PMV213SN,215
  • Share:

Nexperia USA Inc. PMV213SN,215

Manufacturer No:
PMV213SN,215
Manufacturer:
Nexperia USA Inc.
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 100V 1.9A TO236AB
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The PMV213SN,215 is a power MOSFET manufactured by Nexperia USA Inc. This N-channel MOSFET is designed for high-performance applications, offering a balance of low on-resistance, high current handling, and robust thermal characteristics. The device is packaged in a compact SOT-23-3 footprint, making it suitable for a wide range of electronic systems where space is a constraint.

Key Specifications

ParameterValue
VDS (Drain-Source Voltage)100 V
ID (Continuous Drain Current)1.9 A
RDS(on) (On-Resistance)Typically 270 mΩ at VGS = 10 V
VGS(th) (Threshold Voltage)Typically 2.5 V
PD (Power Dissipation)2 W
PackageSOT-23-3

Key Features

  • Low on-resistance (RDS(on)) for reduced power losses.
  • High current handling capability of up to 1.9 A.
  • Compact SOT-23-3 package for space-efficient designs.
  • Robust thermal performance with a power dissipation of 2 W.
  • High drain-source voltage rating of 100 V, suitable for various power applications.

Applications

The PMV213SN,215 is versatile and can be used in a variety of applications, including:

  • Power switching and power management in consumer electronics.
  • Automotive systems, such as battery management and motor control.
  • Industrial control systems, including motor drives and power supplies.
  • Portable electronics, such as laptops and mobile devices.

Q & A

  1. What is the maximum drain-source voltage of the PMV213SN,215?
    The maximum drain-source voltage (VDS) is 100 V.
  2. What is the continuous drain current rating of the PMV213SN,215?
    The continuous drain current (ID) is 1.9 A.
  3. What is the typical on-resistance of the PMV213SN,215?
    The typical on-resistance (RDS(on)) is 270 mΩ at VGS = 10 V.
  4. What is the package type of the PMV213SN,215?
    The package type is SOT-23-3.
  5. What is the power dissipation rating of the PMV213SN,215?
    The power dissipation (PD) is 2 W.
  6. What are some common applications of the PMV213SN,215?
    Common applications include power switching, automotive systems, industrial control systems, and portable electronics.
  7. What is the threshold voltage of the PMV213SN,215?
    The typical threshold voltage (VGS(th)) is 2.5 V.
  8. Is the PMV213SN,215 suitable for high-current applications?
    Yes, it is suitable for high-current applications up to 1.9 A.
  9. Where can I find detailed specifications for the PMV213SN,215?
    Detailed specifications can be found on official Nexperia websites, as well as on distributor sites like Digi-Key, Newark, and TTI.
  10. What is the minimum order quantity for the PMV213SN,215 on some platforms?
    The minimum order quantity can vary but is typically around 2-5 pieces depending on the supplier.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):100 V
Current - Continuous Drain (Id) @ 25°C:1.9A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:250mOhm @ 500mA, 10V
Vgs(th) (Max) @ Id:4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:7 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:330 pF @ 20 V
FET Feature:- 
Power Dissipation (Max):280mW (Tj)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:TO-236AB
Package / Case:TO-236-3, SC-59, SOT-23-3
0 Remaining View Similar

In Stock

$0.62
802

Please send RFQ , we will respond immediately.

Related Product By Categories

FDD86102LZ
FDD86102LZ
onsemi
MOSFET N-CH 100V 8A/35A DPAK
2N7002HSX
2N7002HSX
Nexperia USA Inc.
2N7002HS/SOT363/SC-88
FDMS86255ET150
FDMS86255ET150
onsemi
MOSFET N-CH 150V 10A/63A POWER56
NTHD3101FT1G
NTHD3101FT1G
onsemi
MOSFET P-CH 20V 3.2A CHIPFET
BUK98180-100A/CUX
BUK98180-100A/CUX
Nexperia USA Inc.
MOSFET N-CH 100V 4.6A SOT223
CSD17581Q5AT
CSD17581Q5AT
Texas Instruments
MOSFET N-CH 30V 24A/123A 8VSON
STD36P4LLF6
STD36P4LLF6
STMicroelectronics
MOSFET P-CH 40V 36A DPAK
STP45N10F7
STP45N10F7
STMicroelectronics
MOSFET N-CH 100V 45A TO220
FDMC4435BZ-F127-L701
FDMC4435BZ-F127-L701
onsemi
SINGLE ST3 P Z MLP3.3X3.3
BSS84AKW
BSS84AKW
Nexperia USA Inc.
NOW NEXPERIA BSS84AKW - SMALL SI
STS12NH3LL
STS12NH3LL
STMicroelectronics
MOSFET N-CH 30V 12A 8SO
NVD5490NLT4G
NVD5490NLT4G
onsemi
MOSFET N-CH 60V 5A/17A DPAK-3

Related Product By Brand

BZX84-B9V1/DG/B4R
BZX84-B9V1/DG/B4R
Nexperia USA Inc.
DIODE ZENER 9.1V 250MW TO236AB
BZX84-C6V2/DG/B4R
BZX84-C6V2/DG/B4R
Nexperia USA Inc.
DIODE ZENER 6.2V 250MW TO236AB
BCX56-10,135
BCX56-10,135
Nexperia USA Inc.
TRANS NPN 80V 1A SOT89
BC817-25QB-QZ
BC817-25QB-QZ
Nexperia USA Inc.
SMALL SIGNAL BIPOLAR IN DFN PACK
PBSS5540Z/ZLX
PBSS5540Z/ZLX
Nexperia USA Inc.
TRANS PNP 40V 5A SOT223
BC846A-QVL
BC846A-QVL
Nexperia USA Inc.
TRANS NPN 65V 0.1A TO236AB
74HC244D,652
74HC244D,652
Nexperia USA Inc.
IC BUFFER NON-INVERT 6V 20SO
74HC4050D,652
74HC4050D,652
Nexperia USA Inc.
IC BUFFER NON-INVERT 6V 16SO
HEF4020BT,653
HEF4020BT,653
Nexperia USA Inc.
IC COUNTER BINARY 14STAGE 16SOIC
74HC11D,653
74HC11D,653
Nexperia USA Inc.
IC GATE AND 3CH 3-INP 14SO
74AHC373PW,118
74AHC373PW,118
Nexperia USA Inc.
IC OCTAL D TRANSP LATCH 20TSSOP
74HCT154DB,112
74HCT154DB,112
Nexperia USA Inc.
IC DECODER/DEMUX 1X4:16 24SSOP