Overview
The PSMN0R9-25YLC is a logic level enhancement mode N-channel MOSFET produced by NXP USA Inc. This device is packaged in the LFPAK56 (Power-SO8) package and is designed and qualified for use in a wide range of industrial, communications, and domestic equipment. It utilizes NextPower Superjunction technology, which enhances its performance and reliability. The MOSFET is optimized for 4.5V gate drive, making it suitable for various high-efficiency applications.
Key Specifications
| Parameter | Conditions | Min | Typ | Max | Unit |
|---|---|---|---|---|---|
| VDS (drain-source voltage) | 25 °C ≤ Tj ≤ 175 °C | - | - | 25 | V |
| ID (drain current) | Tmb = 25 °C; see Figure 1 | - | - | 100 | A |
| Ptot (total power dissipation) | Tmb = 25 °C; see Figure 2 | - | - | 272 | W |
| Tj (junction temperature) | - | -55 | - | 175 | °C |
| RDSon (drain-source on-state resistance) | VGS = 4.5 V; ID = 25 A; Tj = 25 °C | - | 0.95 | 1.25 | mΩ |
| RDSon (drain-source on-state resistance) | VGS = 10 V; ID = 25 A; Tj = 25 °C | - | 0.75 | 0.99 | mΩ |
| VGS(th) (gate-source threshold voltage) | ID = 1 mA; VDS = VGS; Tj = 25 °C | 1.05 | 1.41 | 1.95 | V |
| QGD (gate-drain charge) | VGS = 4.5 V; ID = 25 A; VDS = 12 V | - | 14 | - | nC |
| QG(tot) (total gate charge) | VGS = 4.5 V; ID = 25 A; VDS = 12 V | - | 51 | - | nC |
Key Features
- High reliability Power SO8 package, qualified to 175°C.
- Optimized for 4.5V gate drive utilizing NextPower Superjunction technology.
- Ultra low QG, QGD, and QOSS for high system efficiencies at low and high loads.
- Ultra low RDSon and low parasitic inductance.
Applications
- DC-to-DC converters.
- Lithium-ion battery protection.
- Load switching.
- Power OR-ing.
- Server power supplies.
- Sync rectifier.
Q & A
- What is the maximum drain-source voltage of the PSMN0R9-25YLC?
The maximum drain-source voltage (VDS) is 25 V. - What is the maximum continuous drain current at 25°C?
The maximum continuous drain current (ID) is 100 A. - What is the maximum junction temperature?
The maximum junction temperature (Tj) is 175°C. - What is the typical on-state resistance at VGS = 4.5 V and ID = 25 A?
The typical on-state resistance (RDSon) is 0.95 mΩ. - What are the key applications of the PSMN0R9-25YLC?
The key applications include DC-to-DC converters, lithium-ion battery protection, load switching, power OR-ing, server power supplies, and sync rectifiers. - What technology is used in the PSMN0R9-25YLC?
The device utilizes NextPower Superjunction technology. - What is the package type of the PSMN0R9-25YLC?
The package type is LFPAK56 (Power-SO8). - What is the gate-source threshold voltage at 25°C?
The gate-source threshold voltage (VGS(th)) is typically 1.41 V. - What is the total gate charge at VGS = 4.5 V and ID = 25 A?
The total gate charge (QG(tot)) is typically 51 nC. - Is the PSMN0R9-25YLC RoHS compliant?
Yes, the PSMN0R9-25YLC is RoHS compliant.
