BUK7J1R4-40HX
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Nexperia USA Inc. BUK7J1R4-40HX

Manufacturer No:
BUK7J1R4-40HX
Manufacturer:
Nexperia USA Inc.
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 40V 190A LFPAK56
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BUK7J1R4-40HX is a high-performance N-channel MOSFET produced by Nexperia USA Inc. This device utilizes the latest Trench 9 low ohmic superjunction technology, which enhances its electrical characteristics and efficiency. Housed in the enhanced LFPAK56E package, this MOSFET is designed to meet the stringent requirements of automotive and industrial applications.

Key Specifications

ParameterValue
VDS (Drain-Source Voltage)40 V
RDS(on) (Drain-Source On Resistance)1.4 mΩ
ID (Continuous Drain Current)190 A
Ptot (Total Power Dissipation)Dependent on package and thermal conditions
Tj (Junction Temperature)-55°C to 175°C
PackageLFPAK56E

Key Features

  • Automotive qualified (AEC-Q101)
  • Low on-resistance (RDS(on)) of 1.4 mΩ
  • High continuous drain current (ID) of 190 A
  • Enhanced LFPAK56E package for improved thermal performance
  • Trench 9 low ohmic superjunction technology for high efficiency

Applications

  • Automotive systems (e.g., electric power steering, battery management)
  • Industrial power supplies and motor control
  • High-power DC-DC converters
  • Electric vehicle charging systems

Q & A

  1. What is the maximum drain-source voltage of the BUK7J1R4-40HX?
    The maximum drain-source voltage is 40 V.
  2. What is the on-resistance of the BUK7J1R4-40HX?
    The on-resistance (RDS(on)) is 1.4 mΩ.
  3. What is the continuous drain current rating of the BUK7J1R4-40HX?
    The continuous drain current (ID) is 190 A.
  4. What package is the BUK7J1R4-40HX housed in?
    The device is housed in the enhanced LFPAK56E package.
  5. Is the BUK7J1R4-40HX automotive qualified?
    Yes, it is qualified to AEC-Q101 standards.
  6. What technology is used in the BUK7J1R4-40HX?
    The device uses Trench 9 low ohmic superjunction technology.
  7. What are some typical applications of the BUK7J1R4-40HX?
    Typical applications include automotive systems, industrial power supplies, high-power DC-DC converters, and electric vehicle charging systems.
  8. What is the junction temperature range of the BUK7J1R4-40HX?
    The junction temperature range is -55°C to 175°C.
  9. Where can I find detailed specifications for the BUK7J1R4-40HX?
    Detailed specifications can be found in the datasheet available on Nexperia's official website or through authorized distributors like Digi-Key and Farnell.
  10. What is the total power dissipation of the BUK7J1R4-40HX?
    The total power dissipation (Ptot) is dependent on the package and thermal conditions.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):40 V
Current - Continuous Drain (Id) @ 25°C:120A (Ta)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:1.4mOhm @ 25A, 10V
Vgs(th) (Max) @ Id:3.6V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:126 nC @ 10 V
Vgs (Max):+20V, -10V
Input Capacitance (Ciss) (Max) @ Vds:8155 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):395W (Ta)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:LFPAK56; Power-SO8
Package / Case:SOT-1023, 4-LFPAK
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