PBHV8115X,115
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Nexperia USA Inc. PBHV8115X,115

Manufacturer No:
PBHV8115X,115
Manufacturer:
Nexperia USA Inc.
Package:
Tape & Reel (TR)
Description:
TRANS NPN 150V 1A SOT89
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The PBHV8115X,115 is a high-performance NPN bipolar junction transistor (BJT) manufactured by Nexperia USA Inc. This transistor is designed to handle a variety of high-demand application scenarios, offering robust performance and reliability. It is packaged in the SOT-89-3 form factor, making it suitable for surface mount applications and ensuring ease of integration onto circuit boards.

Key Specifications

ParameterValue
Collector-Base Voltage (VCBO)400 V
Collector-Emitter Saturation Voltage (VCE(sat))33 mV
Maximum Collector Current (Ic)1 A
Maximum Power Dissipation (Ptot)1.5 W
Package TypeSOT-89-3
RoHS StatusLead Free / RoHS Compliant

Key Features

  • High collector current capability of up to 1 A, making it suitable for applications requiring significant current handling.
  • Low collector-emitter saturation voltage of 33 mV, which helps in reducing energy consumption and improving efficiency.
  • High collector-base voltage of 400 V, ensuring stability and reliability in high-voltage applications.
  • SOT-89-3 packaging, which is compact and suitable for surface mount technology, facilitating easy integration and good heat dissipation.

Applications

  • Analog Switches: Can be used to control the on and off of analog signals, such as in audio applications.
  • Drive Circuits: Suitable for driving various load devices like electric motors and displays.
  • Microwave Amplifiers: Its high-frequency response characteristics make it ideal for microwave amplifier circuits.
  • Constant Current Source: Can be used to construct simple constant current source circuits, providing stable output current.

Q & A

  1. What is the maximum collector current of the PBHV8115X,115 transistor?
    The maximum collector current is 1 A.
  2. What is the collector-emitter saturation voltage of the PBHV8115X,115?
    The collector-emitter saturation voltage is 33 mV.
  3. What is the package type of the PBHV8115X,115 transistor?
    The package type is SOT-89-3.
  4. Is the PBHV8115X,115 RoHS compliant?
    Yes, it is Lead Free / RoHS Compliant.
  5. What are some common applications of the PBHV8115X,115 transistor?
    Common applications include analog switches, drive circuits, microwave amplifiers, and constant current sources.
  6. What is the maximum power dissipation of the PBHV8115X,115 transistor?
    The maximum power dissipation is 1.5 W.
  7. What is the collector-base voltage of the PBHV8115X,115 transistor?
    The collector-base voltage is 400 V.
  8. Where can I purchase the PBHV8115X,115 transistor?
    You can purchase it from distributors like Digi-Key, Mouser Electronics, and Arrow Electronics.
  9. What are the benefits of using the SOT-89-3 package type?
    The SOT-89-3 package is compact, suitable for surface mount technology, and offers good heat dissipation.
  10. Can the PBHV8115X,115 be used in high-frequency applications?
    Yes, it is suitable for high-frequency applications due to its high-frequency response characteristics.

Product Attributes

Transistor Type:NPN
Current - Collector (Ic) (Max):1 A
Voltage - Collector Emitter Breakdown (Max):150 V
Vce Saturation (Max) @ Ib, Ic:50mV @ 20mA, 100mA
Current - Collector Cutoff (Max):100nA
DC Current Gain (hFE) (Min) @ Ic, Vce:100 @ 50mA, 10V
Power - Max:1.5 W
Frequency - Transition:30MHz
Operating Temperature:150°C (TJ)
Mounting Type:Surface Mount
Package / Case:TO-243AA
Supplier Device Package:SOT-89
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Similar Products

Part Number PBHV8115X,115 PBHV8115Z,115 PBHV9115X,115
Manufacturer Nexperia USA Inc. Nexperia USA Inc. Nexperia USA Inc.
Product Status Active Active Active
Transistor Type NPN NPN PNP
Current - Collector (Ic) (Max) 1 A 1 A 1 A
Voltage - Collector Emitter Breakdown (Max) 150 V 150 V 150 V
Vce Saturation (Max) @ Ib, Ic 50mV @ 20mA, 100mA 350mV @ 200mA, 1A 300mV @ 50mA, 500mA
Current - Collector Cutoff (Max) 100nA 100nA 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 50mA, 10V 50 @ 500mA, 10V 100 @ 100mA, 10V
Power - Max 1.5 W 1.4 W 1.5 W
Frequency - Transition 30MHz 30MHz 115MHz
Operating Temperature 150°C (TJ) 150°C (TJ) 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount
Package / Case TO-243AA TO-261-4, TO-261AA TO-243AA
Supplier Device Package SOT-89 SOT-223 SOT-89

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