IRF7832TRPBF
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Infineon Technologies IRF7832TRPBF

Manufacturer No:
IRF7832TRPBF
Manufacturer:
Infineon Technologies
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 30V 20A 8SO
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The IRF7832TRPBF is a high-performance N-Channel MOSFET produced by Infineon Technologies. This device is designed for use in various power management applications, particularly in mobile communication architectures and isolated converters. It features a low on-resistance and high current handling capabilities, making it an ideal choice for synchronous buck converters and secondary-side synchronous rectification.

Key Specifications

ParameterValueUnits
FET TypeN-Ch
No of Channels1
Drain-to-Source Voltage (Vdss)30V
Drain-Source On Resistance-Max4.8
Rated Power Dissipation2.5W
Gate Charge (Qg)51nC
Gate-Source Voltage-Max (Vgss)20V
Drain Current20A
Turn-on Delay Time12ns
Turn-off Delay Time21ns
Rise Time6.7ns
Fall Time13ns
Operating Temp Range-55°C to +155°C
Gate Source Threshold2.32V
TechnologySi
Height - Max1.5mm
Length5mm
Input Capacitance4310pF
Package StyleSOIC-8
Mounting MethodSurface Mount

Key Features

  • Low on-resistance of 4.8 mΩ at 10 V, making it suitable for high-efficiency power conversion.
  • High current handling capability of up to 20 A.
  • Wide operating temperature range from -55°C to +155°C.
  • Fast switching times with turn-on delay of 12 ns and turn-off delay of 21 ns.
  • Lead-free and RoHS compliant.
  • Available in SOIC-8 package with Tape and Reel (TRPBF) packaging option.

Applications

The IRF7832TRPBF is primarily used in synchronous buck converters and secondary-side synchronous rectification in isolated converters. It is particularly suited for mobile communication architectures due to its high efficiency and fast switching capabilities. Other potential applications include power supplies, DC-DC converters, and any system requiring high current and low on-resistance MOSFETs.

Q & A

  1. What is the maximum drain-to-source voltage of the IRF7832TRPBF?
    The maximum drain-to-source voltage (Vdss) is 30 V.
  2. What is the on-resistance of the IRF7832TRPBF at 10 V?
    The on-resistance is 4.8 mΩ at 10 V.
  3. What is the maximum drain current of the IRF7832TRPBF?
    The maximum drain current is 20 A.
  4. What is the operating temperature range of the IRF7832TRPBF?
    The operating temperature range is from -55°C to +155°C.
  5. What is the package style of the IRF7832TRPBF?
    The package style is SOIC-8.
  6. Is the IRF7832TRPBF lead-free and RoHS compliant?
    Yes, it is lead-free and RoHS compliant.
  7. What are the typical applications of the IRF7832TRPBF?
    Typical applications include synchronous buck converters, secondary-side synchronous rectification in isolated converters, and mobile communication architectures.
  8. What is the gate-source threshold voltage of the IRF7832TRPBF?
    The gate-source threshold voltage is 2.32 V.
  9. What is the turn-on delay time of the IRF7832TRPBF?
    The turn-on delay time is 12 ns.
  10. What is the input capacitance of the IRF7832TRPBF?
    The input capacitance is 4310 pF.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):30 V
Current - Continuous Drain (Id) @ 25°C:20A (Ta)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:4mOhm @ 20A, 10V
Vgs(th) (Max) @ Id:2.32V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:51 nC @ 4.5 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:4310 pF @ 15 V
FET Feature:- 
Power Dissipation (Max):2.5W (Ta)
Operating Temperature:-55°C ~ 155°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:8-SO
Package / Case:8-SOIC (0.154", 3.90mm Width)
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Same Series
IRF7832PBF
IRF7832PBF
MOSFET N-CH 30V 20A 8SO

Similar Products

Part Number IRF7832TRPBF IRF7842TRPBF IRF7862TRPBF IRF7834TRPBF IRF7822TRPBF IRF7831TRPBF
Manufacturer Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies
Product Status Active Active Active Obsolete Obsolete Active
FET Type N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V 40 V 30 V 30 V 30 V 30 V
Current - Continuous Drain (Id) @ 25°C 20A (Ta) 18A (Ta) 21A (Ta) 19A (Ta) 18A (Ta) 21A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V 4.5V, 10V 4.5V, 10V 4.5V, 10V 4.5V 4.5V, 10V
Rds On (Max) @ Id, Vgs 4mOhm @ 20A, 10V 5mOhm @ 17A, 10V 3.7mOhm @ 20A, 10V 4.5mOhm @ 19A, 10V 6.5mOhm @ 15A, 4.5V 3.6mOhm @ 20A, 10V
Vgs(th) (Max) @ Id 2.32V @ 250µA 2.25V @ 250µA 2.35V @ 100µA 2.25V @ 250µA 1V @ 250µA 2.35V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 51 nC @ 4.5 V 50 nC @ 4.5 V 45 nC @ 4.5 V 44 nC @ 4.5 V 60 nC @ 5 V 60 nC @ 4.5 V
Vgs (Max) ±20V ±20V ±20V ±20V ±12V ±12V
Input Capacitance (Ciss) (Max) @ Vds 4310 pF @ 15 V 4500 pF @ 20 V 4090 pF @ 15 V 3710 pF @ 15 V 5500 pF @ 16 V 6240 pF @ 15 V
FET Feature - - - - - -
Power Dissipation (Max) 2.5W (Ta) 2.5W (Ta) 2.5W (Ta) 2.5W (Ta) 3.1W (Ta) 2.5W (Ta)
Operating Temperature -55°C ~ 155°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount
Supplier Device Package 8-SO 8-SO 8-SO 8-SO 8-SO 8-SO
Package / Case 8-SOIC (0.154", 3.90mm Width) 8-SOIC (0.154", 3.90mm Width) 8-SOIC (0.154", 3.90mm Width) 8-SOIC (0.154", 3.90mm Width) 8-SOIC (0.154", 3.90mm Width) 8-SOIC (0.154", 3.90mm Width)

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