PSMN1R7-60BS,118
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Nexperia USA Inc. PSMN1R7-60BS,118

Manufacturer No:
PSMN1R7-60BS,118
Manufacturer:
Nexperia USA Inc.
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 60V 120A D2PAK
Delivery:
Payment:
iso14001
iso45001
iso9001
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Product Introduction

Overview

The PSMN1R7-60BS,118 is a high-performance N-channel MOSFET produced by Nexperia USA Inc. This device is designed and qualified for use in a wide range of industrial applications, offering robust performance and reliability. It features a standard level gate drive and is packaged in a D2PAK (TO-263) package, which is qualified to operate at temperatures up to 175 °C.

Key Specifications

ParameterConditionsMinMaxUnit
VDS (Drain-Source Voltage)--60V
VGS (Gate-Source Voltage)--20V
RDS(on) (On-State Drain-Source Resistance)VGS = 10 V, ID = 20 A-2
ID (Continuous Drain Current)TC = 100 °C-60A
TJ (Junction Temperature)--175°C
PD (Power Dissipation)TC = 25 °C-200W

Key Features

  • Standard level N-channel MOSFET with a low on-state resistance (RDS(on)) of 2 mΩ.
  • High continuous drain current (ID) of up to 60 A at TC = 100 °C.
  • Qualified to operate at high junction temperatures up to 175 °C.
  • D2PAK (TO-263) package for efficient heat dissipation and ease of use in various applications.
  • Compliant with the Absolute Maximum Rating System (IEC 60134).

Applications

  • Industrial power supplies and DC-DC converters.
  • Motor control and drive systems.
  • Power management in automotive and aerospace applications.
  • High-power switching and amplification circuits.
  • Renewable energy systems, such as solar and wind power inverters.

Q & A

  1. What is the maximum drain-source voltage (VDS) of the PSMN1R7-60BS,118? The maximum drain-source voltage is 60 V.
  2. What is the on-state drain-source resistance (RDS(on)) of this MOSFET? The on-state drain-source resistance is 2 mΩ at VGS = 10 V and ID = 20 A.
  3. What is the maximum continuous drain current (ID) at TC = 100 °C? The maximum continuous drain current is 60 A at TC = 100 °C.
  4. What is the maximum junction temperature (TJ) for this MOSFET? The maximum junction temperature is 175 °C.
  5. What package type is used for the PSMN1R7-60BS,118? It is packaged in a D2PAK (TO-263) package.
  6. Is the PSMN1R7-60BS,118 suitable for high-temperature applications? Yes, it is qualified to operate at high temperatures up to 175 °C.
  7. What are some common applications for this MOSFET? Common applications include industrial power supplies, motor control, automotive and aerospace power management, and renewable energy systems.
  8. Is the PSMN1R7-60BS,118 compliant with any specific rating systems? Yes, it is compliant with the Absolute Maximum Rating System (IEC 60134).
  9. What is the maximum power dissipation (PD) at TC = 25 °C? The maximum power dissipation is 200 W at TC = 25 °C.
  10. Where can I purchase the PSMN1R7-60BS,118? It is available from various distributors such as Digi-Key, Mouser, and LCSC.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):60 V
Current - Continuous Drain (Id) @ 25°C:120A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:2mOhm @ 25A, 10V
Vgs(th) (Max) @ Id:4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:137 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:9997 pF @ 30 V
FET Feature:- 
Power Dissipation (Max):306W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:D2PAK
Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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