Overview
The BUK7Y1R4-40HX is a high-performance N-channel MOSFET produced by Nexperia USA Inc. This device is part of Nexperia's advanced Trench technology series, specifically utilizing the Trench 9 low ohmic superjunction technology. It is housed in a robust LFPAK56 package, which is known for its high board level reliability and ease of soldering. The MOSFET is designed to meet the stringent requirements of automotive and industrial applications, ensuring high performance and endurance in thermally demanding environments.
Key Specifications
| Parameter | Value |
|---|---|
| Vds - Drain-Source Breakdown Voltage | 40 V |
| Id - Continuous Drain Current | 190 A |
| Rds On - Drain-Source Resistance | 1.4 mΩ |
| Vgs - Gate-Source Threshold Voltage | Typically 3 V |
| Tj - Maximum Junction Temperature | 175 °C |
| Ptot - Total Power Dissipation | 395 W (at Tc) |
| Package | LFPAK56 (SOT669) |
| Automotive Qualified | Yes, AEC-Q101 compliant |
Key Features
- Advanced Trench 9 Technology: Utilizes low ohmic superjunction technology for enhanced power density and efficiency.
- High Performance: Offers a low Rds On of 1.4 mΩ and high continuous drain current of 190 A.
- Robust Packaging: Housed in the LFPAK56 package, which provides high board level reliability and easy soldering.
- Thermal Endurance: Rated for up to 175 °C, making it suitable for thermally demanding environments.
- Improved SOA and Avalanche Capability: Enhanced safe operating area and avalanche ruggedness compared to standard TrenchMOS devices.
- Easy Paralleling: Tight Vgs(th) limits enable easy paralleling of MOSFETs for higher current applications.
Applications
- Automotive Systems: Suitable for 12 V automotive systems, including motors, lamps, and solenoid control.
- Start-Stop Micro-Hybrid Applications: Ideal for start-stop micro-hybrid systems due to its high performance and endurance.
- Transmission Control: Used in transmission control systems requiring high reliability and efficiency.
- Ultra High Performance Power Switching: Applicable in various high-performance power switching applications.
Q & A
- What is the maximum drain-source breakdown voltage of the BUK7Y1R4-40HX?
The maximum drain-source breakdown voltage is 40 V.
- What is the continuous drain current rating of the BUK7Y1R4-40HX?
The continuous drain current rating is 190 A.
- What is the typical drain-source resistance (Rds On) of the BUK7Y1R4-40HX?
The typical drain-source resistance (Rds On) is 1.4 mΩ.
- What is the maximum junction temperature rating of the BUK7Y1R4-40HX?
The maximum junction temperature rating is 175 °C.
- Is the BUK7Y1R4-40HX automotive qualified?
Yes, it is AEC-Q101 compliant.
- What package type is the BUK7Y1R4-40HX housed in?
The BUK7Y1R4-40HX is housed in the LFPAK56 (SOT669) package.
- What are some of the key features of the BUK7Y1R4-40HX?
Key features include advanced Trench 9 technology, high performance, robust packaging, and improved SOA and avalanche capability.
- In what types of applications is the BUK7Y1R4-40HX commonly used?
Common applications include 12 V automotive systems, start-stop micro-hybrid applications, transmission control, and ultra high performance power switching.
- How does the LFPAK56 package contribute to the reliability of the BUK7Y1R4-40HX?
The LFPAK56 package provides high board level reliability, absorbs mechanical stress during thermal cycling, and offers easy solder wetting for good mechanical solder joints.
- Can the BUK7Y1R4-40HX be easily paralleled with other MOSFETs?
Yes, the tight Vgs(th) limits enable easy paralleling of MOSFETs for higher current applications.
