Overview
The BC847-QR is a general-purpose NPN bipolar transistor produced by Nexperia USA Inc. It is part of the BC847 series, which is widely used in various electronic applications due to its versatility and reliability. The transistor is housed in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package, making it suitable for compact and efficient designs.
Key Specifications
| Parameter | Value |
|---|---|
| Transistor Polarity | NPN |
| Collector Emitter Voltage (Vceo) | 45 V |
| Transition Frequency (ft) | 100 MHz |
| Power Dissipation (Pd) | 250 mW |
| DC Collector Current (Ic) | 100 mA |
| DC Current Gain (hFE) | 125 (typical) |
| Transistor Case Style | SOT-23 |
| No. of Pins | 3 Pins |
| Operating Temperature Max (TJ) | 150°C |
| Collector Emitter Saturation Voltage (Vce(on)) | 200 mV |
Key Features
- General-purpose transistor: Suitable for both switching and amplification applications.
- Compact packaging: SOT23 (TO-236AB) package, ideal for space-constrained designs.
- High reliability: Robust performance with a maximum junction temperature of 150°C.
- Low power consumption: Power dissipation of 250 mW, making it energy-efficient.
- Multiple gain selections: Available in different gain versions (A, B, C), allowing for flexibility in design.
Applications
The BC847-QR transistor is versatile and can be used in a wide range of applications across various industries, including:
- Automotive: For general-purpose switching and amplification in automotive electronics.
- Industrial: In control circuits, power supplies, and other industrial control systems.
- Consumer electronics: In audio amplifiers, power supplies, and other consumer electronic devices.
- Mobile and wearables: Due to its small size and low power consumption, it is suitable for mobile and wearable devices.
Q & A
- What is the collector-emitter voltage (Vceo) of the BC847-QR transistor?
The collector-emitter voltage (Vceo) of the BC847-QR transistor is 45 V.
- What is the typical DC current gain (hFE) of the BC847-QR transistor?
The typical DC current gain (hFE) of the BC847-QR transistor is 125.
- What is the maximum operating temperature of the BC847-QR transistor?
The maximum operating temperature (TJ) of the BC847-QR transistor is 150°C.
- What is the power dissipation (Pd) of the BC847-QR transistor?
The power dissipation (Pd) of the BC847-QR transistor is 250 mW.
- What package type is used for the BC847-QR transistor?
The BC847-QR transistor is housed in a SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package.
- What are the typical applications of the BC847-QR transistor?
The BC847-QR transistor is used in general-purpose switching and amplification applications across automotive, industrial, consumer electronics, and mobile/wearable devices.
- Is the BC847-QR transistor RoHS compliant?
- What is the transition frequency (ft) of the BC847-QR transistor?
The transition frequency (ft) of the BC847-QR transistor is 100 MHz.
- What is the collector-emitter saturation voltage (Vce(on)) of the BC847-QR transistor?
The collector-emitter saturation voltage (Vce(on)) of the BC847-QR transistor is 200 mV.
- Are there different gain versions available for the BC847-QR transistor?
- How can I obtain the datasheet and other support documents for the BC847-QR transistor?
