BUK7J1R4-40HX
  • Share:

Nexperia USA Inc. BUK7J1R4-40HX

Manufacturer No:
BUK7J1R4-40HX
Manufacturer:
Nexperia USA Inc.
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 40V 190A LFPAK56
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BUK7J1R4-40HX is a high-performance N-channel MOSFET produced by Nexperia USA Inc. This device utilizes the latest Trench 9 low ohmic superjunction technology, which enhances its electrical characteristics and efficiency. Housed in the enhanced LFPAK56E package, this MOSFET is designed to meet the stringent requirements of automotive and industrial applications.

Key Specifications

ParameterValue
VDS (Drain-Source Voltage)40 V
RDS(on) (Drain-Source On Resistance)1.4 mΩ
ID (Continuous Drain Current)190 A
Ptot (Total Power Dissipation)Dependent on package and thermal conditions
Tj (Junction Temperature)-55°C to 175°C
PackageLFPAK56E

Key Features

  • Automotive qualified (AEC-Q101)
  • Low on-resistance (RDS(on)) of 1.4 mΩ
  • High continuous drain current (ID) of 190 A
  • Enhanced LFPAK56E package for improved thermal performance
  • Trench 9 low ohmic superjunction technology for high efficiency

Applications

  • Automotive systems (e.g., electric power steering, battery management)
  • Industrial power supplies and motor control
  • High-power DC-DC converters
  • Electric vehicle charging systems

Q & A

  1. What is the maximum drain-source voltage of the BUK7J1R4-40HX?
    The maximum drain-source voltage is 40 V.
  2. What is the on-resistance of the BUK7J1R4-40HX?
    The on-resistance (RDS(on)) is 1.4 mΩ.
  3. What is the continuous drain current rating of the BUK7J1R4-40HX?
    The continuous drain current (ID) is 190 A.
  4. What package is the BUK7J1R4-40HX housed in?
    The device is housed in the enhanced LFPAK56E package.
  5. Is the BUK7J1R4-40HX automotive qualified?
    Yes, it is qualified to AEC-Q101 standards.
  6. What technology is used in the BUK7J1R4-40HX?
    The device uses Trench 9 low ohmic superjunction technology.
  7. What are some typical applications of the BUK7J1R4-40HX?
    Typical applications include automotive systems, industrial power supplies, high-power DC-DC converters, and electric vehicle charging systems.
  8. What is the junction temperature range of the BUK7J1R4-40HX?
    The junction temperature range is -55°C to 175°C.
  9. Where can I find detailed specifications for the BUK7J1R4-40HX?
    Detailed specifications can be found in the datasheet available on Nexperia's official website or through authorized distributors like Digi-Key and Farnell.
  10. What is the total power dissipation of the BUK7J1R4-40HX?
    The total power dissipation (Ptot) is dependent on the package and thermal conditions.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):40 V
Current - Continuous Drain (Id) @ 25°C:120A (Ta)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:1.4mOhm @ 25A, 10V
Vgs(th) (Max) @ Id:3.6V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:126 nC @ 10 V
Vgs (Max):+20V, -10V
Input Capacitance (Ciss) (Max) @ Vds:8155 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):395W (Ta)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:LFPAK56; Power-SO8
Package / Case:SOT-1023, 4-LFPAK
0 Remaining View Similar

In Stock

$3.26
129

Please send RFQ , we will respond immediately.

Related Product By Categories

BSC040N10NS5ATMA1
BSC040N10NS5ATMA1
Infineon Technologies
MOSFET N-CH 100V 100A TDSON
BSS84AKM,315
BSS84AKM,315
Nexperia USA Inc.
MOSFET P-CH 50V 230MA DFN1006-3
IPW65R080CFDAFKSA1
IPW65R080CFDAFKSA1
Infineon Technologies
MOSFET N-CH 650V 43.3A TO247-3
FQD7P06TM
FQD7P06TM
onsemi
MOSFET P-CH 60V 5.4A DPAK
STN1NK80Z
STN1NK80Z
STMicroelectronics
MOSFET N-CH 800V 250MA SOT223
FCH040N65S3-F155
FCH040N65S3-F155
onsemi
MOSFET N-CH 650V 65A TO247-3
BUK9M24-40EX
BUK9M24-40EX
Nexperia USA Inc.
MOSFET N-CH 40V 30A LFPAK33
CSD18511Q5A
CSD18511Q5A
Texas Instruments
MOSFET N-CH 40V 159A 8VSON
PMPB15XP
PMPB15XP
Nexperia USA Inc.
PMPB15XP - 12 V, SINGLE P-CHANNE
PHP9NQ20T,127
PHP9NQ20T,127
Nexperia USA Inc.
MOSFET N-CH 200V 8.7A TO220AB
MTB30P06VT4G
MTB30P06VT4G
onsemi
MOSFET P-CH 60V 30A D2PAK
STW6N120K3
STW6N120K3
STMicroelectronics
MOSFET N-CH 1200V 6A TO247

Related Product By Brand

BZX79-C5V6,133
BZX79-C5V6,133
Nexperia USA Inc.
DIODE ZENER 5.6V 400MW ALF2
BZX84-C36,235
BZX84-C36,235
Nexperia USA Inc.
DIODE ZENER 36V 250MW TO236AB
PDZ3.9BGWX
PDZ3.9BGWX
Nexperia USA Inc.
DIODE ZENER 3.9V 365MW SOD123
PDZ6.2B,115
PDZ6.2B,115
Nexperia USA Inc.
DIODE ZENER 6.2V 400MW SOD323
PBSS4160TVL
PBSS4160TVL
Nexperia USA Inc.
TRANS NPN 60V 1A TO236AB
PDTC144WU,115
PDTC144WU,115
Nexperia USA Inc.
TRANS PREBIAS NPN 50V SOT323
74HC4050D,652
74HC4050D,652
Nexperia USA Inc.
IC BUFFER NON-INVERT 6V 16SO
74LVCH8T245BQ118
74LVCH8T245BQ118
Nexperia USA Inc.
IC TRANSLATR TXRX 5.5V 24DHVQFN
74LVC1G80GV-Q100,1
74LVC1G80GV-Q100,1
Nexperia USA Inc.
IC FF D-TYPE SNGL 1BIT SC74A
74AHCT1G04GW-Q100H
74AHCT1G04GW-Q100H
Nexperia USA Inc.
IC INVERTER 1CH 1-INP 5TSSOP
74HC1G00GW-Q100H
74HC1G00GW-Q100H
Nexperia USA Inc.
IC GATE NAND 1CH 2-INP 5TSSOP
74HCT373PW,112
74HCT373PW,112
Nexperia USA Inc.
IC OCTAL D TRANSP LATCH 20TSSOP