Overview
The PBSS4041NZ,115 is a high-performance NPN low VCEsat (Breakthrough In Small Signal, BISS) transistor manufactured by Nexperia USA Inc. This transistor is housed in a SOT223 (SC-73) medium power Surface-Mounted Device (SMD) plastic package. It is designed to offer very low collector-emitter saturation voltage (VCEsat), high collector current capability, and high collector current gain (hFE) at high collector currents. This makes it an ideal choice for various applications requiring high energy efficiency and reliability.
Key Specifications
| Parameter | Conditions | Min | Typ | Max | Unit |
|---|---|---|---|---|---|
| VCEO (Collector-Emitter Voltage) | Open base | - | - | 60 | V |
| IC (Collector Current) | - | - | - | 7 | A |
| ICM (Peak Collector Current) | Single pulse; tp ≤ 1 ms | - | - | 15 | A |
| RCEsat (Collector-Emitter Saturation Resistance) | IC = 6 A; IB = 600 mA; pulsed; tp ≤ 300 µs; δ ≤ 0.02 ; Tamb = 25 °C | - | 17.5 | 25 | mΩ |
| IB (Base Current) | - | - | - | 1 | A |
| Ptot (Total Power Dissipation) | Tamb ≤ 25 °C | - | - | 770 | mW |
| Tj (Junction Temperature) | - | - | - | 150 | °C |
| Tamb (Ambient Temperature) | - | -55 | - | 150 | °C |
| Tstg (Storage Temperature) | - | -65 | - | 150 | °C |
| ft (Transition Frequency) | - | - | - | 105 | MHz |
| hFE (DC Current Gain) | - | - | - | 500 | - |
Key Features
- Very low collector-emitter saturation voltage (VCEsat): Ensures high energy efficiency due to less heat generation.
- High collector current capability (IC and ICM): Supports high current applications.
- High collector current gain (hFE) at high IC: Provides reliable performance in high-current scenarios.
- AEC-Q101 qualified: Suitable for automotive applications, ensuring reliability and durability.
- Smaller required PCB area: Compact SOT223 package reduces the footprint on the PCB.
Applications
- Loadswitch: Ideal for switching high currents efficiently.
- Battery-driven devices: Suitable for devices powered by batteries, optimizing energy consumption.
- Power management: Used in various power management circuits to enhance efficiency.
- Charging circuits: Employed in charging circuits for batteries and other devices.
- Power switches (e.g., motors, fans): Controls the power supply to motors and fans, among other applications.
Q & A
- What is the collector-emitter voltage (VCEO) of the PBSS4041NZ,115 transistor?
The collector-emitter voltage (VCEO) is up to 60 V.
- What is the maximum collector current (IC) of the PBSS4041NZ,115 transistor?
The maximum collector current (IC) is 7 A.
- What is the peak collector current (ICM) of the PBSS4041NZ,115 transistor?
The peak collector current (ICM) is up to 15 A for a single pulse with tp ≤ 1 ms.
- What is the collector-emitter saturation resistance (RCEsat) of the PBSS4041NZ,115 transistor?
The collector-emitter saturation resistance (RCEsat) is typically 17.5 mΩ to 25 mΩ.
- Is the PBSS4041NZ,115 transistor AEC-Q101 qualified?
Yes, the PBSS4041NZ,115 transistor is AEC-Q101 qualified, making it suitable for automotive applications.
- What is the junction temperature (Tj) range of the PBSS4041NZ,115 transistor?
The junction temperature (Tj) range is from -55°C to 150°C.
- What is the transition frequency (ft) of the PBSS4041NZ,115 transistor?
The transition frequency (ft) is up to 105 MHz.
- What is the DC current gain (hFE) of the PBSS4041NZ,115 transistor?
The DC current gain (hFE) is typically 500.
- In what package is the PBSS4041NZ,115 transistor available?
The transistor is available in a SOT223 (SC-73) package.
- What are some common applications of the PBSS4041NZ,115 transistor?
Common applications include loadswitch, battery-driven devices, power management, charging circuits, and power switches for motors and fans.
