BUK7635-55A,118
  • Share:

Nexperia USA Inc. BUK7635-55A,118

Manufacturer No:
BUK7635-55A,118
Manufacturer:
Nexperia USA Inc.
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 55V 35A D2PAK
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BUK7635-55A,118 is a standard level N-channel enhancement mode Field-Effect Transistor (FET) manufactured by Nexperia USA Inc. This device utilizes TrenchMOS technology and is packaged in a plastic D2PAK (TO-263-3) package. It is designed and qualified to the AEC-Q101 standard, making it suitable for automotive and other critical applications. The BUK7635-55A,118 is known for its low conduction losses and high thermal rating, making it ideal for thermally demanding environments.

Key Specifications

ParameterValue
Type numberBUK7635-55A
Package nameD2PAK (SOT404)
Channel typeN-Channel
VDS [max]55 V
RDSon [max] @ VGS = 10 V35 mΩ
Tj [max]175 °C
ID [max]35 A
Ptot [max]85 W
VGSth [typ]3 V
Ciss [typ]650 pF
Coss [typ]170 pF
Automotive qualifiedYes (AEC-Q101)

Key Features

  • AEC-Q101 compliant, ensuring reliability in automotive and critical applications.
  • Low conduction losses due to low on-state resistance (RDSon = 35 mΩ @ VGS = 10 V).
  • Suitable for standard level gate drive sources.
  • High thermal rating (Tj [max] = 175 °C), making it suitable for thermally demanding environments.

Applications

  • 12 V and 24 V loads.
  • Automotive and general purpose power switching.
  • Motors, lamps, and solenoids.

Q & A

  1. What is the maximum drain-source voltage (VDS) of the BUK7635-55A,118? The maximum drain-source voltage is 55 V.
  2. What is the maximum continuous drain current (ID) of this MOSFET? The maximum continuous drain current is 35 A.
  3. What is the package type of the BUK7635-55A,118? The package type is D2PAK (TO-263-3).
  4. Is the BUK7635-55A,118 AEC-Q101 compliant? Yes, it is AEC-Q101 compliant.
  5. What is the maximum junction temperature (Tj) of this device? The maximum junction temperature is 175 °C.
  6. What is the typical threshold voltage (VGSth) of the BUK7635-55A,118? The typical threshold voltage is 3 V.
  7. What are the typical input and output capacitances (Ciss and Coss)? The typical input capacitance (Ciss) is 650 pF, and the typical output capacitance (Coss) is 170 pF.
  8. What are some common applications of the BUK7635-55A,118? Common applications include 12 V and 24 V loads, automotive and general purpose power switching, and motors, lamps, and solenoids.
  9. What is the maximum power dissipation (Ptot) of this MOSFET? The maximum power dissipation is 85 W.
  10. Is the BUK7635-55A,118 lead-free and RoHS compliant? Yes, it is lead-free and RoHS compliant.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):55 V
Current - Continuous Drain (Id) @ 25°C:35A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:35mOhm @ 20A, 10V
Vgs(th) (Max) @ Id:4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:- 
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:872 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):85W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:D2PAK
Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
0 Remaining View Similar

In Stock

$1.26
746

Please send RFQ , we will respond immediately.

Similar Products

Part Number BUK7635-55A,118 BUK7675-55A,118
Manufacturer Nexperia USA Inc. NXP Semiconductors
Product Status Obsolete Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 55 V 55 V
Current - Continuous Drain (Id) @ 25°C 35A (Tc) 20.3A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V
Rds On (Max) @ Id, Vgs 35mOhm @ 20A, 10V 75mOhm @ 10A, 10V
Vgs(th) (Max) @ Id 4V @ 1mA 4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs - -
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 872 pF @ 25 V 483 pF @ 25 V
FET Feature - -
Power Dissipation (Max) 85W (Tc) 62W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package D2PAK D2PAK
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

Related Product By Categories

PSMN3R0-60PS,127
PSMN3R0-60PS,127
Nexperia USA Inc.
MOSFET N-CH 60V 100A TO220AB
STP20NM50
STP20NM50
STMicroelectronics
MOSFET N-CH 500V 20A TO220AB
FDMT80040DC
FDMT80040DC
onsemi
MOSFET N-CH 40V 420A 8PQFN
FDY102PZ
FDY102PZ
onsemi
MOSFET P-CH 20V 830MA SC89-3
CSD17581Q5AT
CSD17581Q5AT
Texas Instruments
MOSFET N-CH 30V 24A/123A 8VSON
FDD86250-F085
FDD86250-F085
onsemi
MOSFET N-CH 150V 50A TO252
FCPF1300N80Z
FCPF1300N80Z
onsemi
MOSFET N-CH 800V 4A TO220F
STD5N52K3
STD5N52K3
STMicroelectronics
MOSFET N-CH 525V 4.4A DPAK
STF9N60M2
STF9N60M2
STMicroelectronics
MOSFET N-CH 600V 5.5A TO220FP
BSS84-7
BSS84-7
Diodes Incorporated
MOSFET P-CH 50V 130MA SOT23-3
NX3008NBKT,115
NX3008NBKT,115
NXP USA Inc.
MOSFET N-CH 30V 350MA SC75
NVMFS6B25NLT1G
NVMFS6B25NLT1G
onsemi
MOSFET N-CH 100V 8A/33A 5DFN

Related Product By Brand

BAT854CW,115
BAT854CW,115
Nexperia USA Inc.
DIODE ARRAY SCHOTTKY 40V SOT323
BAS40-07,215
BAS40-07,215
Nexperia USA Inc.
DIODE ARRAY SCHOTTKY 40V SOT143B
BAT54S-QR
BAT54S-QR
Nexperia USA Inc.
TRANS PREBIAS NPN/PNP
PMEG2010BEA,115
PMEG2010BEA,115
Nexperia USA Inc.
DIODE SCHOTTKY 20V 1A SOD323
BZX84J-B8V2,115
BZX84J-B8V2,115
Nexperia USA Inc.
DIODE ZENER 8.2V 550MW SOD323F
PBSS5350X,135
PBSS5350X,135
Nexperia USA Inc.
TRANS PNP 50V 3A SOT89
BUK7Y12-40EX
BUK7Y12-40EX
Nexperia USA Inc.
MOSFET N-CH 40V 52A LFPAK56
PHP9NQ20T,127
PHP9NQ20T,127
Nexperia USA Inc.
MOSFET N-CH 200V 8.7A TO220AB
74AVCH8T245PW,112
74AVCH8T245PW,112
Nexperia USA Inc.
IC TRANSLATION TXRX 3.6V 24TSSOP
74HCT373PW,112
74HCT373PW,112
Nexperia USA Inc.
IC OCTAL D TRANSP LATCH 20TSSOP
HEF4094BTTJ
HEF4094BTTJ
Nexperia USA Inc.
IC SHIFT/STORE REGISTER
NXB0104GU12X
NXB0104GU12X
Nexperia USA Inc.
IC TXRX TRANSLATING XQFN12