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NX3008NBKVL
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Nexperia USA Inc. NX3008NBKVL

Manufacturer No:
NX3008NBKVL
Manufacturer:
Nexperia USA Inc.
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 30V 400MA TO236AB
Delivery:
Payment:
iso14001
iso45001
iso9001
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Product Introduction

Overview

The NX3008NBKVL is an N-channel enhancement mode Field-Effect Transistor (FET) produced by Nexperia USA Inc. This component utilizes Trench MOSFET technology and is packaged in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package. It is designed for high-performance applications requiring fast switching and low threshold voltage.

Key Specifications

Parameter Conditions Min Max Unit
VDS (drain-source voltage) Tj = 25 °C - - 30 V
VGS (gate-source voltage) - -8 - 8 V
ID (drain current) VGS = 4.5 V; Tj = 25 °C - - 0.4 A
RDSon (on-state resistance) VGS = 4.5 V; Tj = 25 °C - 1400 - mΩ
Tj (junction temperature) - -55 - 150 °C
VGSth (gate-source threshold voltage) ID = 250 µA; VDS = VGS; Tj = 25 °C 0.6 0.9 1.1 V
QGD (gate-drain charge) - - 0.08 - nC
Ciss (input capacitance) VDS = 15 V; f = 1 MHz; VGS = 0 V; Tj = 25 °C - 34 - pF
Coss (output capacitance) - - 6.5 - pF

Key Features

  • Very fast switching
  • Low threshold voltage
  • Trench MOSFET technology for improved performance
  • ESD protection up to 2 kV
  • AEC-Q101 qualified, ensuring reliability for automotive applications

Applications

  • Relay driver
  • High-speed line driver
  • Low-side load switch
  • Switching circuits
  • Automotive and industrial electronics
  • Power, computing, consumer, mobile, and wearable devices

Q & A

  1. What is the maximum drain-source voltage of the NX3008NBKVL?

    The maximum drain-source voltage (VDS) is 30 V.

  2. What is the typical gate-source threshold voltage of the NX3008NBKVL?

    The typical gate-source threshold voltage (VGSth) is 0.9 V.

  3. Does the NX3008NBKVL have ESD protection?

    Yes, it has ESD protection up to 2 kV.

  4. Is the NX3008NBKVL AEC-Q101 qualified?

    Yes, it is AEC-Q101 qualified, making it suitable for automotive applications.

  5. What are the typical applications of the NX3008NBKVL?

    Typical applications include relay drivers, high-speed line drivers, low-side load switches, and switching circuits.

  6. What is the maximum junction temperature of the NX3008NBKVL?

    The maximum junction temperature (Tj) is 150 °C.

  7. What is the package type of the NX3008NBKVL?

    The package type is SOT23 (TO-236AB).

  8. What is the maximum on-state resistance of the NX3008NBKVL at VGS = 4.5 V?

    The maximum on-state resistance (RDSon) at VGS = 4.5 V is 1400 mΩ.

  9. What is the input capacitance of the NX3008NBKVL?

    The input capacitance (Ciss) is typically 34 pF.

  10. Where can I purchase the NX3008NBKVL?

    You can purchase the NX3008NBKVL from various distributors such as Arrow, Avnet, Digi-Key, Mouser Electronics, and others listed on Nexperia's website.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):30 V
Current - Continuous Drain (Id) @ 25°C:400mA (Ta)
Drive Voltage (Max Rds On, Min Rds On):1.8V, 4.5V
Rds On (Max) @ Id, Vgs:1.4Ohm @ 350mA, 4.5V
Vgs(th) (Max) @ Id:1.1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:0.68 nC @ 4.5 V
Vgs (Max):±8V
Input Capacitance (Ciss) (Max) @ Vds:50 pF @ 15 V
FET Feature:- 
Power Dissipation (Max):350mW (Ta), 1.14W (Tc)
Operating Temperature:150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:TO-236AB
Package / Case:TO-236-3, SC-59, SOT-23-3
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Similar Products

Part Number NX3008NBKVL NX3008PBKVL
Manufacturer Nexperia USA Inc. Nexperia USA Inc.
Product Status Active Active
FET Type N-Channel P-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V 30 V
Current - Continuous Drain (Id) @ 25°C 400mA (Ta) 230mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) 1.8V, 4.5V 2.5V, 4.5V
Rds On (Max) @ Id, Vgs 1.4Ohm @ 350mA, 4.5V 4.1Ohm @ 200mA, 4.5V
Vgs(th) (Max) @ Id 1.1V @ 250µA 1.1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 0.68 nC @ 4.5 V 0.72 nC @ 4.5 V
Vgs (Max) ±8V ±8V
Input Capacitance (Ciss) (Max) @ Vds 50 pF @ 15 V 46 pF @ 15 V
FET Feature - -
Power Dissipation (Max) 350mW (Ta), 1.14W (Tc) 350mW (Ta)
Operating Temperature 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package TO-236AB TO-236AB
Package / Case TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3

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