BUK9Y58-75B,115
  • Share:

Nexperia USA Inc. BUK9Y58-75B,115

Manufacturer No:
BUK9Y58-75B,115
Manufacturer:
Nexperia USA Inc.
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 75V 20.73A LFPAK56
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BUK9Y58-75B,115 is a high-performance N-channel TrenchMOS logic level FET produced by Nexperia USA Inc. This power MOSFET is designed to operate in demanding environments, making it suitable for various automotive and industrial applications. It features a robust design with low conduction losses and is compliant with Q101 standards, ensuring reliability and efficiency in its operation.

Key Specifications

ParameterValue
VDS (Drain-Source Voltage)75 V
ID (Continuous Drain Current at Tc)20.73 A
Ptot (Total Power Dissipation at Tc)60.4 W
RDS(on) (On-State Resistance)Low on-state resistance
Tj (Junction Temperature)+175°C
PackageLFPAK56, Power-SO8

Key Features

  • Low conduction losses due to low on-state resistance.
  • Q101 compliant, ensuring high reliability and quality standards.
  • Suitable for logic level gate drive sources.
  • Designed for thermally demanding environments with a +175°C junction temperature rating.
  • Robust LFPAK56 and Power-SO8 packaging for efficient heat dissipation.

Applications

The BUK9Y58-75B,115 is primarily used in automotive and industrial applications where high reliability and thermal performance are critical. It is suitable for use in power management systems, motor control, and other high-power electronic circuits that require efficient and robust operation in hostile environments.

Q & A

  1. What is the drain-source voltage rating of the BUK9Y58-75B,115?
    The drain-source voltage rating is 75 V.
  2. What is the continuous drain current at Tc for this MOSFET?
    The continuous drain current at Tc is 20.73 A.
  3. What is the total power dissipation at Tc for this device?
    The total power dissipation at Tc is 60.4 W.
  4. What is the junction temperature rating of the BUK9Y58-75B,115?
    The junction temperature rating is +175°C.
  5. Is the BUK9Y58-75B,115 Q101 compliant?
    Yes, it is Q101 compliant.
  6. What type of packaging does the BUK9Y58-75B,115 use?
    The device uses LFPAK56 and Power-SO8 packaging.
  7. What are the key benefits of the low on-state resistance in this MOSFET?
    The low on-state resistance reduces conduction losses, improving overall efficiency and performance.
  8. Is the BUK9Y58-75B,115 suitable for logic level gate drive sources?
    Yes, it is suitable for logic level gate drive sources.
  9. In what types of applications is the BUK9Y58-75B,115 typically used?
    It is typically used in automotive and industrial applications where high reliability and thermal performance are critical.
  10. What makes the BUK9Y58-75B,115 robust for thermally demanding environments?
    The device is designed for thermally demanding environments due to its +175°C junction temperature rating and efficient packaging.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):75 V
Current - Continuous Drain (Id) @ 25°C:20.73A (Tc)
Drive Voltage (Max Rds On, Min Rds On):5V, 10V
Rds On (Max) @ Id, Vgs:53mOhm @ 10A, 10V
Vgs(th) (Max) @ Id:2.15V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:10.7 nC @ 5 V
Vgs (Max):±15V
Input Capacitance (Ciss) (Max) @ Vds:1137 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):60.4W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:LFPAK56, Power-SO8
Package / Case:SC-100, SOT-669
0 Remaining View Similar

In Stock

$0.83
218

Please send RFQ , we will respond immediately.

Related Product By Categories

STD26P3LLH6
STD26P3LLH6
STMicroelectronics
MOSFET P-CH 30V 12A DPAK
BSS84KW-TP
BSS84KW-TP
Micro Commercial Co
MOSFET P-CH 50V 130MA SOT323
FDMC2523P
FDMC2523P
onsemi
MOSFET P-CH 150V 3A 8MLP
FQT7N10LTF
FQT7N10LTF
onsemi
MOSFET N-CH 100V 1.7A SOT223-4
NTMFS5C646NLT1G
NTMFS5C646NLT1G
onsemi
MOSFET N-CH 60V 19A 5DFN
2N7002-TP
2N7002-TP
Micro Commercial Co
MOSFET N-CH 60V 115MA SOT23
STD5N52U
STD5N52U
STMicroelectronics
MOSFET N-CH 525V 4.4A DPAK
STD2NK100Z
STD2NK100Z
STMicroelectronics
MOSFET N-CH 1000V 1.85A DPAK
STP8N120K5
STP8N120K5
STMicroelectronics
MOSFET N-CH 1200V 6A TO220
NTMFS6H818NT1G
NTMFS6H818NT1G
onsemi
MOSFET N-CH 80V 20A/123A 5DFN
STL36N55M5
STL36N55M5
STMicroelectronics
MOSFET N-CH 550V 22.5A 4PWRFLAT
MTB30P06VT4G
MTB30P06VT4G
onsemi
MOSFET P-CH 60V 30A D2PAK

Related Product By Brand

BAS21J/ZLF
BAS21J/ZLF
Nexperia USA Inc.
DIODE GEN PURP 300V 250MA SC90
PBSS4160TVL
PBSS4160TVL
Nexperia USA Inc.
TRANS NPN 60V 1A TO236AB
BCP56-QF
BCP56-QF
Nexperia USA Inc.
TRANS NPN 80V 1A SOT223
74HCT4051PW,112
74HCT4051PW,112
Nexperia USA Inc.
IC MUX/DEMUX 8X1 16TSSOP
74HC1G66GW-Q100H
74HC1G66GW-Q100H
Nexperia USA Inc.
IC ANLG SWITCH SPST 5TSSOP
HEF4067BT,652
HEF4067BT,652
Nexperia USA Inc.
IC MUX/DEMUX 4X16 24SOIC
74HC126PW,118
74HC126PW,118
Nexperia USA Inc.
IC BUFFER NON-INVERT 6V 14TSSOP
74HC541D-Q100J
74HC541D-Q100J
Nexperia USA Inc.
IC BUFFER NON-INVERT 6V 20SO
74LVC1G126GW-Q100H
74LVC1G126GW-Q100H
Nexperia USA Inc.
IC BUF NON-INVERT 5.5V 5TSSOP
74HCT245D,652
74HCT245D,652
Nexperia USA Inc.
IC TXRX NON-INVERT 5.5V 20SO
74HC1G00GW-Q100H
74HC1G00GW-Q100H
Nexperia USA Inc.
IC GATE NAND 1CH 2-INP 5TSSOP
74LVC138ADB,118
74LVC138ADB,118
Nexperia USA Inc.
IC DECODER/DEMUX 1X3:8 16SSOP