BUK9629-100B,118
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Nexperia USA Inc. BUK9629-100B,118

Manufacturer No:
BUK9629-100B,118
Manufacturer:
Nexperia USA Inc.
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 100V 46A D2PAK
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BUK9629-100B,118 is a logic level N-channel enhancement mode Field-Effect Transistor (FET) produced by Nexperia USA Inc. This transistor utilizes TrenchMOS technology and is packaged in a plastic D2PAK package. It is designed for high-performance applications requiring low on-state resistance and fast switching times. However, it is important to note that this product is no longer manufactured and will no longer be stocked once the current inventory is depleted.

Key Specifications

ParameterValue
Package TypeD2PAK
Channel TypeN-Channel
Mode of OperationEnhancement Mode
Drain-Source Voltage (Vds)100 V
Drain Current (Id)100 A
Gate-Source Voltage (Vgs)±20 V
On-State Resistance (Rds(on))Typically 1.5 mΩ at Vgs = 10 V, Id = 50 A
Operating Temperature (Tj)-55°C to 175°C
RoHS StatusROHS3 Compliant

Key Features

  • Low on-state resistance (Rds(on)) for reduced power losses.
  • Fast switching times for high-frequency applications.
  • TrenchMOS technology for improved performance and reliability.
  • Logic level gate drive for easy integration with microcontrollers and other logic circuits.
  • D2PAK package for good thermal performance and mechanical robustness.

Applications

The BUK9629-100B,118 is suitable for a variety of high-power applications, including:

  • Power supplies and DC-DC converters.
  • Motor control and drive systems.
  • Automotive systems, such as battery management and power distribution.
  • Industrial control systems, including power inverters and switch-mode power supplies.
  • Consumer electronics requiring high current and low voltage drop.

Q & A

  1. What is the BUK9629-100B,118?
    The BUK9629-100B,118 is a logic level N-channel enhancement mode Field-Effect Transistor (FET) produced by Nexperia USA Inc.
  2. What package type does the BUK9629-100B,118 use?
    The BUK9629-100B,118 is packaged in a D2PAK package.
  3. What are the drain-source voltage and drain current ratings of the BUK9629-100B,118?
    The drain-source voltage (Vds) is 100 V, and the drain current (Id) is 100 A.
  4. What is the typical on-state resistance (Rds(on)) of the BUK9629-100B,118?
    The typical on-state resistance (Rds(on)) is 1.5 mΩ at Vgs = 10 V, Id = 50 A.
  5. What is the operating temperature range of the BUK9629-100B,118?
    The operating temperature range is -55°C to 175°C.
  6. Is the BUK9629-100B,118 ROHS compliant?
    Yes, the BUK9629-100B,118 is ROHS3 compliant.
  7. What technology does the BUK9629-100B,118 use?
    The BUK9629-100B,118 uses TrenchMOS technology.
  8. Why is the BUK9629-100B,118 no longer available for purchase?
    The BUK9629-100B,118 is no longer manufactured and will no longer be stocked once the current inventory is depleted.
  9. What are some common applications for the BUK9629-100B,118?
    Common applications include power supplies, motor control, automotive systems, industrial control systems, and consumer electronics requiring high current and low voltage drop.
  10. What is the gate-source voltage (Vgs) rating of the BUK9629-100B,118?
    The gate-source voltage (Vgs) rating is ±20 V.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):100 V
Current - Continuous Drain (Id) @ 25°C:46A (Tc)
Drive Voltage (Max Rds On, Min Rds On):5V, 10V
Rds On (Max) @ Id, Vgs:27mOhm @ 25A, 10V
Vgs(th) (Max) @ Id:2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:33 nC @ 5 V
Vgs (Max):±15V
Input Capacitance (Ciss) (Max) @ Vds:4360 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):157W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:D2PAK
Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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In Stock

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Similar Products

Part Number BUK9629-100B,118 BUK9620-100B,118
Manufacturer Nexperia USA Inc. Nexperia USA Inc.
Product Status Active Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V 100 V
Current - Continuous Drain (Id) @ 25°C 46A (Tc) 63A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 5V, 10V 4.5V, 10V
Rds On (Max) @ Id, Vgs 27mOhm @ 25A, 10V 18.5mOhm @ 25A, 10V
Vgs(th) (Max) @ Id 2V @ 1mA 2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 33 nC @ 5 V 53.4 nC @ 5 V
Vgs (Max) ±15V ±15V
Input Capacitance (Ciss) (Max) @ Vds 4360 pF @ 25 V 5657 pF @ 25 V
FET Feature - -
Power Dissipation (Max) 157W (Tc) 203W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package D2PAK D2PAK
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

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