Overview
The BC847C-QR is a high-performance NPN bipolar junction transistor (BJT) manufactured by Nexperia USA Inc. This transistor is designed for general-purpose applications and is known for its reliability and versatility. It is packaged in a surface-mount TO-236AB (SOT23) package, making it suitable for a wide range of electronic circuits.
Key Specifications
| Parameter | Value |
|---|---|
| Collector-Emitter Voltage (Vce) | 45 V |
| Collector-Base Voltage (Vcb) | 50 V |
| Emitter-Base Voltage (Veb) | 6 V |
| Collector Current (Ic) | 100 mA |
| Power Dissipation (Pd) | 250 mW |
| Transition Frequency (ft) | 100 MHz |
| Package Type | TO-236AB (SOT23) |
Key Features
- High collector current capability of up to 100 mA.
- High collector-emitter voltage of 45 V.
- Low power dissipation of 250 mW.
- High transition frequency of 100 MHz, suitable for high-frequency applications.
- Surface-mount TO-236AB (SOT23) package for compact design.
- General-purpose use in a variety of electronic circuits.
Applications
The BC847C-QR transistor is versatile and can be used in a wide range of applications, including:
- Amplifier circuits.
- Switching circuits.
- Audio and video equipment.
- Automotive electronics.
- Industrial control systems.
Q & A
- What is the collector-emitter voltage of the BC847C-QR transistor?
The collector-emitter voltage (Vce) of the BC847C-QR transistor is 45 V. - What is the maximum collector current of the BC847C-QR transistor?
The maximum collector current (Ic) of the BC847C-QR transistor is 100 mA. - What is the power dissipation of the BC847C-QR transistor?
The power dissipation (Pd) of the BC847C-QR transistor is 250 mW. - What is the transition frequency of the BC847C-QR transistor?
The transition frequency (ft) of the BC847C-QR transistor is 100 MHz. - What package type is the BC847C-QR transistor available in?
The BC847C-QR transistor is available in a surface-mount TO-236AB (SOT23) package. - What are some common applications of the BC847C-QR transistor?
The BC847C-QR transistor is commonly used in amplifier circuits, switching circuits, audio and video equipment, automotive electronics, and industrial control systems. - Who is the manufacturer of the BC847C-QR transistor?
The BC847C-QR transistor is manufactured by Nexperia USA Inc. - What is the collector-base voltage of the BC847C-QR transistor?
The collector-base voltage (Vcb) of the BC847C-QR transistor is 50 V. - What is the emitter-base voltage of the BC847C-QR transistor?
The emitter-base voltage (Veb) of the BC847C-QR transistor is 6 V. - Is the BC847C-QR transistor suitable for high-frequency applications?
Yes, the BC847C-QR transistor is suitable for high-frequency applications due to its high transition frequency of 100 MHz.
