BUK764R0-40E,118
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Nexperia USA Inc. BUK764R0-40E,118

Manufacturer No:
BUK764R0-40E,118
Manufacturer:
Nexperia USA Inc.
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 40V 75A D2PAK
Delivery:
Payment:
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Product Introduction

Overview

The BUK764R0-40E,118 is a high-performance N-Channel MOSFET produced by Nexperia USA Inc. This device is part of Nexperia's TrenchMOS™ family, known for its advanced technology and reliability. The MOSFET is packaged in a D2PAK (TO-263AB) surface mount configuration, making it suitable for a variety of high-power applications.

Key Specifications

ParameterValue
Channel TypeN-Channel
Drain to Source Voltage (Vdss)40 V
Continuous Drain Current (Id) @ 25°C75 A (Tc)
Power Dissipation (Pd) @ Tc182 W (Tc)
On-State Resistance (Rds On) @ Id, Vgs4 mΩ @ 25 A, 10 V
Gate Threshold Voltage (Vgs(th)) @ Id4 V @ 1 mA
Gate Voltage (Vgs)±20 V
Operating Temperature (TJ)-55°C to 175°C
Package TypeD2PAK (TO-263AB)
Mounting TypeSurface Mount

Key Features

  • High current capability of 75 A (Tc)
  • Low on-state resistance of 4 mΩ @ 25 A, 10 V
  • High power dissipation of 182 W (Tc)
  • AEC-Q101 qualified for automotive applications
  • TrenchMOS™ technology for enhanced performance and reliability
  • Surface mount D2PAK package for easy integration

Applications

The BUK764R0-40E,118 MOSFET is suitable for a wide range of high-power applications, including:

  • Automotive systems (e.g., power steering, fuel pumps, and electric vehicles)
  • Industrial power supplies and motor control
  • Renewable energy systems (e.g., solar and wind power)
  • High-efficiency DC-DC converters
  • Power management in consumer electronics

Q & A

  1. What is the maximum drain to source voltage of the BUK764R0-40E,118 MOSFET?
    The maximum drain to source voltage is 40 V.
  2. What is the continuous drain current rating of this MOSFET at 25°C?
    The continuous drain current rating is 75 A (Tc).
  3. What is the on-state resistance of the BUK764R0-40E,118 MOSFET?
    The on-state resistance is 4 mΩ @ 25 A, 10 V.
  4. Is the BUK764R0-40E,118 AEC-Q101 qualified?
    Yes, it is AEC-Q101 qualified for automotive applications.
  5. What is the operating temperature range of this MOSFET?
    The operating temperature range is -55°C to 175°C.
  6. What package type is used for the BUK764R0-40E,118 MOSFET?
    The package type is D2PAK (TO-263AB).
  7. What is the gate threshold voltage of this MOSFET?
    The gate threshold voltage is 4 V @ 1 mA.
  8. What are some typical applications for the BUK764R0-40E,118 MOSFET?
    Typical applications include automotive systems, industrial power supplies, renewable energy systems, high-efficiency DC-DC converters, and power management in consumer electronics.
  9. What technology is used in the BUK764R0-40E,118 MOSFET?
    The MOSFET uses TrenchMOS™ technology.
  10. How much power can the BUK764R0-40E,118 MOSFET dissipate?
    The power dissipation is 182 W (Tc).

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):40 V
Current - Continuous Drain (Id) @ 25°C:75A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:4mOhm @ 25A, 10V
Vgs(th) (Max) @ Id:4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:54 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:4405 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):182W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:D2PAK
Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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Similar Products

Part Number BUK764R0-40E,118 BUK762R0-40E,118
Manufacturer Nexperia USA Inc. Nexperia USA Inc.
Product Status Active Obsolete
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 40 V 40 V
Current - Continuous Drain (Id) @ 25°C 75A (Tc) 120A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V
Rds On (Max) @ Id, Vgs 4mOhm @ 25A, 10V 2mOhm @ 25A, 10V
Vgs(th) (Max) @ Id 4V @ 1mA 4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 54 nC @ 10 V 109.2 nC @ 10 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 4405 pF @ 25 V 8500 pF @ 25 V
FET Feature - -
Power Dissipation (Max) 182W (Tc) 293W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package D2PAK D2PAK
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

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