Overview
The BC847B-QR is a 45 V, 100 mA NPN general-purpose transistor manufactured by Nexperia USA Inc. This transistor is packaged in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package, making it suitable for a wide range of applications where space is limited. The BC847B-QR is part of the BC847 series, which offers three different gain selections, making it versatile for various general-purpose switching and amplification tasks.
Key Specifications
| Parameter | Value | Unit |
|---|---|---|
| Transistor Polarity | NPN | |
| Collector Emitter Voltage (V(br)ceo) | 45 | V |
| Transition Frequency (ft) | 100 | MHz |
| Power Dissipation (Pd) | 250 | mW |
| DC Collector Current (Ic) | 100 | mA |
| DC Current Gain (hFE) | 125 | |
| Transistor Case Style | SOT-23 | |
| No. of Pins | 3 | |
| Operating Temperature Max (Tj) | 150 | °C |
| Collector Emitter Saturation Voltage (Vce(on)) | 200 | mV |
Key Features
- Compact Package: The BC847B-QR is housed in a small SOT23 package, making it ideal for space-constrained designs.
- General-Purpose Use: Suitable for both switching and amplification applications due to its versatile characteristics.
- High Collector Emitter Voltage: With a V(br)ceo of 45 V, it can handle a wide range of voltage levels.
- Low Power Dissipation: The transistor has a power dissipation of 250 mW, which is efficient for many applications.
- High Transition Frequency: A transition frequency of 100 MHz ensures good high-frequency performance.
Applications
The BC847B-QR is widely used across various industries due to its general-purpose nature. Some common applications include:
- Automotive Systems: Used in automotive electronics for various control and sensing functions.
- Industrial Control Systems: Employed in industrial automation for switching and amplification tasks.
- Consumer Electronics: Found in consumer devices such as audio equipment, power supplies, and other electronic circuits.
- Mobile and Wearable Devices: Used in mobile and wearable electronics where space and efficiency are critical.
Q & A
- What is the collector emitter voltage of the BC847B-QR transistor?
The collector emitter voltage (V(br)ceo) of the BC847B-QR is 45 V.
- What is the maximum collector current of the BC847B-QR?
The maximum collector current (Ic) of the BC847B-QR is 100 mA.
- What is the package type of the BC847B-QR transistor?
The BC847B-QR is packaged in a SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package.
- What is the operating temperature range of the BC847B-QR?
The maximum operating temperature (Tj) of the BC847B-QR is 150°C.
- What is the transition frequency of the BC847B-QR transistor?
The transition frequency (ft) of the BC847B-QR is 100 MHz.
- What are the typical applications of the BC847B-QR transistor?
The BC847B-QR is used in automotive, industrial, consumer electronics, and mobile/wearable devices for general-purpose switching and amplification.
- What is the power dissipation of the BC847B-QR transistor?
The power dissipation (Pd) of the BC847B-QR is 250 mW.
- What is the DC current gain (hFE) of the BC847B-QR transistor?
The DC current gain (hFE) of the BC847B-QR is 125.
- Is the BC847B-QR RoHS compliant?
Yes, the BC847B-QR is RoHS compliant.
- What is the collector emitter saturation voltage (Vce(on)) of the BC847B-QR transistor?
The collector emitter saturation voltage (Vce(on)) of the BC847B-QR is 200 mV.
