BUK96180-100A,118
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NXP USA Inc. BUK96180-100A,118

Manufacturer No:
BUK96180-100A,118
Manufacturer:
NXP USA Inc.
Package:
Bulk
Description:
MOSFET N-CH 100V 11A D2PAK
Delivery:
Payment:
iso14001
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iso9001
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Product Introduction

Overview

The BUK96180-100A,118 is an N-channel TrenchMOS logic level Field-Effect Transistor (FET) produced by Nexperia, a company that was previously part of NXP Semiconductors. This device is designed using TrenchMOS technology and is packaged in a plastic case. It is an automotive-qualified component, ensuring reliability and performance in demanding automotive applications.

Key Specifications

ParameterConditionsMinMaxUnit
VDS (Drain-Source Voltage)--100V
VGS (Gate-Source Voltage)--20V
ID (Continuous Drain Current)TC = 25°C-100A
ID (Continuous Drain Current)TC = 100°C-60A
RDS(on) (Drain-Source On-State Resistance)VGS = 10 V, ID = 50 A-1.18
Ptot (Total Power Dissipation)TC = 25°C-390W

Key Features

  • Logic level N-channel enhancement mode Field-Effect Transistor (FET)
  • TrenchMOS technology for low on-state resistance and high efficiency
  • Automotive qualified for reliability in harsh environments
  • High continuous drain current (100 A at TC = 25°C)
  • Low drain-source on-state resistance (RDS(on) = 1.18 mΩ at VGS = 10 V, ID = 50 A)
  • High total power dissipation (390 W at TC = 25°C)

Applications

  • Automotive systems: power steering, power windows, and other high-current applications
  • Industrial power supplies and motor control
  • High-power switching and power management systems
  • Electric vehicles and hybrid vehicles

Q & A

  1. What is the BUK96180-100A,118 used for?
    The BUK96180-100A,118 is used in high-current applications such as automotive systems, industrial power supplies, and high-power switching.
  2. What technology is used in the BUK96180-100A,118?
    The BUK96180-100A,118 uses TrenchMOS technology.
  3. What is the maximum drain-source voltage of the BUK96180-100A,118?
    The maximum drain-source voltage (VDS) is 100 V.
  4. What is the continuous drain current at 25°C for the BUK96180-100A,118?
    The continuous drain current (ID) at 25°C is 100 A.
  5. What is the drain-source on-state resistance of the BUK96180-100A,118?
    The drain-source on-state resistance (RDS(on)) is 1.18 mΩ at VGS = 10 V, ID = 50 A.
  6. Is the BUK96180-100A,118 automotive qualified?
    Yes, the BUK96180-100A,118 is automotive qualified.
  7. What is the total power dissipation of the BUK96180-100A,118 at 25°C?
    The total power dissipation (Ptot) at 25°C is 390 W.
  8. What are some common applications of the BUK96180-100A,118?
    Common applications include automotive systems, industrial power supplies, high-power switching, and electric vehicles.
  9. What is the maximum gate-source voltage for the BUK96180-100A,118?
    The maximum gate-source voltage (VGS) is 20 V.
  10. How does the continuous drain current change with temperature?
    The continuous drain current decreases with increasing temperature; for example, it is 60 A at TC = 100°C.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):100 V
Current - Continuous Drain (Id) @ 25°C:11A (Ta)
Drive Voltage (Max Rds On, Min Rds On):- 
Rds On (Max) @ Id, Vgs:173mOhm @ 5A, 10V
Vgs(th) (Max) @ Id:2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:- 
Vgs (Max):±15V
Input Capacitance (Ciss) (Max) @ Vds:619 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):54W (Ta)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:D2PAK
Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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