BSS138BKW-B115
  • Share:

NXP USA Inc. BSS138BKW-B115

Manufacturer No:
BSS138BKW-B115
Manufacturer:
NXP USA Inc.
Package:
Bulk
Description:
SMALL SIGNAL N-CHANNEL MOSFET
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BSS138BKW,115 is a high-performance N-Channel MOSFET produced by Nexperia USA Inc. This device is part of the TrenchMOS family and is known for its low on-resistance and fast switching capabilities. It is packaged in the SOT-323 (SC-70) surface mount package, making it suitable for a wide range of applications where space is limited.

Key Specifications

ParameterValue
FET TypeN-Channel
Number of Channels1
Drain-to-Source Voltage (Vdss)60V
Drain-Source On Resistance (Rds(on))1.6Ω (Max)
Rated Power Dissipation260mW (Ta), 830mW (Tc)
Gate Charge (Qg)0.6nC
Gate-Source Voltage (Vgss)20V
Drain Current (Id)320mA
Turn-on Delay Time5ns
Turn-off Delay Time38ns
Rise Time5ns
Fall Time20ns
Operating Temperature Range-55°C to +150°C
Gate Source Threshold Voltage1.1V
TechnologySilicon
Input Capacitance42pF
Package StyleSOT-323 (SC-70)
Mounting MethodSurface Mount

Key Features

  • Very fast switching times with low rise and fall times.
  • Ultra-low voltage drive capability (2.5V drive).
  • ESD protection up to 2kV (HBM).
  • Pb-free lead plating; RoHS compliant.
  • Halogen-free.

Applications

The BSS138BKW,115 is ideal for various applications including switching circuits, low-side load switches, and relay drivers. Its compact SOT-323 package makes it suitable for space-constrained designs in automotive, industrial, and consumer electronics.

Q & A

  1. What is the drain-to-source voltage rating of the BSS138BKW,115? The drain-to-source voltage rating is 60V.
  2. What is the maximum drain current for the BSS138BKW,115? The maximum drain current is 320mA.
  3. What is the typical on-resistance of the BSS138BKW,115? The typical on-resistance is 1.6Ω.
  4. What is the operating temperature range for the BSS138BKW,115? The operating temperature range is -55°C to +150°C.
  5. Is the BSS138BKW,115 RoHS compliant? Yes, it is RoHS compliant.
  6. What package style does the BSS138BKW,115 use? It uses the SOT-323 (SC-70) package style.
  7. What are the typical turn-on and turn-off delay times for the BSS138BKW,115? The typical turn-on delay time is 5ns, and the typical turn-off delay time is 38ns.
  8. Does the BSS138BKW,115 have ESD protection? Yes, it has ESD protection up to 2kV (HBM).
  9. What is the gate-source threshold voltage for the BSS138BKW,115? The gate-source threshold voltage is 1.1V.
  10. What is the input capacitance of the BSS138BKW,115? The input capacitance is 42pF.

Product Attributes

FET Type:- 
Technology:- 
Drain to Source Voltage (Vdss):- 
Current - Continuous Drain (Id) @ 25°C:- 
Drive Voltage (Max Rds On, Min Rds On):- 
Rds On (Max) @ Id, Vgs:- 
Vgs(th) (Max) @ Id:- 
Gate Charge (Qg) (Max) @ Vgs:- 
Vgs (Max):- 
Input Capacitance (Ciss) (Max) @ Vds:- 
FET Feature:- 
Power Dissipation (Max):- 
Operating Temperature:- 
Mounting Type:- 
Supplier Device Package:- 
Package / Case:- 
0 Remaining View Similar

In Stock

-
175

Please send RFQ , we will respond immediately.

Same Series
DD26S100E2X/AA
DD26S100E2X/AA
CONN D-SUB HD RCPT 26POS CRIMP
CBC13W3S10HE20/AA
CBC13W3S10HE20/AA
CONN D-SUB RCPT 13POS CRIMP
CBC9W4S10H0S/AA
CBC9W4S10H0S/AA
CONN D-SUB RCPT 9POS CRIMP
DD15S20JT2S/AA
DD15S20JT2S/AA
CONN D-SUB HD RCPT 15P SLDR CUP
DD26M20HV50/AA
DD26M20HV50/AA
CONN D-SUB HD PLUG 26P SLDR CUP
DD15S20WE3S/AA
DD15S20WE3S/AA
CONN D-SUB HD RCPT 15P SLDR CUP
DD26S2S0T2X/AA
DD26S2S0T2X/AA
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S200V5X
DD26S200V5X
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S2S50T0
DD26S2S50T0
CONN D-SUB HD RCPT 26P SLDR CUP
DD15S20JVLS
DD15S20JVLS
CONN D-SUB HD RCPT 15P SLDR CUP
DD26S10HE0/AA
DD26S10HE0/AA
CONN D-SUB HD RCPT 26POS CRIMP
DD44S32S0TX
DD44S32S0TX
CONN D-SUB HD RCPT 44P VERT SLDR

Related Product By Categories

IXFH60N65X2-4
IXFH60N65X2-4
IXYS
MOSFET N-CH 650V 60A TO247-4L
CSD17575Q3T
CSD17575Q3T
Texas Instruments
MOSFET N-CH 30V 60A 8VSON
STD3N62K3
STD3N62K3
STMicroelectronics
MOSFET N-CH 620V 2.7A DPAK
BUK9M85-60EX
BUK9M85-60EX
Nexperia USA Inc.
MOSFET N-CH 60V 12.8A LFPAK33
BUK9M24-40EX
BUK9M24-40EX
Nexperia USA Inc.
MOSFET N-CH 40V 30A LFPAK33
STF5N95K5
STF5N95K5
STMicroelectronics
MOSFET N-CH 950V 3.5A TO220FP
STB100N10F7
STB100N10F7
STMicroelectronics
MOSFET N-CH 100V 80A D2PAK
2N7002TC
2N7002TC
Diodes Incorporated
MOSFET N-CH 60V 115MA SOT23-3
BSS84PW
BSS84PW
Infineon Technologies
MOSFET P-CH 60V 150MA SOT323-3
NTMFS4834NT1G
NTMFS4834NT1G
onsemi
MOSFET N-CH 30V 13A/130A 5DFN
STP24N65M2
STP24N65M2
STMicroelectronics
MOSFET N-CH 650V 16A TO220
NTNS3A65PZT5G
NTNS3A65PZT5G
onsemi
MOSFET P-CH 20V 281MA SOT883

Related Product By Brand

BAS56/DG/B2215
BAS56/DG/B2215
NXP USA Inc.
BAS56 - RECTIFIER DIODE
BFG520,235
BFG520,235
NXP USA Inc.
RF TRANS NPN 15V 9GHZ SOT143B
PDTA144EU/ZL115
PDTA144EU/ZL115
NXP USA Inc.
SMALL SIGNAL BIPOLAR TRANSISTOR
MC9S12XEQ512CAA
MC9S12XEQ512CAA
NXP USA Inc.
IC MCU 16BIT 512KB FLASH 80QFP
LPC1823JET100E
LPC1823JET100E
NXP USA Inc.
IC MCU 32BIT 512KB FLSH 100TFBGA
74HC4852D,112
74HC4852D,112
NXP USA Inc.
74HC4852D - DIFFERENTIAL MULTIP
TJA1042T/3,118
TJA1042T/3,118
NXP USA Inc.
IC TRANSCEIVER HALF 1/1 8SO
PCA9534BS3,118
PCA9534BS3,118
NXP USA Inc.
IC I/O EXPANDER I2C 8B 16HVQFN
SC28L198A1A,529
SC28L198A1A,529
NXP USA Inc.
IC UART OCTAL SOT189-3
74HCT4094D-Q100118
74HCT4094D-Q100118
NXP USA Inc.
SERIAL IN PARALLEL OUT
TLVH431CDBZR,215
TLVH431CDBZR,215
NXP USA Inc.
IC VREF SHUNT ADJ 1.5% TO236AB
MPXHZ6115AC6T1
MPXHZ6115AC6T1
NXP USA Inc.
SENSOR ABS PRESS 16.7PSI MAX