BUK9Y58-75B,115
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Nexperia USA Inc. BUK9Y58-75B,115

Manufacturer No:
BUK9Y58-75B,115
Manufacturer:
Nexperia USA Inc.
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 75V 20.73A LFPAK56
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BUK9Y58-75B,115 is a high-performance N-channel TrenchMOS logic level FET produced by Nexperia USA Inc. This power MOSFET is designed to operate in demanding environments, making it suitable for various automotive and industrial applications. It features a robust design with low conduction losses and is compliant with Q101 standards, ensuring reliability and efficiency in its operation.

Key Specifications

ParameterValue
VDS (Drain-Source Voltage)75 V
ID (Continuous Drain Current at Tc)20.73 A
Ptot (Total Power Dissipation at Tc)60.4 W
RDS(on) (On-State Resistance)Low on-state resistance
Tj (Junction Temperature)+175°C
PackageLFPAK56, Power-SO8

Key Features

  • Low conduction losses due to low on-state resistance.
  • Q101 compliant, ensuring high reliability and quality standards.
  • Suitable for logic level gate drive sources.
  • Designed for thermally demanding environments with a +175°C junction temperature rating.
  • Robust LFPAK56 and Power-SO8 packaging for efficient heat dissipation.

Applications

The BUK9Y58-75B,115 is primarily used in automotive and industrial applications where high reliability and thermal performance are critical. It is suitable for use in power management systems, motor control, and other high-power electronic circuits that require efficient and robust operation in hostile environments.

Q & A

  1. What is the drain-source voltage rating of the BUK9Y58-75B,115?
    The drain-source voltage rating is 75 V.
  2. What is the continuous drain current at Tc for this MOSFET?
    The continuous drain current at Tc is 20.73 A.
  3. What is the total power dissipation at Tc for this device?
    The total power dissipation at Tc is 60.4 W.
  4. What is the junction temperature rating of the BUK9Y58-75B,115?
    The junction temperature rating is +175°C.
  5. Is the BUK9Y58-75B,115 Q101 compliant?
    Yes, it is Q101 compliant.
  6. What type of packaging does the BUK9Y58-75B,115 use?
    The device uses LFPAK56 and Power-SO8 packaging.
  7. What are the key benefits of the low on-state resistance in this MOSFET?
    The low on-state resistance reduces conduction losses, improving overall efficiency and performance.
  8. Is the BUK9Y58-75B,115 suitable for logic level gate drive sources?
    Yes, it is suitable for logic level gate drive sources.
  9. In what types of applications is the BUK9Y58-75B,115 typically used?
    It is typically used in automotive and industrial applications where high reliability and thermal performance are critical.
  10. What makes the BUK9Y58-75B,115 robust for thermally demanding environments?
    The device is designed for thermally demanding environments due to its +175°C junction temperature rating and efficient packaging.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):75 V
Current - Continuous Drain (Id) @ 25°C:20.73A (Tc)
Drive Voltage (Max Rds On, Min Rds On):5V, 10V
Rds On (Max) @ Id, Vgs:53mOhm @ 10A, 10V
Vgs(th) (Max) @ Id:2.15V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:10.7 nC @ 5 V
Vgs (Max):±15V
Input Capacitance (Ciss) (Max) @ Vds:1137 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):60.4W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:LFPAK56, Power-SO8
Package / Case:SC-100, SOT-669
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