BUK92150-55A,118
  • Share:

Nexperia USA Inc. BUK92150-55A,118

Manufacturer No:
BUK92150-55A,118
Manufacturer:
Nexperia USA Inc.
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 55V 11A DPAK
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BUK92150-55A,118 is a logic level N-channel enhancement mode Field-Effect Transistor (FET) produced by Nexperia USA Inc. This MOSFET utilizes TrenchMOS technology and is packaged in a DPAK (SOT428) package. It is designed and qualified to the AEC-Q101 standard, making it suitable for automotive critical applications. The device is known for its low conduction losses, high thermal rating, and compatibility with logic level gate drive sources.

Key Specifications

Parameter Value Unit
Type number BUK92150-55A -
Package version SOT428 -
Package name DPAK -
Product status End of life -
Channel type N -
Number of transistors 1 -
V DS [max] 55 V
R DSon [max] @ V GS = 10 V 125
R DSon [max] @ V GS = 5 V 140
R DSon [max] @ V GS = 4.5 V; @25 C 155
T j [max] 175 °C
I D [max] 11 A
Q GD [typ] 2.6 nC
P tot [max] 36 W
Q r [typ] 26 nC
V GSth [typ] 1.5 V
Automotive qualified Yes -
C iss [typ] 240 pF
C oss [typ] 50 pF

Key Features

  • Low conduction losses due to low on-state resistance
  • AEC-Q101 compliant, suitable for automotive critical applications
  • Suitable for logic level gate drive sources
  • Suitable for thermally demanding environments due to 175 °C rating
  • RoHS compliant, meeting strict environmental regulations

Applications

  • 12 V and 24 V loads
  • Automotive and general purpose power switching
  • Motors, lamps, and solenoids

Q & A

  1. What is the maximum drain-source voltage (V DS) of the BUK92150-55A,118?

    The maximum drain-source voltage (V DS) is 55 V.

  2. What is the maximum continuous drain current (I D) at 25°C?

    The maximum continuous drain current (I D) at 25°C is 11 A.

  3. What is the on-state resistance (R DSon) at V GS = 10 V?

    The on-state resistance (R DSon) at V GS = 10 V is 125 mΩ.

  4. Is the BUK92150-55A,118 AEC-Q101 compliant?

    Yes, the BUK92150-55A,118 is AEC-Q101 compliant.

  5. What is the maximum junction temperature (T j) of the device?

    The maximum junction temperature (T j) is 175 °C.

  6. What is the typical gate-source threshold voltage (V GSth)?

    The typical gate-source threshold voltage (V GSth) is 1.5 V.

  7. What are the typical input and output capacitances (C iss and C oss)?

    The typical input capacitance (C iss) is 240 pF, and the typical output capacitance (C oss) is 50 pF.

  8. Is the BUK92150-55A,118 RoHS compliant?

    Yes, the BUK92150-55A,118 is RoHS compliant.

  9. What are the common applications of the BUK92150-55A,118?

  10. What is the package type of the BUK92150-55A,118?

    The package type is DPAK (SOT428).

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):55 V
Current - Continuous Drain (Id) @ 25°C:11A (Tc)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:125mOhm @ 5A, 10V
Vgs(th) (Max) @ Id:2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:6 nC @ 5 V
Vgs (Max):±15V
Input Capacitance (Ciss) (Max) @ Vds:338 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):36W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:DPAK
Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
0 Remaining View Similar

In Stock

-
378

Please send RFQ , we will respond immediately.

Similar Products

Part Number BUK92150-55A,118 BUK9215-55A,118
Manufacturer Nexperia USA Inc. Nexperia USA Inc.
Product Status Obsolete Obsolete
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 55 V 55 V
Current - Continuous Drain (Id) @ 25°C 11A (Tc) 55A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V 4.5V, 10V
Rds On (Max) @ Id, Vgs 125mOhm @ 5A, 10V 13.6mOhm @ 25A, 10V
Vgs(th) (Max) @ Id 2V @ 1mA 2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 6 nC @ 5 V 48 nC @ 5 V
Vgs (Max) ±15V ±15V
Input Capacitance (Ciss) (Max) @ Vds 338 pF @ 25 V 2916 pF @ 25 V
FET Feature - -
Power Dissipation (Max) 36W (Tc) 115W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package DPAK DPAK
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63

Related Product By Categories

PHD71NQ03LT,118
PHD71NQ03LT,118
NXP USA Inc.
TRANSISTOR >30MHZ
STL50NH3LL
STL50NH3LL
STMicroelectronics
MOSFET N-CH 30V 27A POWERFLAT
2N7002W
2N7002W
Diotec Semiconductor
MOSFET, SOT-323, 60V, 0.115A, N,
BSS84PH6327XTSA2
BSS84PH6327XTSA2
Infineon Technologies
MOSFET P-CH 60V 170MA SOT23-3
PSMN1R0-40YLDX
PSMN1R0-40YLDX
Nexperia USA Inc.
MOSFET N-CH 40V 280A LFPAK56
FDBL86063-F085
FDBL86063-F085
onsemi
MOSFET N-CH 100V 240A 8HPSOF
STD7ANM60N
STD7ANM60N
STMicroelectronics
MOSFET N-CH 600V 5A DPAK
STD60NF06T4
STD60NF06T4
STMicroelectronics
MOSFET N-CH 60V 60A DPAK
STP4NK80ZFP
STP4NK80ZFP
STMicroelectronics
MOSFET N-CH 800V 3A TO220FP
STW48NM60N
STW48NM60N
STMicroelectronics
MOSFET N-CH 600V 44A TO247
BUK9880-55A,115
BUK9880-55A,115
NXP USA Inc.
MOSFET N-CH 55V 7A SOT223
BSS138-F169
BSS138-F169
onsemi
MOSFET N-CH SOT23

Related Product By Brand

PESD2CANFD27V-QBZ
PESD2CANFD27V-QBZ
Nexperia USA Inc.
TVS DIODE 27VWM 44VC DFN1110D-3
PDZ3.3B,115
PDZ3.3B,115
Nexperia USA Inc.
DIODE ZENER 3.3V 400MW SOD323
BZX384-B10,115
BZX384-B10,115
Nexperia USA Inc.
DIODE ZENER 10V 300MW SOD323
PDZ10B-QX
PDZ10B-QX
Nexperia USA Inc.
TRANS PREBIAS NPN/PNP
BCP52-10TF
BCP52-10TF
Nexperia USA Inc.
BCP52-10T/SOT223/SC-73
BC857CQBZ
BC857CQBZ
Nexperia USA Inc.
TRANS 45V 0.1A DFN1110D-3
PMZ600UNEYL
PMZ600UNEYL
Nexperia USA Inc.
MOSFET N-CH 20V 600MA DFN1006-3
74ABT16245BDGG,112
74ABT16245BDGG,112
Nexperia USA Inc.
IC TXRX NON-INVERT 5.5V 48TSSOP
74LVC1G125GV-Q100,
74LVC1G125GV-Q100,
Nexperia USA Inc.
IC BUFFER NON-INVERT 5.5V SC74A
74AHCT1G04GW-Q100H
74AHCT1G04GW-Q100H
Nexperia USA Inc.
IC INVERTER 1CH 1-INP 5TSSOP
74HC1G00GW-Q100H
74HC1G00GW-Q100H
Nexperia USA Inc.
IC GATE NAND 1CH 2-INP 5TSSOP
74LVC1G11GW,125
74LVC1G11GW,125
Nexperia USA Inc.
IC GATE AND 1CH 3-INP 6TSSOP