Overview
The PSMN1R3-30YL,115 is a high-performance N-channel MOSFET produced by Nexperia USA Inc. This device is part of Nexperia's Advanced TrenchMOS technology, offering low on-resistance (RDSon) and low gate charge, which are crucial for high-efficiency applications. The MOSFET is packaged in the LFPAK56 (Power-SO8) package, known for its excellent thermal and mechanical characteristics.
Key Specifications
| Parameter | Value |
|---|---|
| Manufacturer Part Number | PSMN1R3-30YL,115 |
| Manufacturer | Nexperia USA Inc. |
| Description | N-Channel 30 V 100A LFPAK MOSFET |
| Drain to Source Voltage (Vdss) | 30 V |
| Current - Continuous Drain (Id) @ 25°C | 100 A (Tc) |
| Package / Case | Tape & Reel (TR), LFPAK56 (Power-SO8) |
| On-Resistance (RDSon) | 1.3 mΩ |
Key Features
- Advanced TrenchMOS technology providing low RDSon and low gate charge.
- High efficiency gains in switching power converters.
- Improved mechanical and thermal characteristics due to the LFPAK56 package.
- Logic level gate drive for easy interface with microcontrollers and other logic circuits.
- EU RoHS compliant and halogen-free according to Nexperia's definitions.
Applications
The PSMN1R3-30YL,115 is suitable for a variety of high-power applications, including:
- Switching power converters and DC-DC converters.
- Motor control and drive systems.
- Power supplies and battery management systems.
- Automotive and industrial power electronics.
Q & A
- What is the maximum drain to source voltage (Vdss) of the PSMN1R3-30YL,115?
The maximum drain to source voltage (Vdss) is 30 V. - What is the continuous drain current (Id) at 25°C for this MOSFET?
The continuous drain current (Id) at 25°C is 100 A (Tc). - What package type is used for the PSMN1R3-30YL,115?
The package type is LFPAK56 (Power-SO8) and it is available in Tape & Reel (TR). - What is the on-resistance (RDSon) of this MOSFET?
The on-resistance (RDSon) is 1.3 mΩ. - Is the PSMN1R3-30YL,115 RoHS compliant?
Yes, it is EU RoHS compliant and halogen-free according to Nexperia's definitions. - What are the key benefits of the Advanced TrenchMOS technology used in this MOSFET?
The key benefits include low RDSon, low gate charge, and improved mechanical and thermal characteristics. - What are some typical applications for the PSMN1R3-30YL,115?
Typical applications include switching power converters, motor control systems, power supplies, and automotive and industrial power electronics. - How does the LFPAK56 package enhance the performance of the MOSFET?
The LFPAK56 package improves the thermal and mechanical characteristics of the MOSFET. - Can the PSMN1R3-30YL,115 be easily driven by logic level signals?
Yes, it is designed for logic level gate drive, making it easy to interface with microcontrollers and other logic circuits. - Where can I find detailed specifications and datasheets for the PSMN1R3-30YL,115?
Detailed specifications and datasheets can be found on the Nexperia website, as well as through distributors like Digi-Key and Mouser.
