Overview
The PSMN2R9-30MLC,115 is a logic level enhancement mode N-channel MOSFET produced by Nexperia USA Inc. This device is packaged in the LFPAK33 (SOT1210) format, which is known for its low parasitic inductance and resistance. The MOSFET is designed and qualified for use in a wide range of industrial, communications, and domestic equipment, leveraging Nexperia's NextPower Superjunction technology. It is optimized for 4.5V gate drive, making it highly efficient for various applications.
Key Specifications
| Parameter | Conditions | Min | Typ | Max | Unit |
|---|---|---|---|---|---|
| VDS (Drain-Source Voltage) | Tj = 25 °C | - | - | 30 | V |
| VGS(th) (Gate-Source Threshold Voltage) | ID = 1 mA; VDS = VGS; Tj = 25 °C | 1.45 | 1.78 | 2.15 | V |
| RDS(on) (Drain-Source On-State Resistance) | @ VGS = 10 V; @ ID = 25 A | - | - | 2.95 mΩ | mΩ |
| ID (Continuous Drain Current) | @ Tc = 25 °C | - | - | 70 A | A |
| Tj (Junction Temperature) | - | -55 °C | - | 175 °C | °C |
| Ptot (Total Power Dissipation) | Tc = 25 °C | - | - | 91 W | W |
| QG (Gate Charge) | @ VGS = 10 V | - | - | 36.1 nC | nC |
| Ciss (Input Capacitance) | @ VDS = 15 V | - | - | 2419 pF | pF |
Key Features
- Low parasitic inductance and resistance due to the LFPAK33 package.
- Optimized for 4.5V gate drive utilizing NextPower Superjunction technology, enhancing efficiency and performance.
- Ultra low QG, QGD, & QOSS for high system efficiencies at both low and high loads.
- Designed for use in a wide range of industrial, communications, and domestic equipment.
Applications
- DC-to-DC converters.
- Load switching.
- Synchronous buck regulators.
Q & A
- What is the maximum drain-source voltage (VDS) of the PSMN2R9-30MLC,115?
The maximum drain-source voltage (VDS) is 30 V.
- What is the typical gate-source threshold voltage (VGS(th)) of this MOSFET?
The typical gate-source threshold voltage (VGS(th)) is 1.78 V.
- What is the maximum continuous drain current (ID) at Tc = 25 °C?
The maximum continuous drain current (ID) is 70 A.
- What is the junction temperature range for this MOSFET?
The junction temperature range is -55 °C to 175 °C.
- What is the total power dissipation (Ptot) at Tc = 25 °C?
The total power dissipation (Ptot) is 91 W.
- What are the typical gate charge (QG) and input capacitance (Ciss) values?
The typical gate charge (QG) is 36.1 nC, and the input capacitance (Ciss) is 2419 pF.
- What package type is used for the PSMN2R9-30MLC,115?
The package type is LFPAK33 (SOT1210).
- What technology is used in this MOSFET?
This MOSFET uses NextPower Superjunction technology.
- What are some common applications for this MOSFET?
Common applications include DC-to-DC converters, load switching, and synchronous buck regulators.
- Is this MOSFET automotive qualified?
No, this specific model is not listed as automotive qualified.
