Overview
The PBSS4041PZ,115 is a high-performance PNP bipolar junction transistor (BJT) manufactured by Nexperia USA Inc. This transistor is designed to offer low collector-emitter saturation voltage (VCEsat), high collector current capability, and high collector current gain (hFE), making it suitable for a variety of power switching and amplification applications.
Key Specifications
| Parameter | Value | Unit |
|---|---|---|
| Collector-Base Voltage (Vcb) | 60 | V |
| Collector-Emitter Voltage (Vce) | 60 | V |
| Emitter-Base Voltage (Veb) | 5 | V |
| Collector Current (Ic) | 5.7 | A |
| Collector Current (Ic) - Peak | 8.6 | A |
| Collector-Emitter Saturation Voltage (VCEsat) | 0.2 | V |
| Collector Current Gain (hFE) | 100-300 | - |
| Power Dissipation (Ptot) | 2.6 | W |
| Package Type | SOT-223-3 | - |
Key Features
- Low Collector-Emitter Saturation Voltage (VCEsat): Ensures minimal voltage drop, reducing power losses and increasing efficiency.
- High Collector Current Capability: Supports high current applications with a maximum collector current of 5.7 A and peak current of 8.6 A.
- High Collector Current Gain (hFE): Provides reliable and consistent performance across a range of collector currents.
- Compact SOT-223-3 Package: Suitable for space-constrained designs while maintaining high performance.
Applications
- Power Switching: Ideal for applications requiring high current switching, such as in power supplies, motor control, and automotive systems.
- Amplification: Suitable for audio and signal amplification due to its low VCEsat and high hFE.
- Industrial Control: Used in industrial automation, robotics, and other high-current control systems.
- Automotive Systems: Applicable in various automotive applications where high reliability and performance are critical.
Q & A
- What is the maximum collector-emitter voltage of the PBSS4041PZ,115 transistor?
The maximum collector-emitter voltage (Vce) is 60 V.
- What is the collector current (Ic) of the PBSS4041PZ,115 transistor?
The maximum collector current (Ic) is 5.7 A, with a peak current of 8.6 A.
- What is the collector-emitter saturation voltage (VCEsat) of this transistor?
The collector-emitter saturation voltage (VCEsat) is typically 0.2 V.
- What package type is used for the PBSS4041PZ,115 transistor?
The transistor is packaged in a SOT-223-3 package.
- What are the typical applications of the PBSS4041PZ,115 transistor?
It is typically used in power switching, amplification, industrial control, and automotive systems.
- What is the power dissipation (Ptot) of the PBSS4041PZ,115 transistor?
The power dissipation (Ptot) is 2.6 W.
- Is the PBSS4041PZ,115 transistor RoHS compliant?
- What is the emitter-base voltage (Veb) of the PBSS4041PZ,115 transistor?
- What is the collector current gain (hFE) of the PBSS4041PZ,115 transistor?
- Where can I find detailed specifications and datasheets for the PBSS4041PZ,115 transistor?
