VN2222LL-G-P013
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Microchip Technology VN2222LL-G-P013

Manufacturer No:
VN2222LL-G-P013
Manufacturer:
Microchip Technology
Package:
Cut Tape (CT)
Description:
MOSFET N-CH 60V 230MA TO92-3
Delivery:
Payment:
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Product Introduction

Overview

The VN2222LL-G-P013 is an N-channel MOSFET transistor produced by Microchip Technology. This component is designed for a variety of applications requiring low power consumption and high reliability. The VN2222LL-G-P013 is packaged in a TO-92-3 case, making it suitable for space-constrained designs. It operates within a temperature range of -55°C to +150°C, ensuring robust performance in diverse environmental conditions.

Key Specifications

ParameterValue
Voltage Rating (Vds)60V
Continuous Drain Current (Id)0.23A
Maximum Drain Current (Idm)1A
Power Dissipation (Pd)1W
Package TypeTO-92-3
Operating Temperature Range-55°C to +150°C
RoHS ComplianceYes

Key Features

  • N-channel MOSFET transistor with low power consumption.
  • High voltage rating of 60V.
  • Continuous drain current of 0.23A and maximum drain current of 1A.
  • Compact TO-92-3 package suitable for space-constrained designs.
  • Wide operating temperature range from -55°C to +150°C.
  • RoHS compliant, ensuring environmental sustainability.

Applications

The VN2222LL-G-P013 is versatile and can be used in various applications, including:

  • Power switching and control circuits.
  • Low power motor control.
  • Audio amplifiers and other low power electronic devices.
  • Automotive and industrial control systems.

Q & A

  1. What is the voltage rating of the VN2222LL-G-P013 MOSFET?
    The voltage rating (Vds) of the VN2222LL-G-P013 is 60V.
  2. What is the continuous drain current of this MOSFET?
    The continuous drain current (Id) is 0.23A.
  3. What is the maximum drain current of this MOSFET?
    The maximum drain current (Idm) is 1A.
  4. What is the package type of the VN2222LL-G-P013?
    The package type is TO-92-3.
  5. What is the operating temperature range of this MOSFET?
    The operating temperature range is from -55°C to +150°C.
  6. Is the VN2222LL-G-P013 RoHS compliant?
    Yes, the VN2222LL-G-P013 is RoHS compliant.
  7. What are some common applications for the VN2222LL-G-P013?
    Common applications include power switching and control circuits, low power motor control, audio amplifiers, and automotive and industrial control systems.
  8. How much power can the VN2222LL-G-P013 dissipate?
    The power dissipation (Pd) is 1W.
  9. Where can I find detailed specifications for the VN2222LL-G-P013?
    Detailed specifications can be found on Microchip Technology's official website, as well as on distributor websites like Mouser and TME.
  10. What is the typical use case for the VN2222LL-G-P013 in electronic devices?
    The VN2222LL-G-P013 is typically used in low power electronic devices that require reliable and efficient switching capabilities.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):60 V
Current - Continuous Drain (Id) @ 25°C:230mA (Tj)
Drive Voltage (Max Rds On, Min Rds On):5V, 10V
Rds On (Max) @ Id, Vgs:7.5Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id:2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:- 
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:60 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):400mW (Ta), 1W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-92-3
Package / Case:TO-226-3, TO-92-3 (TO-226AA) Formed Leads
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Same Series
VN2222LL-G
VN2222LL-G
MOSFET N-CH 60V 230MA TO92-3
VN2222LL-G-P013
VN2222LL-G-P013
MOSFET N-CH 60V 230MA TO92-3

Similar Products

Part Number VN2222LL-G-P013 VN2222LL-G-P003
Manufacturer Microchip Technology Microchip Technology
Product Status Active Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V 60 V
Current - Continuous Drain (Id) @ 25°C 230mA (Tj) 230mA (Tj)
Drive Voltage (Max Rds On, Min Rds On) 5V, 10V 5V, 10V
Rds On (Max) @ Id, Vgs 7.5Ohm @ 500mA, 10V 7.5Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id 2.5V @ 1mA 2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs - -
Vgs (Max) ±30V ±30V
Input Capacitance (Ciss) (Max) @ Vds 60 pF @ 25 V 60 pF @ 25 V
FET Feature - -
Power Dissipation (Max) 400mW (Ta), 1W (Tc) 400mW (Ta), 1W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole
Supplier Device Package TO-92-3 TO-92-3
Package / Case TO-226-3, TO-92-3 (TO-226AA) Formed Leads TO-226-3, TO-92-3 (TO-226AA) Formed Leads

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