NX3008PBKVL
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Nexperia USA Inc. NX3008PBKVL

Manufacturer No:
NX3008PBKVL
Manufacturer:
Nexperia USA Inc.
Package:
Tape & Reel (TR)
Description:
MOSFET P-CH 30V 230MA TO236AB
Delivery:
Payment:
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iso45001
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Product Introduction

Overview

The NX3008PBKVL is a P-channel enhancement mode Field-Effect Transistor (FET) manufactured by Nexperia USA Inc. This device is part of Nexperia's extensive portfolio of MOSFETs, which are designed to meet the demands of various industries including automotive, industrial, power, computing, consumer, mobile, and wearables. The NX3008PBKVL uses Trench MOSFET technology and is packaged in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package.

Key Specifications

Parameter Value
Type Number NX3008PBKVL
Package SOT23 (TO-236AB)
Channel Type P-channel
Number of Transistors 1
VDS [max] (V) -30
VGS [max] (V) 8
RDSon [max] @ VGS = 4.5 V; @25°C (mΩ) 4100
RDSon [max] @ VGS = 2.5 V (mΩ) 6500
Tj [max] (°C) 150
ID [max] (A) -0.23
QGD [typ] (nC) 0.09
QG(tot) [typ] @ VGS = 4.5 V (nC) 0.55
Ptot [max] (W) 0.35
VGSth [typ] (V) -0.9
Automotive Qualified Yes
Ciss [typ] (pF) 31
Coss [typ] (pF) 6.5
Release Date 2011-07-19

Key Features

  • Trench MOSFET Technology: Offers high efficiency and low on-resistance.
  • Small SOT23 Package: Compact SMD package suitable for space-constrained designs.
  • High Voltage and Current Ratings: Maximum drain-source voltage of -30 V and maximum drain current of -0.23 A.
  • Low On-Resistance: RDSon of 4100 mΩ at VGS = 4.5 V and 6500 mΩ at VGS = 2.5 V.
  • Automotive Qualified: Meets AEC-Q100/Q101 standards, suitable for automotive applications.
  • High Junction Temperature Rating: Maximum junction temperature of 150°C, suitable for thermally demanding environments.

Applications

  • Automotive Electronics: Suitable for various automotive applications due to its automotive qualification and robust performance.
  • Industrial Electronics: Used in industrial power systems, motor drives, and other high-reliability applications.
  • Power Management: Ideal for power management in computing, consumer, and mobile devices.
  • Wearables and IoT Devices: Compact package makes it suitable for wearables and IoT applications where space is limited.

Q & A

  1. What is the maximum drain-source voltage (VDS) of the NX3008PBKVL?

    The maximum drain-source voltage (VDS) is -30 V.

  2. What is the package type of the NX3008PBKVL?

    The package type is SOT23 (TO-236AB).

  3. Is the NX3008PBKVL automotive qualified?

    Yes, it is automotive qualified and meets AEC-Q100/Q101 standards.

  4. What is the maximum junction temperature (Tj) of the NX3008PBKVL?

    The maximum junction temperature (Tj) is 150°C.

  5. What is the typical threshold voltage (VGSth) of the NX3008PBKVL?

    The typical threshold voltage (VGSth) is -0.9 V.

  6. What is the maximum on-resistance (RDSon) at VGS = 4.5 V?

    The maximum on-resistance (RDSon) at VGS = 4.5 V is 4100 mΩ.

  7. What is the typical input capacitance (Ciss) of the NX3008PBKVL?

    The typical input capacitance (Ciss) is 31 pF.

  8. What is the release date of the NX3008PBKVL?

    The release date is 2011-07-19.

  9. Can the NX3008PBKVL be used in high-temperature environments?

    Yes, it can be used in high-temperature environments due to its high junction temperature rating of 150°C.

  10. Is the NX3008PBKVL suitable for power management in computing devices?

    Yes, it is suitable for power management in computing devices due to its low on-resistance and high efficiency.

Product Attributes

FET Type:P-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):30 V
Current - Continuous Drain (Id) @ 25°C:230mA (Ta)
Drive Voltage (Max Rds On, Min Rds On):2.5V, 4.5V
Rds On (Max) @ Id, Vgs:4.1Ohm @ 200mA, 4.5V
Vgs(th) (Max) @ Id:1.1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:0.72 nC @ 4.5 V
Vgs (Max):±8V
Input Capacitance (Ciss) (Max) @ Vds:46 pF @ 15 V
FET Feature:- 
Power Dissipation (Max):350mW (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:TO-236AB
Package / Case:TO-236-3, SC-59, SOT-23-3
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Similar Products

Part Number NX3008PBKVL NX3008NBKVL
Manufacturer Nexperia USA Inc. Nexperia USA Inc.
Product Status Active Active
FET Type P-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V 30 V
Current - Continuous Drain (Id) @ 25°C 230mA (Ta) 400mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) 2.5V, 4.5V 1.8V, 4.5V
Rds On (Max) @ Id, Vgs 4.1Ohm @ 200mA, 4.5V 1.4Ohm @ 350mA, 4.5V
Vgs(th) (Max) @ Id 1.1V @ 250µA 1.1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 0.72 nC @ 4.5 V 0.68 nC @ 4.5 V
Vgs (Max) ±8V ±8V
Input Capacitance (Ciss) (Max) @ Vds 46 pF @ 15 V 50 pF @ 15 V
FET Feature - -
Power Dissipation (Max) 350mW (Ta) 350mW (Ta), 1.14W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package TO-236AB TO-236AB
Package / Case TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3

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