Overview
The BUK9Y19-55B,115 is an N-channel TrenchMOS logic level Field-Effect Transistor (FET) produced by Nexperia USA Inc. This device is designed in a plastic package using TrenchMOS technology, which enhances its performance and efficiency. The BUK9Y19-55B is part of Nexperia’s extensive portfolio of MOSFETs, known for their high reliability and suitability for various applications across different industries, including automotive, industrial, power, computing, and consumer electronics.
Key Specifications
| Parameter | Value |
|---|---|
| Type number | BUK9Y19-55B |
| Package | LFPAK56; Power-SO8 (SOT669) |
| Channel type | N-channel |
| VDS [max] (V) | 55 |
| RDSon [max] @ VGS = 10 V (mΩ) | 17.3 |
| RDSon [max] @ VGS = 5 V (mΩ) | 19 |
| RDSon [max] @ VGS = 4.5 V; @25°C (mΩ) | 21 |
| Tj [max] (°C) | 175 |
| ID [max] (A) | 46 |
| QGD [typ] (nC) | 8 |
| Ptot [max] (W) | 85 |
| Qr [typ] (nC) | 38 |
| VGSth [typ] (V) | 1.5 |
| Automotive qualified | Yes (AEC-Q101) |
| Ciss [typ] (pF) | 1494 |
| Coss [typ] (pF) | 217 |
Key Features
- TrenchMOS Technology: Enhances performance and efficiency.
- Logic Level Operation: Compatible with logic level gate drive signals.
- High Current Capability: Maximum continuous drain current of 46 A.
- Low On-State Resistance: RDSon as low as 17.3 mΩ at VGS = 10 V.
- High Temperature Operation: Maximum junction temperature of 175°C.
- Automotive Qualified: Meets AEC-Q101 standards for automotive applications.
- Surface Mount Package: LFPAK56; Power-SO8 (SOT669) package for easy integration.
Applications
- Automotive Systems: Suitable for various automotive applications due to its AEC-Q101 qualification.
- Industrial Power Systems: Used in power supplies, motor control, and other industrial power management systems.
- Consumer Electronics: Found in power management circuits of consumer electronics such as laptops, smartphones, and other portable devices.
- Power Computing: Used in power supplies and power management units for computing systems.
- Wearables and Mobile Devices: Suitable for power management in wearables and mobile devices due to its compact package and high efficiency.
Q & A
- What is the maximum drain-source voltage (VDS) of the BUK9Y19-55B?
The maximum drain-source voltage (VDS) is 55 V.
- What is the typical gate-source threshold voltage (VGSth) of this MOSFET?
The typical gate-source threshold voltage (VGSth) is 1.5 V.
- What is the maximum continuous drain current (ID) of the BUK9Y19-55B?
The maximum continuous drain current (ID) is 46 A.
- What is the package type of the BUK9Y19-55B?
The package type is LFPAK56; Power-SO8 (SOT669).
- Is the BUK9Y19-55B qualified for automotive applications?
Yes, it is qualified to AEC-Q101 standards for automotive applications.
- What is the maximum junction temperature (Tj) of this MOSFET?
The maximum junction temperature (Tj) is 175°C.
- What is the typical input capacitance (Ciss) of the BUK9Y19-55B?
The typical input capacitance (Ciss) is 1494 pF.
- What is the power dissipation (Ptot) of this MOSFET?
The maximum power dissipation (Ptot) is 85 W.
- Is the BUK9Y19-55B RoHS compliant?
Yes, it is RoHS compliant.
- What is the typical gate charge (QGD) of the BUK9Y19-55B?
The typical gate charge (QGD) is 8 nC.
