PMV213SN,215
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Nexperia USA Inc. PMV213SN,215

Manufacturer No:
PMV213SN,215
Manufacturer:
Nexperia USA Inc.
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 100V 1.9A TO236AB
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The PMV213SN,215 is a power MOSFET manufactured by Nexperia USA Inc. This N-channel MOSFET is designed for high-performance applications, offering a balance of low on-resistance, high current handling, and robust thermal characteristics. The device is packaged in a compact SOT-23-3 footprint, making it suitable for a wide range of electronic systems where space is a constraint.

Key Specifications

ParameterValue
VDS (Drain-Source Voltage)100 V
ID (Continuous Drain Current)1.9 A
RDS(on) (On-Resistance)Typically 270 mΩ at VGS = 10 V
VGS(th) (Threshold Voltage)Typically 2.5 V
PD (Power Dissipation)2 W
PackageSOT-23-3

Key Features

  • Low on-resistance (RDS(on)) for reduced power losses.
  • High current handling capability of up to 1.9 A.
  • Compact SOT-23-3 package for space-efficient designs.
  • Robust thermal performance with a power dissipation of 2 W.
  • High drain-source voltage rating of 100 V, suitable for various power applications.

Applications

The PMV213SN,215 is versatile and can be used in a variety of applications, including:

  • Power switching and power management in consumer electronics.
  • Automotive systems, such as battery management and motor control.
  • Industrial control systems, including motor drives and power supplies.
  • Portable electronics, such as laptops and mobile devices.

Q & A

  1. What is the maximum drain-source voltage of the PMV213SN,215?
    The maximum drain-source voltage (VDS) is 100 V.
  2. What is the continuous drain current rating of the PMV213SN,215?
    The continuous drain current (ID) is 1.9 A.
  3. What is the typical on-resistance of the PMV213SN,215?
    The typical on-resistance (RDS(on)) is 270 mΩ at VGS = 10 V.
  4. What is the package type of the PMV213SN,215?
    The package type is SOT-23-3.
  5. What is the power dissipation rating of the PMV213SN,215?
    The power dissipation (PD) is 2 W.
  6. What are some common applications of the PMV213SN,215?
    Common applications include power switching, automotive systems, industrial control systems, and portable electronics.
  7. What is the threshold voltage of the PMV213SN,215?
    The typical threshold voltage (VGS(th)) is 2.5 V.
  8. Is the PMV213SN,215 suitable for high-current applications?
    Yes, it is suitable for high-current applications up to 1.9 A.
  9. Where can I find detailed specifications for the PMV213SN,215?
    Detailed specifications can be found on official Nexperia websites, as well as on distributor sites like Digi-Key, Newark, and TTI.
  10. What is the minimum order quantity for the PMV213SN,215 on some platforms?
    The minimum order quantity can vary but is typically around 2-5 pieces depending on the supplier.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):100 V
Current - Continuous Drain (Id) @ 25°C:1.9A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:250mOhm @ 500mA, 10V
Vgs(th) (Max) @ Id:4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:7 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:330 pF @ 20 V
FET Feature:- 
Power Dissipation (Max):280mW (Tj)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:TO-236AB
Package / Case:TO-236-3, SC-59, SOT-23-3
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