BUK96180-100A,118
  • Share:

NXP USA Inc. BUK96180-100A,118

Manufacturer No:
BUK96180-100A,118
Manufacturer:
NXP USA Inc.
Package:
Bulk
Description:
MOSFET N-CH 100V 11A D2PAK
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BUK96180-100A,118 is an N-channel TrenchMOS logic level Field-Effect Transistor (FET) produced by Nexperia, a company that was previously part of NXP Semiconductors. This device is designed using TrenchMOS technology and is packaged in a plastic case. It is an automotive-qualified component, ensuring reliability and performance in demanding automotive applications.

Key Specifications

ParameterConditionsMinMaxUnit
VDS (Drain-Source Voltage)--100V
VGS (Gate-Source Voltage)--20V
ID (Continuous Drain Current)TC = 25°C-100A
ID (Continuous Drain Current)TC = 100°C-60A
RDS(on) (Drain-Source On-State Resistance)VGS = 10 V, ID = 50 A-1.18
Ptot (Total Power Dissipation)TC = 25°C-390W

Key Features

  • Logic level N-channel enhancement mode Field-Effect Transistor (FET)
  • TrenchMOS technology for low on-state resistance and high efficiency
  • Automotive qualified for reliability in harsh environments
  • High continuous drain current (100 A at TC = 25°C)
  • Low drain-source on-state resistance (RDS(on) = 1.18 mΩ at VGS = 10 V, ID = 50 A)
  • High total power dissipation (390 W at TC = 25°C)

Applications

  • Automotive systems: power steering, power windows, and other high-current applications
  • Industrial power supplies and motor control
  • High-power switching and power management systems
  • Electric vehicles and hybrid vehicles

Q & A

  1. What is the BUK96180-100A,118 used for?
    The BUK96180-100A,118 is used in high-current applications such as automotive systems, industrial power supplies, and high-power switching.
  2. What technology is used in the BUK96180-100A,118?
    The BUK96180-100A,118 uses TrenchMOS technology.
  3. What is the maximum drain-source voltage of the BUK96180-100A,118?
    The maximum drain-source voltage (VDS) is 100 V.
  4. What is the continuous drain current at 25°C for the BUK96180-100A,118?
    The continuous drain current (ID) at 25°C is 100 A.
  5. What is the drain-source on-state resistance of the BUK96180-100A,118?
    The drain-source on-state resistance (RDS(on)) is 1.18 mΩ at VGS = 10 V, ID = 50 A.
  6. Is the BUK96180-100A,118 automotive qualified?
    Yes, the BUK96180-100A,118 is automotive qualified.
  7. What is the total power dissipation of the BUK96180-100A,118 at 25°C?
    The total power dissipation (Ptot) at 25°C is 390 W.
  8. What are some common applications of the BUK96180-100A,118?
    Common applications include automotive systems, industrial power supplies, high-power switching, and electric vehicles.
  9. What is the maximum gate-source voltage for the BUK96180-100A,118?
    The maximum gate-source voltage (VGS) is 20 V.
  10. How does the continuous drain current change with temperature?
    The continuous drain current decreases with increasing temperature; for example, it is 60 A at TC = 100°C.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):100 V
Current - Continuous Drain (Id) @ 25°C:11A (Ta)
Drive Voltage (Max Rds On, Min Rds On):- 
Rds On (Max) @ Id, Vgs:173mOhm @ 5A, 10V
Vgs(th) (Max) @ Id:2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:- 
Vgs (Max):±15V
Input Capacitance (Ciss) (Max) @ Vds:619 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):54W (Ta)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:D2PAK
Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
0 Remaining View Similar

In Stock

$0.27
471

Please send RFQ , we will respond immediately.

Related Product By Categories

IRF4905PBF
IRF4905PBF
Infineon Technologies
MOSFET P-CH 55V 74A TO220AB
2N7002 TR PBFREE
2N7002 TR PBFREE
Central Semiconductor Corp
MOSFET N-CH 60V 115MA SOT23
PSMN1R0-40YLDX
PSMN1R0-40YLDX
Nexperia USA Inc.
MOSFET N-CH 40V 280A LFPAK56
NTR3C21NZT1G
NTR3C21NZT1G
onsemi
MOSFET N-CH 20V 3.6A SOT23-3
STD9N40M2
STD9N40M2
STMicroelectronics
MOSFET N-CH 400V 6A DPAK
PSMN2R0-30YLE,115
PSMN2R0-30YLE,115
Nexperia USA Inc.
MOSFET N-CH 30V 100A LFPAK56
STP3NK90Z
STP3NK90Z
STMicroelectronics
MOSFET N-CH 900V 3A TO220AB
BUK9M24-40EX
BUK9M24-40EX
Nexperia USA Inc.
MOSFET N-CH 40V 30A LFPAK33
STF18NM60N
STF18NM60N
STMicroelectronics
MOSFET N-CH 600V 13A TO220FP
BUK9635-55A,118
BUK9635-55A,118
Nexperia USA Inc.
MOSFET N-CH 55V 34A D2PAK
STW21N90K5
STW21N90K5
STMicroelectronics
MOSFET N-CH 900V 18.5A TO247-3
NTNS3A65PZT5G
NTNS3A65PZT5G
onsemi
MOSFET P-CH 20V 281MA SOT883

Related Product By Brand

PMEG4030ER115
PMEG4030ER115
NXP USA Inc.
NOW NEXPERIA PMEG4030ER RECTIFIE
TDA8763AM/3/C4,112
TDA8763AM/3/C4,112
NXP USA Inc.
IC ADC 10BIT SIGMA-DELTA 28SSOP
S9S12G48AMLF
S9S12G48AMLF
NXP USA Inc.
IC MCU 16BIT 48KB FLASH 48LQFP
MCIMX6U6AVM08ADR
MCIMX6U6AVM08ADR
NXP USA Inc.
I.MX6 ROM PERF ENHAN
74HCT4851PW/S400118
74HCT4851PW/S400118
NXP USA Inc.
SINGLE-ENDED MUX, 8 CHANNEL
TJA1028T/5V0/20,11
TJA1028T/5V0/20,11
NXP USA Inc.
IC TRANSCEIVER HALF 1/1 8SO
UJA1075ATW/3V3WD,1
UJA1075ATW/3V3WD,1
NXP USA Inc.
IC INTFACE SPECIALIZED 32HTSSOP
SCC2692AC1N40,602
SCC2692AC1N40,602
NXP USA Inc.
IC UART DUAL 40-DIP
PCF2111CT/1,112
PCF2111CT/1,112
NXP USA Inc.
IC DRVR 64 SEGMENT 40VSOP
MC33664ATL1EGR2
MC33664ATL1EGR2
NXP USA Inc.
TRANSFORMER PHYSICAL LAYER
MC34716EP
MC34716EP
NXP USA Inc.
IC REG CONV DDR 2OUT 26QFN
MPX53GP
MPX53GP
NXP USA Inc.
SENSOR GAUGE PRESSURE 7 PSI MAX