BUK96180-100A,118
  • Share:

NXP USA Inc. BUK96180-100A,118

Manufacturer No:
BUK96180-100A,118
Manufacturer:
NXP USA Inc.
Package:
Bulk
Description:
MOSFET N-CH 100V 11A D2PAK
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BUK96180-100A,118 is an N-channel TrenchMOS logic level Field-Effect Transistor (FET) produced by Nexperia, a company that was previously part of NXP Semiconductors. This device is designed using TrenchMOS technology and is packaged in a plastic case. It is an automotive-qualified component, ensuring reliability and performance in demanding automotive applications.

Key Specifications

ParameterConditionsMinMaxUnit
VDS (Drain-Source Voltage)--100V
VGS (Gate-Source Voltage)--20V
ID (Continuous Drain Current)TC = 25°C-100A
ID (Continuous Drain Current)TC = 100°C-60A
RDS(on) (Drain-Source On-State Resistance)VGS = 10 V, ID = 50 A-1.18
Ptot (Total Power Dissipation)TC = 25°C-390W

Key Features

  • Logic level N-channel enhancement mode Field-Effect Transistor (FET)
  • TrenchMOS technology for low on-state resistance and high efficiency
  • Automotive qualified for reliability in harsh environments
  • High continuous drain current (100 A at TC = 25°C)
  • Low drain-source on-state resistance (RDS(on) = 1.18 mΩ at VGS = 10 V, ID = 50 A)
  • High total power dissipation (390 W at TC = 25°C)

Applications

  • Automotive systems: power steering, power windows, and other high-current applications
  • Industrial power supplies and motor control
  • High-power switching and power management systems
  • Electric vehicles and hybrid vehicles

Q & A

  1. What is the BUK96180-100A,118 used for?
    The BUK96180-100A,118 is used in high-current applications such as automotive systems, industrial power supplies, and high-power switching.
  2. What technology is used in the BUK96180-100A,118?
    The BUK96180-100A,118 uses TrenchMOS technology.
  3. What is the maximum drain-source voltage of the BUK96180-100A,118?
    The maximum drain-source voltage (VDS) is 100 V.
  4. What is the continuous drain current at 25°C for the BUK96180-100A,118?
    The continuous drain current (ID) at 25°C is 100 A.
  5. What is the drain-source on-state resistance of the BUK96180-100A,118?
    The drain-source on-state resistance (RDS(on)) is 1.18 mΩ at VGS = 10 V, ID = 50 A.
  6. Is the BUK96180-100A,118 automotive qualified?
    Yes, the BUK96180-100A,118 is automotive qualified.
  7. What is the total power dissipation of the BUK96180-100A,118 at 25°C?
    The total power dissipation (Ptot) at 25°C is 390 W.
  8. What are some common applications of the BUK96180-100A,118?
    Common applications include automotive systems, industrial power supplies, high-power switching, and electric vehicles.
  9. What is the maximum gate-source voltage for the BUK96180-100A,118?
    The maximum gate-source voltage (VGS) is 20 V.
  10. How does the continuous drain current change with temperature?
    The continuous drain current decreases with increasing temperature; for example, it is 60 A at TC = 100°C.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):100 V
Current - Continuous Drain (Id) @ 25°C:11A (Ta)
Drive Voltage (Max Rds On, Min Rds On):- 
Rds On (Max) @ Id, Vgs:173mOhm @ 5A, 10V
Vgs(th) (Max) @ Id:2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:- 
Vgs (Max):±15V
Input Capacitance (Ciss) (Max) @ Vds:619 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):54W (Ta)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:D2PAK
Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
0 Remaining View Similar

In Stock

$0.27
471

Please send RFQ , we will respond immediately.

Related Product By Categories

BSS123NH6327XTSA1
BSS123NH6327XTSA1
Infineon Technologies
MOSFET N-CH 100V 190MA SOT23-3
FQD4P25TM-WS
FQD4P25TM-WS
onsemi
MOSFET P-CH 250V 3.1A DPAK
PSMN3R0-60PS,127
PSMN3R0-60PS,127
Nexperia USA Inc.
MOSFET N-CH 60V 100A TO220AB
BSS84PH6327XTSA2
BSS84PH6327XTSA2
Infineon Technologies
MOSFET P-CH 60V 170MA SOT23-3
STD36P4LLF6
STD36P4LLF6
STMicroelectronics
MOSFET P-CH 40V 36A DPAK
STH275N8F7-2AG
STH275N8F7-2AG
STMicroelectronics
MOSFET N-CH 80V 180A H2PAK-2
STB30N65M5
STB30N65M5
STMicroelectronics
MOSFET N-CH 650V 22A D2PAK
BSH112,235
BSH112,235
NXP USA Inc.
MOSFET N-CH 60V 300MA TO236AB
NTD3055-094-1
NTD3055-094-1
onsemi
MOSFET N-CH 60V 12A IPAK
PH5030AL,115
PH5030AL,115
Nexperia USA Inc.
MOSFET N-CH 30V 91A LFPAK56
BUK9222-55A,118
BUK9222-55A,118
Nexperia USA Inc.
MOSFET N-CH 55V 48A DPAK
NTNS3A65PZT5GHW
NTNS3A65PZT5GHW
onsemi
MOSFET P-CH 20V 281MA SOT883

Related Product By Brand

BAS16/DG215
BAS16/DG215
NXP USA Inc.
RECTIFIER DIODE, 0.215A, 100V
LPC1823JET100E
LPC1823JET100E
NXP USA Inc.
IC MCU 32BIT 512KB FLSH 100TFBGA
MK24FN1M0VLL12
MK24FN1M0VLL12
NXP USA Inc.
IC MCU 32BIT 1MB FLASH 100LQFP
MK10DX128VLH7
MK10DX128VLH7
NXP USA Inc.
IC MCU 32BIT 128KB FLASH 64LQFP
SPC5604BF2VLL4
SPC5604BF2VLL4
NXP USA Inc.
IC MCU 32BIT 512KB FLASH 100LQFP
74HCT4053PW-Q100118
74HCT4053PW-Q100118
NXP USA Inc.
SINGLE-ENDED MUX,TSSOP16
NX3L2267GM,132
NX3L2267GM,132
NXP USA Inc.
IC ANALOG SWITCH SPDT 10XQFN
PCA9554PW,118
PCA9554PW,118
NXP USA Inc.
IC I/O EXPANDER I2C 8B 16TSSOP
74AHC244PW-Q100118
74AHC244PW-Q100118
NXP USA Inc.
BUS DRIVER, AHC/VHC/H/U/V SERIES
MMPF0100F1AEPR2
MMPF0100F1AEPR2
NXP USA Inc.
IC REG CONV I.MX6 12OUT 56HVQFN
SA630D/01,118
SA630D/01,118
NXP USA Inc.
IC RF SWITCH SPDT 1GHZ 8SO
PCF7961MTT/D1AC13J
PCF7961MTT/D1AC13J
NXP USA Inc.
IC REMOTE KEYLESS ENTRY 20TSSOP