Overview
The PBHV8115Z,115 is a high-performance NPN bipolar junction transistor (BJT) manufactured by Nexperia USA Inc. This transistor is designed to operate at high voltages and currents, making it suitable for a variety of demanding applications. It features a small form factor, specifically the SOT-223 package, which allows for more design flexibility and reduced board space usage. The device is known for its low collector-emitter saturation voltage and high collector current capability, enhancing its efficiency and reliability in various electronic circuits.
Key Specifications
| Parameter | Value |
|---|---|
| Transistor Type | NPN Bipolar Junction Transistor (BJT) |
| Maximum Collector-Emitter Voltage (Vceo) | 150 V |
| Maximum Collector Current (Ic) | 1 A |
| Maximum Power Dissipation (Pd) | 1.4 W |
| Frequency Transition (ft) | 30 MHz |
| Collector-Emitter Saturation Voltage (Vce(sat)) | 350 mV @ 400 mA, 1 A |
| DC Current Gain (hFE) | 80 @ 1 A, 10 V |
| Package Type | SOT-223 |
| Operating Junction Temperature (Tj) | 150°C |
| RoHS Status | Lead Free / RoHS Compliant |
Key Features
- High voltage capability up to 150 V
- Low collector-emitter saturation voltage (Vce(sat)) for reduced energy consumption
- High collector current capability of 1 A
- High collector current gain (hFE) for improved current amplification
- High-frequency response up to 30 MHz, suitable for high-frequency applications
- Compact SOT-223 package for reduced board space and increased design flexibility
- Good heat dissipation performance at operating temperatures up to 150°C
Applications
- Analog switch: Control the on and off of analog signals, such as in audio circuits.
- Drive circuit: Drive various load devices like electric motors and displays.
- Microwave amplifier: Utilize its high-frequency response characteristics for microwave amplifiers.
- Constant current source: Used in various DC power supply circuits to provide stable output current.
Q & A
- What is the maximum collector-emitter voltage of the PBHV8115Z,115 transistor?
The maximum collector-emitter voltage (Vceo) is 150 V. - What is the maximum collector current of the PBHV8115Z,115 transistor?
The maximum collector current (Ic) is 1 A. - What is the package type of the PBHV8115Z,115 transistor?
The package type is SOT-223. - What is the frequency transition (ft) of the PBHV8115Z,115 transistor?
The frequency transition (ft) is 30 MHz. - Is the PBHV8115Z,115 RoHS compliant?
Yes, the PBHV8115Z,115 is Lead Free / RoHS Compliant. - What is the collector-emitter saturation voltage (Vce(sat)) of the PBHV8115Z,115 transistor?
The collector-emitter saturation voltage (Vce(sat)) is 350 mV @ 400 mA, 1 A. - What are some common applications of the PBHV8115Z,115 transistor?
Common applications include analog switches, drive circuits, microwave amplifiers, and constant current sources. - What is the DC current gain (hFE) of the PBHV8115Z,115 transistor?
The DC current gain (hFE) is 80 @ 1 A, 10 V. - What is the maximum power dissipation (Pd) of the PBHV8115Z,115 transistor?
The maximum power dissipation (Pd) is 1.4 W. - What is the operating junction temperature (Tj) of the PBHV8115Z,115 transistor?
The operating junction temperature (Tj) is up to 150°C.
