BC857CQC-QZ
  • Share:

Nexperia USA Inc. BC857CQC-QZ

Manufacturer No:
BC857CQC-QZ
Manufacturer:
Nexperia USA Inc.
Package:
Tape & Reel (TR)
Description:
TRANS PNP 45V 0.1A DFN1412D-3
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BC857CQC-QZ is a PNP general-purpose bipolar transistor manufactured by Nexperia USA Inc. This transistor is part of the BC857XQC-Q series and is designed for a wide range of applications, particularly in the automotive sector. It is qualified according to AEC-Q101 standards, ensuring its reliability and performance in demanding automotive environments.

The transistor features a compact DFN1412D-3 (SOT8009) package, which is a plastic, leadless ultra small outline package with side-wettable flanks (SWF). This package is optimized for space-saving and efficient thermal performance.

Key Specifications

Parameter Value
Type Number BC857CQC-QZ
Package DFN1412D-3 (SOT8009)
Size (mm) 1.4 x 1.2 x 0.48
Channel Type PNP
Total Power Dissipation (Ptot) 360 mW
Collector-Emitter Voltage (VCEO) -45 V
Collector Current (IC) -100 mA
Current Gain (hFE) Min/Max 420 / 800
Junction Temperature (TJ) 150 °C
Transition Frequency (fT) 100 MHz
Automotive Qualified Yes (AEC-Q101)

Key Features

  • Low Current and Voltage: The BC857CQC-QZ operates with a maximum collector current of 100 mA and a maximum collector-emitter voltage of 45 V.
  • High Current Gain: The transistor has a high current gain (hFE) ranging from 420 to 800, ensuring reliable amplification and switching performance.
  • Compact Package: The DFN1412D-3 package is designed for space-saving and efficient thermal performance, making it ideal for modern electronic designs.
  • AEC-Q101 Qualified: This transistor is qualified according to AEC-Q101 standards, making it suitable for use in automotive applications where reliability and durability are critical.
  • RoHS and RHF Compliant: The component is compliant with RoHS and RHF (Restriction of Hazardous Substances and RoHS-compliant, Halogen-free) standards, ensuring environmental sustainability.

Applications

  • Automotive Systems: The BC857CQC-QZ is particularly suited for use in automotive applications due to its AEC-Q101 qualification, including general-purpose switching and amplification in vehicles.
  • Industrial Electronics: It can be used in various industrial control systems, sensors, and actuators where reliability and compact design are essential.
  • Consumer Electronics: The transistor is also applicable in consumer electronics such as audio amplifiers, power supplies, and other general-purpose electronic circuits.

Q & A

  1. What is the maximum collector current of the BC857CQC-QZ transistor?

    The maximum collector current is 100 mA.

  2. What is the maximum collector-emitter voltage of the BC857CQC-QZ transistor?

    The maximum collector-emitter voltage is 45 V.

  3. What package type does the BC857CQC-QZ transistor use?

    The transistor uses the DFN1412D-3 (SOT8009) package.

  4. Is the BC857CQC-QZ transistor qualified for automotive applications?

    Yes, it is qualified according to AEC-Q101 standards.

  5. What is the transition frequency of the BC857CQC-QZ transistor?

    The transition frequency is 100 MHz.

  6. Is the BC857CQC-QZ transistor RoHS and RHF compliant?

    Yes, it is compliant with both RoHS and RHF standards.

  7. What are the dimensions of the DFN1412D-3 package?

    The dimensions are 1.4 x 1.2 x 0.48 mm.

  8. What is the current gain range of the BC857CQC-QZ transistor?

    The current gain (hFE) ranges from 420 to 800.

  9. What is the maximum junction temperature of the BC857CQC-QZ transistor?

    The maximum junction temperature is 150 °C.

  10. How can I obtain samples of the BC857CQC-QZ transistor?

    Samples can be ordered through Nexperia's sales organization or through their network of global and regional distributors.

Product Attributes

Transistor Type:PNP
Current - Collector (Ic) (Max):100 mA
Voltage - Collector Emitter Breakdown (Max):45 V
Vce Saturation (Max) @ Ib, Ic:650mV @ 5mA, 100mA
Current - Collector Cutoff (Max):15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:420 @ 2mA, 5V
Power - Max:360 mW
Frequency - Transition:100MHz
Operating Temperature:150°C (TJ)
Mounting Type:Surface Mount, Wettable Flank
Package / Case:3-XDFN Exposed Pad
Supplier Device Package:DFN1412D-3
0 Remaining View Similar

In Stock

$0.27
2,750

Please send RFQ , we will respond immediately.

Same Series
DD44S320000
DD44S320000
CONN D-SUB HD RCPT 44P VERT SLDR
RD15S10HE30/AA
RD15S10HE30/AA
CONN D-SUB RCPT 15POS CRIMP
DD15S200V5S/AA
DD15S200V5S/AA
CONN D-SUB HD RCPT 15P SLDR CUP
CBC9W4S10HTS/AA
CBC9W4S10HTS/AA
CONN D-SUB RCPT 9POS CRIMP
DD15S20WE2S/AA
DD15S20WE2S/AA
CONN D-SUB HD RCPT 15P SLDR CUP
DD26S2S0TX/AA
DD26S2S0TX/AA
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S200V3X
DD26S200V3X
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S2F00X
DD26S2F00X
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S2S0V5X/AA
DD26S2S0V5X/AA
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S2S50T20
DD26S2S50T20
CONN D-SUB HD RCPT 26P SLDR CUP
DD44S32S600X/AA
DD44S32S600X/AA
CONN D-SUB HD RCPT 44P VERT SLDR
DD26S20WT0/AA
DD26S20WT0/AA
CONN D-SUB HD RCPT 26P SLDR CUP

Similar Products

Part Number BC857CQC-QZ BC857BQC-QZ
Manufacturer Nexperia USA Inc. Nexperia USA Inc.
Product Status Active Active
Transistor Type PNP PNP
Current - Collector (Ic) (Max) 100 mA 100 mA
Voltage - Collector Emitter Breakdown (Max) 45 V 45 V
Vce Saturation (Max) @ Ib, Ic 650mV @ 5mA, 100mA 650mV @ 5mA, 100mA
Current - Collector Cutoff (Max) 15nA (ICBO) 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 420 @ 2mA, 5V 220 @ 2mA, 5V
Power - Max 360 mW 360 mW
Frequency - Transition 100MHz 100MHz
Operating Temperature 150°C (TJ) 150°C (TJ)
Mounting Type Surface Mount, Wettable Flank Surface Mount, Wettable Flank
Package / Case 3-XDFN Exposed Pad 3-XDFN Exposed Pad
Supplier Device Package DFN1412D-3 DFN1412D-3

Related Product By Categories

BC817-16LT1G
BC817-16LT1G
onsemi
TRANS NPN 45V 0.5A SOT23-3
BC857B
BC857B
Infineon Technologies
TRANS PNP 45V 0.1A SOT23-3
MMBT3904-7-F
MMBT3904-7-F
Diodes Incorporated
TRANS NPN 40V 0.2A SOT23-3
MMBT4124LT1G
MMBT4124LT1G
onsemi
TRANS NPN 25V 0.2A SOT23-3
MMBT3906LT1HTSA1
MMBT3906LT1HTSA1
Infineon Technologies
TRANS PNP 40V 0.2A SOT23
MPSA29-D26Z
MPSA29-D26Z
onsemi
TRANS NPN DARL 100V 0.8A TO92-3
BC856BMBYL
BC856BMBYL
Nexperia USA Inc.
TRANS PNP 60V 0.1A DFN1006B-3
MJD50TF
MJD50TF
onsemi
TRANS NPN 400V 1A DPAK
BC856AQBZ
BC856AQBZ
Nexperia USA Inc.
SMALL SIGNAL BIPOLAR IN DFN PACK
BC857CW-G
BC857CW-G
Comchip Technology
TRANS PNP 45V 0.1A SOT323
BCP53-10TX
BCP53-10TX
Nexperia USA Inc.
TRANS PNP 80V 1A SOT223
BCX5316H6327XTSA1
BCX5316H6327XTSA1
Infineon Technologies
TRANS PNP 80V 1A SOT89

Related Product By Brand

PMEG4005EH/6X
PMEG4005EH/6X
Nexperia USA Inc.
DIODE SCHOTTKY 40V 500MA SOD123F
BZX585-B4V7,135
BZX585-B4V7,135
Nexperia USA Inc.
DIODE ZENER 4.7V 300MW SOD523
MJD44H11J
MJD44H11J
Nexperia USA Inc.
TRANS NPN 80V 8A DPAK
PBSS4021PT,215
PBSS4021PT,215
Nexperia USA Inc.
TRANS PNP 20V 3.5A TO236AB
BC857BMB,315
BC857BMB,315
Nexperia USA Inc.
TRANSISTOR PNP 45V 100MA SOT883
PDTA114EU,115
PDTA114EU,115
Nexperia USA Inc.
TRANS PREBIAS PNP 200MW SOT323
BUK9Y14-40B,115
BUK9Y14-40B,115
Nexperia USA Inc.
MOSFET N-CH 40V 56A LFPAK56
74LVCH8T245BQ118
74LVCH8T245BQ118
Nexperia USA Inc.
IC TRANSLATR TXRX 5.5V 24DHVQFN
74LVC1G79GW,165
74LVC1G79GW,165
Nexperia USA Inc.
IC FF D-TYPE SNGL 1BIT 5TSSOP
74AHCT1G04GW-Q100H
74AHCT1G04GW-Q100H
Nexperia USA Inc.
IC INVERTER 1CH 1-INP 5TSSOP
74HC11DB,112
74HC11DB,112
Nexperia USA Inc.
NEXPERIA 74HC11D - AND GATE, HC/
74HC573PW,118
74HC573PW,118
Nexperia USA Inc.
IC LATCH OCTAL D 3STATE 20TSSOP