BUK7Y4R4-40E115
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NXP USA Inc. BUK7Y4R4-40E115

Manufacturer No:
BUK7Y4R4-40E115
Manufacturer:
NXP USA Inc.
Package:
Bulk
Description:
N-CHANNEL POWER MOSFET
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BUK7Y4R4-40E115 is an N-channel power MOSFET produced by NXP USA Inc., now part of Nexperia. This device is designed to meet the high performance requirements of automotive and industrial applications. It is qualified to the AEC Q101 standard, ensuring reliability and durability in demanding environments. The MOSFET features a low on-state resistance and high current handling capabilities, making it suitable for a variety of power management and control systems.

Key Specifications

ParameterValue
Voltage Rating (Vds)40 V
On-State Resistance (Rds(on))4.4 mΩ
Continuous Drain Current (Id)100 A (at Tc)
Power Dissipation (Pd)147 W (at Tc)
Package TypeLFPAK56, Power-SO8
Qualification StandardAEC Q101

Key Features

  • Low on-state resistance of 4.4 mΩ, reducing power losses and improving efficiency.
  • High continuous drain current of 100 A, suitable for high-power applications.
  • Qualified to AEC Q101 standard, ensuring reliability in automotive and industrial environments.
  • Compact LFPAK56 and Power-SO8 packages, offering space-saving solutions.
  • High power dissipation capability of 147 W, enhancing thermal performance.

Applications

The BUK7Y4R4-40E115 is designed for use in high-performance automotive and industrial applications, including but not limited to:

  • Power management systems in vehicles.
  • Industrial power supplies and motor control systems.
  • High-power switching and control circuits.
  • Automotive body and chassis control systems.

Q & A

  1. What is the voltage rating of the BUK7Y4R4-40E115 MOSFET?
    The voltage rating (Vds) of the BUK7Y4R4-40E115 MOSFET is 40 V.
  2. What is the on-state resistance of this MOSFET?
    The on-state resistance (Rds(on)) is 4.4 mΩ.
  3. What is the continuous drain current of this device?
    The continuous drain current (Id) is 100 A at Tc.
  4. What package types are available for this MOSFET?
    The BUK7Y4R4-40E115 is available in LFPAK56 and Power-SO8 packages.
  5. Is this MOSFET qualified for automotive use?
    Yes, it is qualified to the AEC Q101 standard for use in high-performance automotive applications.
  6. What is the power dissipation capability of this MOSFET?
    The power dissipation (Pd) is 147 W at Tc.
  7. Where can I find detailed specifications and datasheets for this component?
    Detailed specifications and datasheets can be found on the official Nexperia website or through distributors like Digi-Key and Mouser.
  8. What are some common applications for this MOSFET?
    This MOSFET is commonly used in power management systems, industrial power supplies, motor control systems, and automotive body and chassis control systems.
  9. How does the low on-state resistance benefit the application?
    The low on-state resistance reduces power losses and improves the overall efficiency of the system.
  10. Is this component suitable for high-power switching applications?
    Yes, it is suitable for high-power switching and control circuits due to its high current handling and power dissipation capabilities.

Product Attributes

FET Type:- 
Technology:- 
Drain to Source Voltage (Vdss):- 
Current - Continuous Drain (Id) @ 25°C:- 
Drive Voltage (Max Rds On, Min Rds On):- 
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FET Feature:- 
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