A2V09H525-04NR6
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NXP USA Inc. A2V09H525-04NR6

Manufacturer No:
A2V09H525-04NR6
Manufacturer:
NXP USA Inc.
Package:
Tape & Reel (TR)
Description:
AIRFAST RF LDMOS WIDEBAND INTEGR
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The A2V09H525-04NR6 is a high-performance RF power LDMOS transistor designed by NXP USA Inc. This component is specifically tailored for cellular base station applications, offering robust performance and reliability. It operates within the frequency range of 720 MHz to 960 MHz, making it suitable for various wireless communication systems.

Key Specifications

ParameterValue
Device TypeN-Channel Enhancement-Mode Lateral MOSFET
Power Output120 W
Operating Frequency720 MHz ~ 960 MHz
Drain-Source Voltage (Vds)48 V
Drain Current (Id)688 mA
Gain18.9 dB
Package TypeOM-1230-4L

Key Features

  • High power output of 120 W, making it suitable for high-power RF applications.
  • Operates within the frequency range of 720 MHz to 960 MHz, covering various cellular bands.
  • Enhancement-mode LDMOS technology for high efficiency and reliability.
  • High gain of 18.9 dB, ensuring strong signal amplification.
  • Robust package (OM-1230-4L) designed for durability and thermal management.

Applications

The A2V09H525-04NR6 is primarily designed for cellular base station applications. It is also suitable for other high-power RF applications such as:

  • Wireless communication systems.
  • RF amplifiers and transmitters.
  • Telecommunication infrastructure.

Q & A

  1. What is the power output of the A2V09H525-04NR6? The power output is 120 W.
  2. What is the operating frequency range of the A2V09H525-04NR6? The operating frequency range is 720 MHz to 960 MHz.
  3. What type of MOSFET is the A2V09H525-04NR6? It is an N-Channel Enhancement-Mode Lateral MOSFET.
  4. What is the drain-source voltage (Vds) of the A2V09H525-04NR6? The drain-source voltage (Vds) is 48 V.
  5. What is the typical drain current (Id) of the A2V09H525-04NR6? The typical drain current (Id) is 688 mA.
  6. What is the gain of the A2V09H525-04NR6? The gain is 18.9 dB.
  7. In what package is the A2V09H525-04NR6 available? It is available in the OM-1230-4L package.
  8. What are the primary applications of the A2V09H525-04NR6? The primary applications are cellular base stations and other high-power RF applications.
  9. Who is the manufacturer of the A2V09H525-04NR6? The manufacturer is NXP USA Inc.
  10. Where can I find detailed specifications for the A2V09H525-04NR6? Detailed specifications can be found on the official NXP website, as well as on distributor websites like Digi-Key, Mouser, and Avnet.

Product Attributes

Transistor Type:LDMOS
Frequency:720MHz ~ 960MHz
Gain:18.9dB
Voltage - Test:48 V
Current Rating (Amps):10µA
Noise Figure:- 
Current - Test:688 mA
Power - Output:120W
Voltage - Rated:105 V
Package / Case:OM-1230-4L
Supplier Device Package:OM-1230-4L
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In Stock

$199.43
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