) rating for this MOSFET?

    The gate-source voltage (VGS) rating is ±20 V.

  10. Why is the PSMN3R5-80PS suitable for high-temperature environments?

    The PSMN3R5-80PS is suitable for high-temperature environments because it is qualified to operate up to 175°C.

Product Attributes

FET Type:- 
Technology:- 
Drain to Source Voltage (Vdss):- 
Current - Continuous Drain (Id) @ 25°C:- 
Drive Voltage (Max Rds On, Min Rds On):- 
Rds On (Max) @ Id, Vgs:- 
Vgs(th) (Max) @ Id:- 
Gate Charge (Qg) (Max) @ Vgs:- 
Vgs (Max):- 
Input Capacitance (Ciss) (Max) @ Vds:- 
FET Feature:- 
Power Dissipation (Max):- 
Operating Temperature:- 
Mounting Type:- 
Supplier Device Package:- 
Package / Case:- 
0 Remaining View Similar

In Stock

-
262

Please send RFQ , we will respond immediately.

Same Series
DD15S20LV3S/AA
DD15S20LV3S/AA
CONN D-SUB HD RCPT 15P SLDR CUP
CBC47W1S10000
CBC47W1S10000
CONN D-SUB RCPT 47POS CRIMP
DD15S20LVLS/AA
DD15S20LVLS/AA
CONN D-SUB HD RCPT 15P SLDR CUP
CBC13W3S10HV30/AA
CBC13W3S10HV30/AA
CONN D-SUB RCPT 13POS CRIMP
DD44M32S50V50
DD44M32S50V50
CONN D-SUB HD PLUG 44P VERT SLDR
CBC13W3S10HE2S/AA
CBC13W3S10HE2S/AA
CONN D-SUB RCPT 13POS CRIMP
DD26S2S0T20
DD26S2S0T20
CONN D-SUB HD RCPT 26P SLDR CUP
DD44S32000X
DD44S32000X
CONN D-SUB HD RCPT 44P VERT SLDR
DD26S200V50/AA
DD26S200V50/AA
CONN D-SUB HD RCPT 26P SLDR CUP
CBC13W3S10HV3S/AA
CBC13W3S10HV3S/AA
CONN D-SUB RCPT 13POS CRIMP
DD26S20W0X/AA
DD26S20W0X/AA
CONN D-SUB HD RCPT 26P SLDR CUP
DD44S32S50T2X/AA
DD44S32S50T2X/AA
CONN D-SUB HD RCPT 44P VERT SLDR

Related Product By Categories

STP20NM50
STP20NM50
STMicroelectronics
MOSFET N-CH 500V 20A TO220AB
FDB12N50TM
FDB12N50TM
onsemi
MOSFET N-CH 500V 11.5A D2PAK
STB18N65M5
STB18N65M5
STMicroelectronics
MOSFET N-CH 650V 15A D2PAK
CSD18531Q5AT
CSD18531Q5AT
Texas Instruments
MOSFET N-CH 60V 100A 8VSON
CSD19536KTTT
CSD19536KTTT
Texas Instruments
MOSFET N-CH 100V 200A DDPAK
FDMS86520L
FDMS86520L
onsemi
MOSFET N CH 60V 13.5A 8PQFN
FDMC86160ET100
FDMC86160ET100
onsemi
MOSFET N-CH 100V 9A/43A POWER33
STD2NK100Z
STD2NK100Z
STMicroelectronics
MOSFET N-CH 1000V 1.85A DPAK
STB33N60M2
STB33N60M2
STMicroelectronics
MOSFET N-CH 600V 26A D2PAK
FDMS86163P-23507X
FDMS86163P-23507X
onsemi
FET -100V 22.0 MOHM PQFN56
NTTFS4939NTAG
NTTFS4939NTAG
onsemi
MOSFET N-CH 30V 8.9A/52A 8WDFN
STW6N120K3
STW6N120K3
STMicroelectronics
MOSFET N-CH 1200V 6A TO247

Related Product By Brand

BAV99/LF1R
BAV99/LF1R
NXP USA Inc.
DIODE SWITCHING TO-236AB
BC807-40QA,147
BC807-40QA,147
NXP USA Inc.
NOW NEXPERIA BC807-40 - SMALL SI
74LVC1GX04GW/C4125
74LVC1GX04GW/C4125
NXP USA Inc.
74LVC1GX04GW - CLOCK GENERATOR
LPC11U24FBD48/301,
LPC11U24FBD48/301,
NXP USA Inc.
IC MCU 32BIT 32KB FLASH 48LQFP
S9S12G128AMLH
S9S12G128AMLH
NXP USA Inc.
IC MCU 16BIT 128KB FLASH 64LQFP
MIMXRT1052DVL6BR
MIMXRT1052DVL6BR
NXP USA Inc.
I.MX RT1050 CROSSOVER PROCESSOR
P89LPC935FA,129
P89LPC935FA,129
NXP USA Inc.
IC MCU 8BIT 8KB FLASH 28PLCC
MCIMX535DVP1C2R2
MCIMX535DVP1C2R2
NXP USA Inc.
IC MPU 32BIT ARM 529PBGA
74HC245PW/AU118
74HC245PW/AU118
NXP USA Inc.
IC TXRX NON-INVERT 6V 20TSSOP
74LV08D/C4118
74LV08D/C4118
NXP USA Inc.
AND GATE, LV/LV-A/LVX/H SERIES
74HCT4094D-Q100118
74HCT4094D-Q100118
NXP USA Inc.
SERIAL IN PARALLEL OUT
MPXHZ6115AC6T1
MPXHZ6115AC6T1
NXP USA Inc.
SENSOR ABS PRESS 16.7PSI MAX