Overview
The 2N7002PM,315 is a N-channel enhancement mode Field-Effect Transistor (FET) produced by NXP USA Inc. This component is part of NXP's extensive portfolio of discrete semiconductor devices designed to meet various application requirements. The 2N7002PM,315 is known for its high performance, reliability, and versatility, making it suitable for a wide range of electronic systems.
Key Specifications
| Parameter | Value |
|---|---|
| VDS (Drain-Source Voltage) | 60 V |
| VGS (Gate-Source Voltage) | ±20 V |
| ID (Continuous Drain Current) | 115 mA |
| PTOT (Total Power Dissipation) | 360 mW |
| RDS(on) (On-State Drain-Source Resistance) | 5.3 Ω |
| Qg (Total Gate Charge) | 2.5 nC |
Key Features
- Low RDS(on) for reduced power losses.
- High switching speed.
- Low gate charge for efficient switching.
- Enhancement mode operation.
- Small SOT23 package for space-saving designs.
Applications
- General-purpose switching.
- Power management in portable electronics.
- Audio amplifiers and switching circuits.
- Automotive and industrial control systems.
- Low-power DC-DC converters.
Q & A
- What is the maximum drain-source voltage for the 2N7002PM,315?
The maximum drain-source voltage (VDS) is 60 V. - What is the continuous drain current rating for this FET?
The continuous drain current (ID) is 115 mA. - What is the on-state drain-source resistance (RDS(on)) of the 2N7002PM,315?
The on-state drain-source resistance (RDS(on)) is 5.3 Ω. - In what package is the 2N7002PM,315 available?
The component is available in a small SOT23 package. - What are some common applications for the 2N7002PM,315?
Common applications include general-purpose switching, power management in portable electronics, audio amplifiers, and automotive and industrial control systems. - What is the total gate charge (Qg) for this FET?
The total gate charge (Qg) is 2.5 nC. - What is the maximum gate-source voltage (VGS) for the 2N7002PM,315?
The maximum gate-source voltage (VGS) is ±20 V. - What is the total power dissipation (PTOT) for this component?
The total power dissipation (PTOT) is 360 mW. - Is the 2N7002PM,315 suitable for high-frequency switching applications?
Yes, it is suitable due to its low gate charge and high switching speed. - Where can I find detailed specifications and datasheets for the 2N7002PM,315?
Detailed specifications and datasheets can be found on the NXP website or through authorized distributors like Digi-Key, Mouser, and Arrow Electronics.
