BSS138BKW-B115
  • Share:

NXP USA Inc. BSS138BKW-B115

Manufacturer No:
BSS138BKW-B115
Manufacturer:
NXP USA Inc.
Package:
Bulk
Description:
SMALL SIGNAL N-CHANNEL MOSFET
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BSS138BKW,115 is a high-performance N-Channel MOSFET produced by Nexperia USA Inc. This device is part of the TrenchMOS family and is known for its low on-resistance and fast switching capabilities. It is packaged in the SOT-323 (SC-70) surface mount package, making it suitable for a wide range of applications where space is limited.

Key Specifications

ParameterValue
FET TypeN-Channel
Number of Channels1
Drain-to-Source Voltage (Vdss)60V
Drain-Source On Resistance (Rds(on))1.6Ω (Max)
Rated Power Dissipation260mW (Ta), 830mW (Tc)
Gate Charge (Qg)0.6nC
Gate-Source Voltage (Vgss)20V
Drain Current (Id)320mA
Turn-on Delay Time5ns
Turn-off Delay Time38ns
Rise Time5ns
Fall Time20ns
Operating Temperature Range-55°C to +150°C
Gate Source Threshold Voltage1.1V
TechnologySilicon
Input Capacitance42pF
Package StyleSOT-323 (SC-70)
Mounting MethodSurface Mount

Key Features

  • Very fast switching times with low rise and fall times.
  • Ultra-low voltage drive capability (2.5V drive).
  • ESD protection up to 2kV (HBM).
  • Pb-free lead plating; RoHS compliant.
  • Halogen-free.

Applications

The BSS138BKW,115 is ideal for various applications including switching circuits, low-side load switches, and relay drivers. Its compact SOT-323 package makes it suitable for space-constrained designs in automotive, industrial, and consumer electronics.

Q & A

  1. What is the drain-to-source voltage rating of the BSS138BKW,115? The drain-to-source voltage rating is 60V.
  2. What is the maximum drain current for the BSS138BKW,115? The maximum drain current is 320mA.
  3. What is the typical on-resistance of the BSS138BKW,115? The typical on-resistance is 1.6Ω.
  4. What is the operating temperature range for the BSS138BKW,115? The operating temperature range is -55°C to +150°C.
  5. Is the BSS138BKW,115 RoHS compliant? Yes, it is RoHS compliant.
  6. What package style does the BSS138BKW,115 use? It uses the SOT-323 (SC-70) package style.
  7. What are the typical turn-on and turn-off delay times for the BSS138BKW,115? The typical turn-on delay time is 5ns, and the typical turn-off delay time is 38ns.
  8. Does the BSS138BKW,115 have ESD protection? Yes, it has ESD protection up to 2kV (HBM).
  9. What is the gate-source threshold voltage for the BSS138BKW,115? The gate-source threshold voltage is 1.1V.
  10. What is the input capacitance of the BSS138BKW,115? The input capacitance is 42pF.

Product Attributes

FET Type:- 
Technology:- 
Drain to Source Voltage (Vdss):- 
Current - Continuous Drain (Id) @ 25°C:- 
Drive Voltage (Max Rds On, Min Rds On):- 
Rds On (Max) @ Id, Vgs:- 
Vgs(th) (Max) @ Id:- 
Gate Charge (Qg) (Max) @ Vgs:- 
Vgs (Max):- 
Input Capacitance (Ciss) (Max) @ Vds:- 
FET Feature:- 
Power Dissipation (Max):- 
Operating Temperature:- 
Mounting Type:- 
Supplier Device Package:- 
Package / Case:- 
0 Remaining View Similar

In Stock

-
175

Please send RFQ , we will respond immediately.

Same Series
DD15S2S5WV30/AA
DD15S2S5WV30/AA
CONN D-SUB HD RCPT 15P SLDR CUP
DD15S20L0S
DD15S20L0S
CONN D-SUB HD RCPT 15P SLDR CUP
CBC46W4S10G0X/AA
CBC46W4S10G0X/AA
CONN D-SUB RCPT 46POS CRIMP
DD15S20LT2S
DD15S20LT2S
CONN D-SUB HD RCPT 15P SLDR CUP
RD15S10HE0/AA
RD15S10HE0/AA
CONN D-SUB RCPT 15POS CRIMP
CBC13W3S10HT0/AA
CBC13W3S10HT0/AA
CONN D-SUB RCPT 13POS CRIMP
DD15S20JV3S/AA
DD15S20JV3S/AA
CONN D-SUB HD RCPT 15P SLDR CUP
CBC13W3S10HE2S/AA
CBC13W3S10HE2S/AA
CONN D-SUB RCPT 13POS CRIMP
DD26S10HE20/AA
DD26S10HE20/AA
CONN D-SUB HD RCPT 26POS CRIMP
DD26S2S0V5X/AA
DD26S2S0V5X/AA
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S20W00/AA
DD26S20W00/AA
CONN D-SUB HD RCPT 26P SLDR CUP
DD44S32S0T2X/AA
DD44S32S0T2X/AA
CONN D-SUB HD RCPT 44P VERT SLDR

Related Product By Categories

PHD71NQ03LT,118
PHD71NQ03LT,118
NXP USA Inc.
TRANSISTOR >30MHZ
STF4N80K5
STF4N80K5
STMicroelectronics
MOSFET N-CH 800V 3A TO220FP
FDB12N50TM
FDB12N50TM
onsemi
MOSFET N-CH 500V 11.5A D2PAK
BUK98180-100A/CUX
BUK98180-100A/CUX
Nexperia USA Inc.
MOSFET N-CH 100V 4.6A SOT223
NTS4173PT1G
NTS4173PT1G
onsemi
MOSFET P-CH 30V 1.2A SC70-3
IRF3710PBF
IRF3710PBF
Infineon Technologies
MOSFET N-CH 100V 57A TO220AB
STD7ANM60N
STD7ANM60N
STMicroelectronics
MOSFET N-CH 600V 5A DPAK
STV270N4F3
STV270N4F3
STMicroelectronics
MOSFET N-CH 40V 270A 10POWERSO
BSS138K
BSS138K
onsemi
MOSFET N-CH 50V 220MA SOT23-3
FDMC4435BZ-F127-L701
FDMC4435BZ-F127-L701
onsemi
SINGLE ST3 P Z MLP3.3X3.3
NTD20N06LT4
NTD20N06LT4
onsemi
MOSFET N-CH 60V 20A DPAK
FQD13N10LTM_NBEL001
FQD13N10LTM_NBEL001
onsemi
MOSFET N-CH 100V 10A DPAK

Related Product By Brand

PESD5V0L5UV/DG125
PESD5V0L5UV/DG125
NXP USA Inc.
TVS DIODE
Z0103MA0,412
Z0103MA0,412
NXP USA Inc.
NOW WEEN - Z0103MA0 - 4 QUADRANT
BFS17W,135
BFS17W,135
NXP USA Inc.
RF TRANS NPN 15V 1.6GHZ SOT323-3
BC817-25/DG215
BC817-25/DG215
NXP USA Inc.
SMALL SIGNAL BIPOLAR TRANSISTOR
74LVC1GX04GW/C4125
74LVC1GX04GW/C4125
NXP USA Inc.
74LVC1GX04GW - CLOCK GENERATOR
MIMXRT1052DVL6BR
MIMXRT1052DVL6BR
NXP USA Inc.
I.MX RT1050 CROSSOVER PROCESSOR
74HCT4053PW-Q100118
74HCT4053PW-Q100118
NXP USA Inc.
SINGLE-ENDED MUX,TSSOP16
PCA9554PW,118
PCA9554PW,118
NXP USA Inc.
IC I/O EXPANDER I2C 8B 16TSSOP
UJA1169ATK/X/FZ
UJA1169ATK/X/FZ
NXP USA Inc.
IC MINI-CAN SYSTEM BASIS CHIP
74LVC1G126GW/AU125
74LVC1G126GW/AU125
NXP USA Inc.
BUS DRIVER, LVC/LCX/Z SERIES
MWCT1013VLHSTR
MWCT1013VLHSTR
NXP USA Inc.
32BIT256K FLASHSTR CTM
PCF7900VHN/C0L,118
PCF7900VHN/C0L,118
NXP USA Inc.
RF TX IC UHF 315/434MHZ 16VFQFN