Overview
The BSS138W-TP is an N-Channel Logic Level Enhancement Mode Field Effect Transistor (FET) produced by Micro Commercial Components. This device is designed to offer low on-state resistance, rugged reliability, and fast switching performance, making it suitable for various low-voltage and low-current applications.
Key Specifications
| Parameter | Symbol | Test Conditions | Min | Typ | Max | Unit |
|---|---|---|---|---|---|---|
| Drain to Source Voltage | VDSS | 50 | V | |||
| Gate to Source Voltage | VGSS | ±20 | V | |||
| Drain Current - Continuous | ID | 0.21 | A | |||
| Drain Current - Pulsed | ID | 0.84 | A | |||
| Operating and Storage Junction Temperature Range | TJ, TSTG | -55 | +150 | °C | ||
| Maximum Lead Temperature for Soldering Purposes | TL | 1/16” from Case for 10 Seconds | 300 | °C | ||
| Drain-Source Breakdown Voltage | V(BR)DSS | VGS = 0 V, ID = 250 µA | 50 | V | ||
| Gate-Threshold Voltage | VGS(th) | VDS = VGS, ID = 1 mA | 0.8 | 1.5 | V | |
| Gate-Body Leakage Current | IGSS | VGS = ±20 V, VDS = 0 V | ±100 nA | |||
| Drain-Source On-Resistance | RDS(on) | VGS = 10 V, ID = 0.22 A | 3.5 | Ω | ||
| Thermal Resistance, Junction to Ambient | RθJA | 367 | °C/W |
Key Features
- Low On-State Resistance: The BSS138W-TP features a low RDS(on) of 3.5 Ω at VGS = 10 V and ID = 0.22 A, ensuring minimal power loss during operation.
- Rugged and Reliable: Designed for rugged and reliable performance, this MOSFET is suitable for demanding applications.
- Compact Industry Standard Package: The device is packaged in a compact SOT-323 surface mount package, making it ideal for space-constrained designs.
- Lead-Free and Halide-Free: The BSS138W-TP is Pb-free and halide-free, complying with RoHS standards.
- High Density Cell Design: The high density cell design contributes to extremely low RDS(on) values.
Applications
- Low Voltage, Low Current Applications: Suitable for applications such as small servo motor control, power MOSFET gate drivers, and other switching applications.
- Switching Circuits: Ideal for use in various switching circuits where low on-state resistance and fast switching are required.
- Automotive and Industrial Control Systems: Can be used in automotive and industrial control systems due to its rugged and reliable performance.
Q & A
- What is the maximum drain to source voltage for the BSS138W-TP?
The maximum drain to source voltage (VDSS) is 50 V.
- What is the typical on-state resistance of the BSS138W-TP?
The typical on-state resistance (RDS(on)) is 3.5 Ω at VGS = 10 V and ID = 0.22 A.
- What is the operating junction temperature range for this MOSFET?
The operating and storage junction temperature range is -55°C to +150°C.
- Is the BSS138W-TP RoHS compliant?
- What is the thermal resistance of the BSS138W-TP?
The thermal resistance (RθJA) is 367°C/W.
- What package type is used for the BSS138W-TP?
The device is packaged in a SOT-323 surface mount package.
- What are some common applications for the BSS138W-TP?
- What is the gate threshold voltage for the BSS138W-TP?
The gate threshold voltage (VGS(th)) is between 0.8 V and 1.5 V.
- What is the maximum continuous drain current for the BSS138W-TP?
The maximum continuous drain current (ID) is 0.21 A.
- What is the maximum pulsed drain current for the BSS138W-TP?
The maximum pulsed drain current (ID) is 0.84 A.
