BUK9Y4R4-40E,115
  • Share:

Nexperia USA Inc. BUK9Y4R4-40E,115

Manufacturer No:
BUK9Y4R4-40E,115
Manufacturer:
Nexperia USA Inc.
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 40V 100A LFPAK56
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BUK9Y4R4-40E,115 is a high-performance N-channel logic level MOSFET produced by Nexperia USA Inc. This device is part of Nexperia’s TrenchMOS technology family and is packaged in the LFPAK56 (Power-SO8) package. It is designed to offer low on-state resistance and high current handling capabilities, making it suitable for a wide range of applications, particularly in automotive and industrial sectors.

Key Specifications

Parameter Value Unit
Type Number BUK9Y4R4-40E -
Package LFPAK56; Power-SO8 (SOT669) -
Channel Type N-channel -
VDS [max] 40 V
RDSon [max] @ VGS = 10 V 3.7
RDSon [max] @ VGS = 5 V 4.4
Tj [max] 175 °C
ID [max] 100 A
Ptot [max] 147 W
QGD [typ] 8.7 nC
Qr [typ] 16.5 nC
VGSth [typ] 1.7 V
Automotive Qualified Yes -
Ciss [typ] 3058 pF
Coss [typ] 422 pF

Key Features

  • Low On-State Resistance: The BUK9Y4R4-40E,115 features a low RDSon of 3.7 mΩ at VGS = 10 V and 4.4 mΩ at VGS = 5 V, making it highly efficient for power switching applications.
  • High Current Handling: With a maximum continuous drain current (ID) of 100 A, this MOSFET is capable of handling high current loads.
  • Automotive Qualified: This device is qualified for automotive applications, ensuring reliability and performance in demanding environments.
  • TrenchMOS Technology: Utilizes Nexperia’s TrenchMOS technology for improved performance and efficiency.
  • LFPAK56 Package: The Power-SO8 package offers a compact footprint while maintaining high power handling capabilities.

Applications

  • Automotive Systems: Suitable for various automotive applications such as power steering, braking systems, and other high-power electronic control units.
  • Industrial Power Systems: Used in industrial power supplies, motor control, and other high-current switching applications.
  • Power Management: Ideal for power management in computing, consumer electronics, and mobile devices.
  • Renewable Energy Systems: Can be used in solar and wind power systems for efficient power conversion.

Q & A

  1. What is the maximum drain-source voltage (VDS) of the BUK9Y4R4-40E,115?

    The maximum drain-source voltage (VDS) is 40 V.

  2. What is the on-state resistance (RDSon) at VGS = 10 V?

    The on-state resistance (RDSon) at VGS = 10 V is 3.7 mΩ.

  3. What is the maximum continuous drain current (ID)?

    The maximum continuous drain current (ID) is 100 A.

  4. Is the BUK9Y4R4-40E,115 automotive qualified?

    Yes, the BUK9Y4R4-40E,115 is automotive qualified.

  5. What package type is used for the BUK9Y4R4-40E,115?

    The device is packaged in the LFPAK56 (Power-SO8) package.

  6. What is the maximum junction temperature (Tj)?

    The maximum junction temperature (Tj) is 175°C.

  7. What is the typical gate-source threshold voltage (VGSth)?

    The typical gate-source threshold voltage (VGSth) is 1.7 V.

  8. Is the BUK9Y4R4-40E,115 RoHS compliant?

    Yes, the BUK9Y4R4-40E,115 is RoHS3 compliant.

  9. What are the typical input capacitance (Ciss) and output capacitance (Coss) values?

    The typical input capacitance (Ciss) is 3058 pF and the typical output capacitance (Coss) is 422 pF.

  10. Where can I find detailed technical support and datasheets for the BUK9Y4R4-40E,115?

    Detailed technical support and datasheets can be found on Nexperia’s official website and through authorized distributors like Digi-Key.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):40 V
Current - Continuous Drain (Id) @ 25°C:100A (Tc)
Drive Voltage (Max Rds On, Min Rds On):5V
Rds On (Max) @ Id, Vgs:3.7mOhm @ 25A, 10V
Vgs(th) (Max) @ Id:2.1V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:26.8 nC @ 5 V
Vgs (Max):±10V
Input Capacitance (Ciss) (Max) @ Vds:4077 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):147W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:LFPAK56, Power-SO8
Package / Case:SC-100, SOT-669
0 Remaining View Similar

In Stock

$1.27
535

Please send RFQ , we will respond immediately.

Related Product By Categories

STL50NH3LL
STL50NH3LL
STMicroelectronics
MOSFET N-CH 30V 27A POWERFLAT
STF4N80K5
STF4N80K5
STMicroelectronics
MOSFET N-CH 800V 3A TO220FP
FDB12N50TM
FDB12N50TM
onsemi
MOSFET N-CH 500V 11.5A D2PAK
CSD17575Q3
CSD17575Q3
Texas Instruments
MOSFET N-CH 30V 60A 8VSON
FQD19N10LTM
FQD19N10LTM
onsemi
MOSFET N-CH 100V 15.6A DPAK
STD3N62K3
STD3N62K3
STMicroelectronics
MOSFET N-CH 620V 2.7A DPAK
BUK7240-100A,118
BUK7240-100A,118
Nexperia USA Inc.
MOSFET N-CH 100V 34A DPAK
IRF3710PBF
IRF3710PBF
Infineon Technologies
MOSFET N-CH 100V 57A TO220AB
STP8N120K5
STP8N120K5
STMicroelectronics
MOSFET N-CH 1200V 6A TO220
STF28N65M2
STF28N65M2
STMicroelectronics
MOSFET N-CH 650V 20A TO220FP
STW48NM60N
STW48NM60N
STMicroelectronics
MOSFET N-CH 600V 44A TO247
STS12NF30L
STS12NF30L
STMicroelectronics
MOSFET N-CH 30V 12A 8SO

Related Product By Brand

BAT854CW,115
BAT854CW,115
Nexperia USA Inc.
DIODE ARRAY SCHOTTKY 40V SOT323
BAT54S-QR
BAT54S-QR
Nexperia USA Inc.
TRANS PREBIAS NPN/PNP
MM3Z3V6T1GX
MM3Z3V6T1GX
Nexperia USA Inc.
VOLTAGE REGULATOR DIODES
PUMD10/ZLF
PUMD10/ZLF
Nexperia USA Inc.
TRANS PREBIAS
BC847CMB,315
BC847CMB,315
Nexperia USA Inc.
TRANS NPN 45V 0.1A DFN1006B-3
74LVC1G74GT-Q100X
74LVC1G74GT-Q100X
Nexperia USA Inc.
IC FF D-TYPE SNGL 1BIT 8XSON
74LVC1G79GW,165
74LVC1G79GW,165
Nexperia USA Inc.
IC FF D-TYPE SNGL 1BIT 5TSSOP
74AHC1G04GW-Q100H
74AHC1G04GW-Q100H
Nexperia USA Inc.
IC INVERTER 1CH 1-INP 5TSSOP
74HCT1G00GW,165
74HCT1G00GW,165
Nexperia USA Inc.
IC GATE NAND 1CH 2-INP 5TSSOP
74AHC1G04GV-Q100H
74AHC1G04GV-Q100H
Nexperia USA Inc.
IC INVERTER 1CH 1-INP SC74A
74AHC573D,118
74AHC573D,118
Nexperia USA Inc.
IC OCTAL D TRANSP LATCH 20SOIC
NXB0104GU12X
NXB0104GU12X
Nexperia USA Inc.
IC TXRX TRANSLATING XQFN12