PBSS4041PX,115
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Nexperia USA Inc. PBSS4041PX,115

Manufacturer No:
PBSS4041PX,115
Manufacturer:
Nexperia USA Inc.
Package:
Tape & Reel (TR)
Description:
TRANS PNP 60V 5A SOT89
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The PBSS4041PX,115 is a high-performance PNP bipolar junction transistor (BJT) manufactured by Nexperia USA Inc. This transistor is designed to offer excellent electrical characteristics, making it suitable for a wide range of applications. It features a surface mount SOT-89 package, which is compact and ideal for modern electronic designs.

Key Specifications

Parameter Value
Collector-Base Voltage (Vcbo) 60 V
Collector-Emitter Voltage (Vceo) 60 V
Emitter-Base Voltage (Vebo) -5 V
Collector Current (Ic) 5 A
Collector-Emitter Saturation Voltage (Vce(sat)) Very low
Gain Bandwidth Product 110 MHz
Current Gain (hFE) Min 200
Power Dissipation (Ptot) 2.5 W
Package Type SOT-89

Key Features

  • Very Low Collector-Emitter Saturation Voltage (Vce(sat)): Ensures minimal voltage drop, making it efficient for high-current applications.
  • High Collector Current Capability: Supports up to 5 A, suitable for demanding applications.
  • High Collector Current Gain (hFE): Provides a high current gain at high collector currents, enhancing the transistor's performance.
  • High Frequency Capability: With a gain bandwidth product of 110 MHz, it is suitable for high-frequency applications.
  • Compact SOT-89 Package: Ideal for space-constrained designs and modern electronic systems.

Applications

  • Power Switching: Due to its high collector current and low Vce(sat), it is ideal for power switching applications.
  • Amplifier Circuits: Suitable for amplifier circuits requiring high current gain and low distortion.
  • Automotive Systems: Can be used in automotive systems where high reliability and performance are critical.
  • Industrial Control Systems: Applicable in industrial control systems that require robust and efficient transistors.

Q & A

  1. What is the collector-emitter voltage rating of the PBSS4041PX,115 transistor?

    The collector-emitter voltage rating is 60 V.

  2. What is the maximum collector current of the PBSS4041PX,115 transistor?

    The maximum collector current is 5 A.

  3. What is the package type of the PBSS4041PX,115 transistor?

    The package type is SOT-89.

  4. What is the gain bandwidth product of the PBSS4041PX,115 transistor?

    The gain bandwidth product is 110 MHz.

  5. What is the minimum current gain (hFE) of the PBSS4041PX,115 transistor?

    The minimum current gain (hFE) is 200.

  6. What is the power dissipation rating of the PBSS4041PX,115 transistor?

    The power dissipation rating is 2.5 W.

  7. What are some typical applications of the PBSS4041PX,115 transistor?

    Typical applications include power switching, amplifier circuits, automotive systems, and industrial control systems.

  8. Why is the PBSS4041PX,115 transistor considered efficient for high-current applications?

    It is considered efficient due to its very low collector-emitter saturation voltage (Vce(sat)).

  9. What is the emitter-base voltage rating of the PBSS4041PX,115 transistor?

    The emitter-base voltage rating is -5 V.

  10. Where can I find detailed specifications and datasheets for the PBSS4041PX,115 transistor?

    Detailed specifications and datasheets can be found on the Nexperia website, Digi-Key, Mouser Electronics, and other authorized distributors.

Product Attributes

Transistor Type:PNP
Current - Collector (Ic) (Max):5 A
Voltage - Collector Emitter Breakdown (Max):60 V
Vce Saturation (Max) @ Ib, Ic:300mV @ 500mA, 5A
Current - Collector Cutoff (Max):100nA
DC Current Gain (hFE) (Min) @ Ic, Vce:150 @ 2A, 2V
Power - Max:2.5 W
Frequency - Transition:110MHz
Operating Temperature:150°C (TJ)
Mounting Type:Surface Mount
Package / Case:TO-243AA
Supplier Device Package:SOT-89
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Similar Products

Part Number PBSS4041PX,115 PBSS4041PZ,115 PBSS4021PX,115 PBSS4041NX,115
Manufacturer Nexperia USA Inc. Nexperia USA Inc. NXP Semiconductors Nexperia USA Inc.
Product Status Active Active Active Active
Transistor Type PNP PNP PNP NPN
Current - Collector (Ic) (Max) 5 A 5.7 A 6.2 A 6.2 A
Voltage - Collector Emitter Breakdown (Max) 60 V 60 V 20 V 60 V
Vce Saturation (Max) @ Ib, Ic 300mV @ 500mA, 5A 285mV @ 300mA, 6A 265mV @ 345mA, 6.9A 210mV @ 300mA, 6A
Current - Collector Cutoff (Max) 100nA 100nA 100nA 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce 150 @ 2A, 2V 200 @ 2A, 2V 150 @ 4A, 2V 150 @ 4A, 2V
Power - Max 2.5 W 2.6 W 2.5 W 2.5 W
Frequency - Transition 110MHz 110MHz 105MHz 130MHz
Operating Temperature 150°C (TJ) 150°C (TJ) 150°C (TJ) 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount
Package / Case TO-243AA TO-261-4, TO-261AA TO-243AA TO-243AA
Supplier Device Package SOT-89 SOT-223 SOT-89 SOT-89

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