BC856SH6327XTSA1
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Infineon Technologies BC856SH6327XTSA1

Manufacturer No:
BC856SH6327XTSA1
Manufacturer:
Infineon Technologies
Package:
Tape & Reel (TR)
Description:
TRANS 2PNP 65V 0.1A SOT363
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BC856SH6327XTSA1 is a PNP general-purpose transistor produced by Infineon Technologies. This transistor is designed for low-power surface mount applications and is housed in a 6-VSSOP, SC-88, or SOT-363 package. It is part of the BC856 family, known for its reliability and versatility in various electronic circuits.

Key Specifications

Parameter Value Unit
Collector-Emitter Voltage (VCEO) -65 V
Collector-Base Voltage (VCBO) -80 V
Emitter-Base Voltage (VEBO) -5.0 V
Collector Current (IC) -100 mA
Peak Collector Current (ICM) -200 mA
DC Current Gain (hFE) 125 - 475 -
Collector-Emitter Saturation Voltage (VCE(sat)) -0.3 - 0.65 V
Base-Emitter Saturation Voltage (VBE(sat)) -0.7 - 0.9 V
Total Power Dissipation (Ptot) 250 mW
Junction Temperature (Tj) -150 °C
Storage Temperature (Tstg) -65 to 150 °C

Key Features

  • Low Current and Voltage: Maximum collector current of 100 mA and collector-emitter voltage of 65 V.
  • Compact Package: Housed in a 6-VSSOP, SC-88, or SOT-363 package, suitable for surface mount applications.
  • General-Purpose Use: Designed for general-purpose switching and amplification.
  • Environmental Compliance: RoHS compliant, Pb-free, and halogen-free.
  • High DC Current Gain: hFE ranges from 125 to 475, depending on the specific variant.

Applications

  • General-Purpose Amplification: Suitable for various amplifier circuits due to its high DC current gain and low noise characteristics.
  • Switching Circuits: Used in switching applications where low current and voltage are required.
  • Automotive and Industrial Electronics: AEC-Q101 qualified and PPAP capable, making it suitable for automotive and other demanding applications.

Q & A

  1. What is the maximum collector-emitter voltage of the BC856SH6327XTSA1?

    The maximum collector-emitter voltage (VCEO) is -65 V.

  2. What is the package type of the BC856SH6327XTSA1?

    The transistor is housed in a 6-VSSOP, SC-88, or SOT-363 package.

  3. What is the maximum collector current of the BC856SH6327XTSA1?

    The maximum collector current (IC) is -100 mA.

  4. Is the BC856SH6327XTSA1 RoHS compliant?

    Yes, the transistor is RoHS compliant, Pb-free, and halogen-free.

  5. What are the typical applications of the BC856SH6327XTSA1?

    It is used in general-purpose amplification, switching circuits, and in automotive and industrial electronics.

  6. What is the DC current gain (hFE) range of the BC856SH6327XTSA1?

    The DC current gain (hFE) ranges from 125 to 475, depending on the specific variant.

  7. What is the maximum junction temperature of the BC856SH6327XTSA1?

    The maximum junction temperature (Tj) is 150°C.

  8. Is the BC856SH6327XTSA1 AEC-Q101 qualified?

    Yes, it is AEC-Q101 qualified and PPAP capable, making it suitable for automotive applications).

  9. What is the total power dissipation (Ptot) of the BC856SH6327XTSA1?

    The total power dissipation (Ptot) is 250 mW).

  10. What is the collector-emitter saturation voltage (VCE(sat)) of the BC856SH6327XTSA1?

    The collector-emitter saturation voltage (VCE(sat)) is between -0.3 and -0.65 V).

Product Attributes

Transistor Type:2 PNP (Dual)
Current - Collector (Ic) (Max):100mA
Voltage - Collector Emitter Breakdown (Max):65V
Vce Saturation (Max) @ Ib, Ic:650mV @ 5mA, 100mA
Current - Collector Cutoff (Max):15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:200 @ 2mA, 5V
Power - Max:250mW
Frequency - Transition:250MHz
Operating Temperature:150°C (TJ)
Mounting Type:Surface Mount
Package / Case:6-VSSOP, SC-88, SOT-363
Supplier Device Package:PG-SOT363-PO
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Similar Products

Part Number BC856SH6327XTSA1 BCM856SH6327XTSA1 BC857SH6327XTSA1
Manufacturer Infineon Technologies Infineon Technologies Infineon Technologies
Product Status Not For New Designs Not For New Designs Not For New Designs
Transistor Type 2 PNP (Dual) 2 PNP (Dual) 2 PNP (Dual)
Current - Collector (Ic) (Max) 100mA 100mA 100mA
Voltage - Collector Emitter Breakdown (Max) 65V 65V 45V
Vce Saturation (Max) @ Ib, Ic 650mV @ 5mA, 100mA 650mV @ 5mA, 100mA 650mV @ 5mA, 100mA
Current - Collector Cutoff (Max) 15nA (ICBO) 15nA (ICBO) 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 200 @ 2mA, 5V 200 @ 2mA, 5V 200 @ 2mA, 5V
Power - Max 250mW 250mW 250mW
Frequency - Transition 250MHz 250MHz 250MHz
Operating Temperature 150°C (TJ) 150°C (TJ) 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount
Package / Case 6-VSSOP, SC-88, SOT-363 6-VSSOP, SC-88, SOT-363 6-VSSOP, SC-88, SOT-363
Supplier Device Package PG-SOT363-PO PG-SOT363-PO PG-SOT363-PO

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