BC857CQC-QZ
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Nexperia USA Inc. BC857CQC-QZ

Manufacturer No:
BC857CQC-QZ
Manufacturer:
Nexperia USA Inc.
Package:
Tape & Reel (TR)
Description:
TRANS PNP 45V 0.1A DFN1412D-3
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BC857CQC-QZ is a PNP general-purpose bipolar transistor manufactured by Nexperia USA Inc. This transistor is part of the BC857XQC-Q series and is designed for a wide range of applications, particularly in the automotive sector. It is qualified according to AEC-Q101 standards, ensuring its reliability and performance in demanding automotive environments.

The transistor features a compact DFN1412D-3 (SOT8009) package, which is a plastic, leadless ultra small outline package with side-wettable flanks (SWF). This package is optimized for space-saving and efficient thermal performance.

Key Specifications

Parameter Value
Type Number BC857CQC-QZ
Package DFN1412D-3 (SOT8009)
Size (mm) 1.4 x 1.2 x 0.48
Channel Type PNP
Total Power Dissipation (Ptot) 360 mW
Collector-Emitter Voltage (VCEO) -45 V
Collector Current (IC) -100 mA
Current Gain (hFE) Min/Max 420 / 800
Junction Temperature (TJ) 150 °C
Transition Frequency (fT) 100 MHz
Automotive Qualified Yes (AEC-Q101)

Key Features

  • Low Current and Voltage: The BC857CQC-QZ operates with a maximum collector current of 100 mA and a maximum collector-emitter voltage of 45 V.
  • High Current Gain: The transistor has a high current gain (hFE) ranging from 420 to 800, ensuring reliable amplification and switching performance.
  • Compact Package: The DFN1412D-3 package is designed for space-saving and efficient thermal performance, making it ideal for modern electronic designs.
  • AEC-Q101 Qualified: This transistor is qualified according to AEC-Q101 standards, making it suitable for use in automotive applications where reliability and durability are critical.
  • RoHS and RHF Compliant: The component is compliant with RoHS and RHF (Restriction of Hazardous Substances and RoHS-compliant, Halogen-free) standards, ensuring environmental sustainability.

Applications

  • Automotive Systems: The BC857CQC-QZ is particularly suited for use in automotive applications due to its AEC-Q101 qualification, including general-purpose switching and amplification in vehicles.
  • Industrial Electronics: It can be used in various industrial control systems, sensors, and actuators where reliability and compact design are essential.
  • Consumer Electronics: The transistor is also applicable in consumer electronics such as audio amplifiers, power supplies, and other general-purpose electronic circuits.

Q & A

  1. What is the maximum collector current of the BC857CQC-QZ transistor?

    The maximum collector current is 100 mA.

  2. What is the maximum collector-emitter voltage of the BC857CQC-QZ transistor?

    The maximum collector-emitter voltage is 45 V.

  3. What package type does the BC857CQC-QZ transistor use?

    The transistor uses the DFN1412D-3 (SOT8009) package.

  4. Is the BC857CQC-QZ transistor qualified for automotive applications?

    Yes, it is qualified according to AEC-Q101 standards.

  5. What is the transition frequency of the BC857CQC-QZ transistor?

    The transition frequency is 100 MHz.

  6. Is the BC857CQC-QZ transistor RoHS and RHF compliant?

    Yes, it is compliant with both RoHS and RHF standards.

  7. What are the dimensions of the DFN1412D-3 package?

    The dimensions are 1.4 x 1.2 x 0.48 mm.

  8. What is the current gain range of the BC857CQC-QZ transistor?

    The current gain (hFE) ranges from 420 to 800.

  9. What is the maximum junction temperature of the BC857CQC-QZ transistor?

    The maximum junction temperature is 150 °C.

  10. How can I obtain samples of the BC857CQC-QZ transistor?

    Samples can be ordered through Nexperia's sales organization or through their network of global and regional distributors.

Product Attributes

Transistor Type:PNP
Current - Collector (Ic) (Max):100 mA
Voltage - Collector Emitter Breakdown (Max):45 V
Vce Saturation (Max) @ Ib, Ic:650mV @ 5mA, 100mA
Current - Collector Cutoff (Max):15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:420 @ 2mA, 5V
Power - Max:360 mW
Frequency - Transition:100MHz
Operating Temperature:150°C (TJ)
Mounting Type:Surface Mount, Wettable Flank
Package / Case:3-XDFN Exposed Pad
Supplier Device Package:DFN1412D-3
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Similar Products

Part Number BC857CQC-QZ BC857BQC-QZ
Manufacturer Nexperia USA Inc. Nexperia USA Inc.
Product Status Active Active
Transistor Type PNP PNP
Current - Collector (Ic) (Max) 100 mA 100 mA
Voltage - Collector Emitter Breakdown (Max) 45 V 45 V
Vce Saturation (Max) @ Ib, Ic 650mV @ 5mA, 100mA 650mV @ 5mA, 100mA
Current - Collector Cutoff (Max) 15nA (ICBO) 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 420 @ 2mA, 5V 220 @ 2mA, 5V
Power - Max 360 mW 360 mW
Frequency - Transition 100MHz 100MHz
Operating Temperature 150°C (TJ) 150°C (TJ)
Mounting Type Surface Mount, Wettable Flank Surface Mount, Wettable Flank
Package / Case 3-XDFN Exposed Pad 3-XDFN Exposed Pad
Supplier Device Package DFN1412D-3 DFN1412D-3

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