BC846BB5000
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Infineon Technologies BC846BB5000

Manufacturer No:
BC846BB5000
Manufacturer:
Infineon Technologies
Package:
Bulk
Description:
TRANS NPN 65V 0.1A SOT23
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BC846BB5000 is a general-purpose NPN bipolar junction transistor (BJT) manufactured by Infineon Technologies. It is part of the BC846 series, known for its high current gain and low collector-emitter saturation voltage, making it suitable for a variety of applications, particularly in audio frequency (AF) input stages and driver circuits. The transistor is packaged in a Pb-free (RoHS compliant) SOT-23-3 package and is qualified according to AEC Q101 standards, ensuring reliability and performance in automotive and industrial environments.

Key Specifications

ParameterValue
Collector-Base Breakdown Voltage (VCBO)80 V
Emitter-Base Breakdown Voltage (VEB0)6.0 V
Collector Cutoff Current (ICBO)15 nA (VCB = 30 V, TA = 150 °C)
DC Current Gain (hFE)110 - 450 (IC = 2.0 mA, VCE = 5.0 V)
Collector-Emitter Saturation Voltage (VCE(sat))0.25 V (IC = 10 mA, IB = 0.5 mA)
Base-Emitter Saturation Voltage (VBE(sat))0.7 V (IC = 10 mA, IB = 0.5 mA)
Maximum Collector Current0.1 A
Maximum Power Dissipation330 mW
Minimum Operating Temperature-65 °C
Package TypeSOT-23-3
Number of Pins3

Key Features

  • High current gain (hFE)
  • Low collector-emitter saturation voltage (VCE(sat))
  • Two galvanic internal isolated transistors in one package
  • Pb-free (RoHS compliant) package
  • Qualified according to AEC Q101 standards

Applications

The BC846BB5000 is primarily used in audio frequency (AF) input stages and driver applications. Its high current gain and low collector-emitter saturation voltage make it suitable for a variety of electronic circuits requiring reliable and efficient transistor performance.

Q & A

  1. What is the collector-base breakdown voltage of the BC846BB5000?
    The collector-base breakdown voltage (VCBO) is 80 V.
  2. What is the emitter-base breakdown voltage of the BC846BB5000?
    The emitter-base breakdown voltage (VEB0) is 6.0 V.
  3. What is the DC current gain (hFE) of the BC846BB5000?
    The DC current gain (hFE) ranges from 110 to 450 at IC = 2.0 mA and VCE = 5.0 V.
  4. What is the collector-emitter saturation voltage of the BC846BB5000?
    The collector-emitter saturation voltage (VCE(sat)) is 0.25 V at IC = 10 mA and IB = 0.5 mA.
  5. What is the maximum collector current of the BC846BB5000?
    The maximum collector current is 0.1 A.
  6. What is the maximum power dissipation of the BC846BB5000?
    The maximum power dissipation is 330 mW.
  7. What is the minimum operating temperature of the BC846BB5000?
    The minimum operating temperature is -65 °C.
  8. What type of package does the BC846BB5000 come in?
    The BC846BB5000 comes in a SOT-23-3 package.
  9. Is the BC846BB5000 RoHS compliant?
    Yes, the BC846BB5000 is Pb-free (RoHS compliant).
  10. What are the primary applications of the BC846BB5000?
    The primary applications include AF input stages and driver circuits.

Product Attributes

Transistor Type:NPN
Current - Collector (Ic) (Max):100 mA
Voltage - Collector Emitter Breakdown (Max):65 V
Vce Saturation (Max) @ Ib, Ic:600mV @ 5mA, 100mA
Current - Collector Cutoff (Max):15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:200 @ 2mA, 5V
Power - Max:330 mW
Frequency - Transition:250MHz
Operating Temperature:150°C (TJ)
Mounting Type:Surface Mount
Package / Case:TO-236-3, SC-59, SOT-23-3
Supplier Device Package:PG-SOT23
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