BSP225/S911115
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NXP USA Inc. BSP225/S911115

Manufacturer No:
BSP225/S911115
Manufacturer:
NXP USA Inc.
Package:
Bulk
Description:
P-CHANNEL MOSFET
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BSP225/S911115 is a P-channel vertical D-MOS intermediate level FET produced by NXP USA Inc., now part of Nexperia. This MOSFET is designed for use in various electronic devices, offering fast switching capabilities and compatibility with Complementary (C-MOS) transistor and Transistor-Transistor Logic (TTL) devices.

Key Specifications

Parameter Value
Type P-channel MOSFET
Package Variety of packages (specific details in datasheet)
Drain-Source Voltage (Vds) -60 V
Gate-Source Voltage (Vgs) -20 V to +20 V
Continuous Drain Current (Id) Up to 2 A (depending on the package and conditions)
Switching Time Very fast switching
RoHS Status Not applicable (check latest datasheet for updates)

Key Features

The BSP225/S911115 MOSFET features very fast switching times, making it suitable for high-speed applications. It has no secondary breakdown, which enhances its reliability and performance. Additionally, it provides a direct interface to Complementary (C-MOS) transistor and Transistor-Transistor Logic (TTL) devices, making it versatile in various circuit designs.

Applications

The BSP225/S911115 is used in a variety of applications where fast switching and reliable performance are crucial. These include but are not limited to:

  • High-speed digital circuits
  • Power management systems
  • Audio and video equipment
  • Automotive electronics
  • Industrial control systems

Q & A

  1. What is the type of the BSP225/S911115 MOSFET?

    The BSP225/S911115 is a P-channel MOSFET.

  2. What is the maximum drain-source voltage (Vds) for the BSP225/S911115?

    The maximum drain-source voltage (Vds) is -60 V.

  3. What are the gate-source voltage (Vgs) limits for the BSP225/S911115?

    The gate-source voltage (Vgs) limits are -20 V to +20 V.

  4. What is the continuous drain current (Id) for the BSP225/S911115?

    The continuous drain current (Id) can be up to 2 A, depending on the package and operating conditions.

  5. Does the BSP225/S911115 have secondary breakdown?

    No, the BSP225/S911115 does not have secondary breakdown.

  6. What are the typical applications of the BSP225/S911115?

    Typical applications include high-speed digital circuits, power management systems, audio and video equipment, automotive electronics, and industrial control systems.

  7. Is the BSP225/S911115 RoHS compliant?

    Check the latest datasheet for RoHS compliance status, as it may change.

  8. Who is the manufacturer of the BSP225/S911115?

    The BSP225/S911115 is produced by NXP USA Inc., now part of Nexperia.

  9. Where can I find detailed specifications for the BSP225/S911115?

    Detailed specifications can be found in the datasheet available on the manufacturer's website or through authorized distributors.

  10. What are the key features of the BSP225/S911115?

    The key features include very fast switching times, no secondary breakdown, and direct interface to Complementary (C-MOS) transistor and Transistor-Transistor Logic (TTL) devices.

Product Attributes

FET Type:- 
Technology:- 
Drain to Source Voltage (Vdss):- 
Current - Continuous Drain (Id) @ 25°C:- 
Drive Voltage (Max Rds On, Min Rds On):- 
Rds On (Max) @ Id, Vgs:- 
Vgs(th) (Max) @ Id:- 
Gate Charge (Qg) (Max) @ Vgs:- 
Vgs (Max):- 
Input Capacitance (Ciss) (Max) @ Vds:- 
FET Feature:- 
Power Dissipation (Max):- 
Operating Temperature:- 
Mounting Type:- 
Supplier Device Package:- 
Package / Case:- 
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