BUK96180-100A,118
  • Share:

NXP USA Inc. BUK96180-100A,118

Manufacturer No:
BUK96180-100A,118
Manufacturer:
NXP USA Inc.
Package:
Bulk
Description:
MOSFET N-CH 100V 11A D2PAK
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BUK96180-100A,118 is an N-channel TrenchMOS logic level Field-Effect Transistor (FET) produced by Nexperia, a company that was previously part of NXP Semiconductors. This device is designed using TrenchMOS technology and is packaged in a plastic case. It is an automotive-qualified component, ensuring reliability and performance in demanding automotive applications.

Key Specifications

ParameterConditionsMinMaxUnit
VDS (Drain-Source Voltage)--100V
VGS (Gate-Source Voltage)--20V
ID (Continuous Drain Current)TC = 25°C-100A
ID (Continuous Drain Current)TC = 100°C-60A
RDS(on) (Drain-Source On-State Resistance)VGS = 10 V, ID = 50 A-1.18
Ptot (Total Power Dissipation)TC = 25°C-390W

Key Features

  • Logic level N-channel enhancement mode Field-Effect Transistor (FET)
  • TrenchMOS technology for low on-state resistance and high efficiency
  • Automotive qualified for reliability in harsh environments
  • High continuous drain current (100 A at TC = 25°C)
  • Low drain-source on-state resistance (RDS(on) = 1.18 mΩ at VGS = 10 V, ID = 50 A)
  • High total power dissipation (390 W at TC = 25°C)

Applications

  • Automotive systems: power steering, power windows, and other high-current applications
  • Industrial power supplies and motor control
  • High-power switching and power management systems
  • Electric vehicles and hybrid vehicles

Q & A

  1. What is the BUK96180-100A,118 used for?
    The BUK96180-100A,118 is used in high-current applications such as automotive systems, industrial power supplies, and high-power switching.
  2. What technology is used in the BUK96180-100A,118?
    The BUK96180-100A,118 uses TrenchMOS technology.
  3. What is the maximum drain-source voltage of the BUK96180-100A,118?
    The maximum drain-source voltage (VDS) is 100 V.
  4. What is the continuous drain current at 25°C for the BUK96180-100A,118?
    The continuous drain current (ID) at 25°C is 100 A.
  5. What is the drain-source on-state resistance of the BUK96180-100A,118?
    The drain-source on-state resistance (RDS(on)) is 1.18 mΩ at VGS = 10 V, ID = 50 A.
  6. Is the BUK96180-100A,118 automotive qualified?
    Yes, the BUK96180-100A,118 is automotive qualified.
  7. What is the total power dissipation of the BUK96180-100A,118 at 25°C?
    The total power dissipation (Ptot) at 25°C is 390 W.
  8. What are some common applications of the BUK96180-100A,118?
    Common applications include automotive systems, industrial power supplies, high-power switching, and electric vehicles.
  9. What is the maximum gate-source voltage for the BUK96180-100A,118?
    The maximum gate-source voltage (VGS) is 20 V.
  10. How does the continuous drain current change with temperature?
    The continuous drain current decreases with increasing temperature; for example, it is 60 A at TC = 100°C.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):100 V
Current - Continuous Drain (Id) @ 25°C:11A (Ta)
Drive Voltage (Max Rds On, Min Rds On):- 
Rds On (Max) @ Id, Vgs:173mOhm @ 5A, 10V
Vgs(th) (Max) @ Id:2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:- 
Vgs (Max):±15V
Input Capacitance (Ciss) (Max) @ Vds:619 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):54W (Ta)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:D2PAK
Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
0 Remaining View Similar

In Stock

$0.27
471

Please send RFQ , we will respond immediately.

Related Product By Categories

PSMN3R0-60PS,127
PSMN3R0-60PS,127
Nexperia USA Inc.
MOSFET N-CH 60V 100A TO220AB
STL50NH3LL
STL50NH3LL
STMicroelectronics
MOSFET N-CH 30V 27A POWERFLAT
IRFB3607PBF
IRFB3607PBF
Infineon Technologies
MOSFET N-CH 75V 80A TO220AB
STP80NF70
STP80NF70
STMicroelectronics
MOSFET N-CH 68V 98A TO220AB
IRLML0040TRPBF
IRLML0040TRPBF
Infineon Technologies
MOSFET N-CH 40V 3.6A SOT23
FQD4P40TM
FQD4P40TM
onsemi
MOSFET P-CH 400V 2.7A DPAK
CSD17575Q3T
CSD17575Q3T
Texas Instruments
MOSFET N-CH 30V 60A 8VSON
STD4NK60ZT4
STD4NK60ZT4
STMicroelectronics
MOSFET N-CH 600V 4A DPAK
BUK9635-55A,118
BUK9635-55A,118
Nexperia USA Inc.
MOSFET N-CH 55V 34A D2PAK
2N7002AQ-13
2N7002AQ-13
Diodes Incorporated
MOSFET N-CH 60V 180MA SOT23
STW88N65M5-4
STW88N65M5-4
STMicroelectronics
MOSFET N-CH 650V 84A TO247-4L
STD85N3LH5
STD85N3LH5
STMicroelectronics
MOSFET N-CH 30V 80A DPAK

Related Product By Brand

BZX84-C27/LF1VL
BZX84-C27/LF1VL
NXP USA Inc.
DIODE ZENER 27V 250MW TO236AB
BF1202WR,115
BF1202WR,115
NXP USA Inc.
MOSFET 2N-CH 10V 30MA SOT343R
PMR290UNE,115
PMR290UNE,115
NXP USA Inc.
MOSFET N-CH 20V 700MA SC75
ADC1003S030TS/C1'1
ADC1003S030TS/C1'1
NXP USA Inc.
IC ADC 10BIT 28SSOP
LPC2194HBD64/01,15
LPC2194HBD64/01,15
NXP USA Inc.
IC MCU 16/32B 256KB FLASH 64LQFP
S9S12G48ACLF
S9S12G48ACLF
NXP USA Inc.
IC MCU 16BIT 48KB FLASH 48LQFP
S9S12P32J0CFTR
S9S12P32J0CFTR
NXP USA Inc.
IC MCU 16BIT 32KB FLASH 48QFN
MCF52110CAE66
MCF52110CAE66
NXP USA Inc.
IC MCU 32BIT 128KB FLASH 64LQFP
MIMX8QP5AVUFFAB
MIMX8QP5AVUFFAB
NXP USA Inc.
MPU I.MX8 QUAD PLUS
TJA1055T/2Z
TJA1055T/2Z
NXP USA Inc.
IC TRANSCEIVER 1/1 14SO
BZV55-C20135
BZV55-C20135
NXP USA Inc.
NOW NEXPERIA BZV55-C20 - ZENER D
UJA1061TW/5V0/C/T518
UJA1061TW/5V0/C/T518
NXP USA Inc.
FAULT-TOLERANT CAN/LIN FAIL-SAFE