BC846AE6327
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Infineon Technologies BC846AE6327

Manufacturer No:
BC846AE6327
Manufacturer:
Infineon Technologies
Package:
Bulk
Description:
TRANS NPN 45V 0.1A SOT23
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BC846AE6327 is a high-performance NPN bipolar junction transistor (BJT) manufactured by Infineon Technologies. This transistor is designed for a wide range of applications requiring high current gain, low noise, and high frequency operation. It is packaged in a PG-SOT23-3 surface mount case, making it suitable for modern electronic designs where space efficiency is crucial.

Key Specifications

ParameterValue
Transistor TypeNPN
Collector-Emitter Voltage (Vce)45 V
Collector Current (Ic)100 mA
Transition Frequency (fT)250 MHz
Power Dissipation (Pd)330 mW
DC Current Gain (hFE)110 @ 2 mA, 5 V
Collector-Emitter Saturation Voltage (Vce(sat))600 mV @ 5 mA, 100 mA
Collector-Emitter Breakdown Voltage (Vceo)65 V
Operating Temperature (Tj)150°C
PackagePG-SOT23-3
Moisture Sensitivity Level (MSL)1 (Unlimited)
Lead Free Status / ROHS StatusLead Free / ROHS Compliant

Key Features

  • High DC current gain (hFE) of 110 @ 2 mA, 5 V, ensuring reliable amplification.
  • High transition frequency (fT) of 250 MHz, suitable for high-frequency applications.
  • Low collector-emitter saturation voltage (Vce(sat)) of 600 mV @ 5 mA, 100 mA, reducing power losses.
  • Compact PG-SOT23-3 surface mount package, ideal for space-constrained designs.
  • Lead-free and ROHS compliant, meeting environmental standards.
  • High operating temperature up to 150°C, enhancing reliability in various environments.

Applications

The BC846AE6327 transistor is versatile and can be used in a variety of applications, including:

  • Amplifier circuits: Due to its high current gain and low noise characteristics.
  • Switching circuits: Benefiting from its high transition frequency and low saturation voltage.
  • Audio and video equipment: Where high fidelity and low distortion are required.
  • Automotive and industrial control systems: Given its robustness and high operating temperature range.
  • General-purpose electronic designs: Where reliability and performance are critical.

Q & A

  1. What is the transistor type of the BC846AE6327?
    The BC846AE6327 is an NPN bipolar junction transistor (BJT).
  2. What is the maximum collector current of the BC846AE6327?
    The maximum collector current is 100 mA.
  3. What is the transition frequency of the BC846AE6327?
    The transition frequency is 250 MHz.
  4. What is the power dissipation of the BC846AE6327?
    The power dissipation is 330 mW.
  5. What is the DC current gain of the BC846AE6327?
    The DC current gain (hFE) is 110 @ 2 mA, 5 V.
  6. What is the collector-emitter saturation voltage of the BC846AE6327?
    The collector-emitter saturation voltage (Vce(sat)) is 600 mV @ 5 mA, 100 mA.
  7. What is the operating temperature range of the BC846AE6327?
    The operating temperature range is up to 150°C.
  8. Is the BC846AE6327 lead-free and ROHS compliant?
    Yes, the BC846AE6327 is lead-free and ROHS compliant.
  9. What is the package type of the BC846AE6327?
    The package type is PG-SOT23-3.
  10. What are some common applications of the BC846AE6327?
    Common applications include amplifier circuits, switching circuits, audio and video equipment, automotive and industrial control systems, and general-purpose electronic designs.

Product Attributes

Transistor Type:NPN
Current - Collector (Ic) (Max):100 mA
Voltage - Collector Emitter Breakdown (Max):45 V
Vce Saturation (Max) @ Ib, Ic:600mV @ 5mA, 100mA
Current - Collector Cutoff (Max):15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:110 @ 2mA, 5V
Power - Max:330 mW
Frequency - Transition:250MHz
Operating Temperature:150°C (TJ)
Mounting Type:Surface Mount
Package / Case:TO-236-3, SC-59, SOT-23-3
Supplier Device Package:PG-SOT23
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Similar Products

Part Number BC846AE6327 BC846UE6327 BC846SE6327
Manufacturer Infineon Technologies Infineon Technologies Infineon Technologies
Product Status Active Active Active
Transistor Type NPN - -
Current - Collector (Ic) (Max) 100 mA - -
Voltage - Collector Emitter Breakdown (Max) 45 V - -
Vce Saturation (Max) @ Ib, Ic 600mV @ 5mA, 100mA - -
Current - Collector Cutoff (Max) 15nA (ICBO) - -
DC Current Gain (hFE) (Min) @ Ic, Vce 110 @ 2mA, 5V - -
Power - Max 330 mW - -
Frequency - Transition 250MHz - -
Operating Temperature 150°C (TJ) - -
Mounting Type Surface Mount - -
Package / Case TO-236-3, SC-59, SOT-23-3 - -
Supplier Device Package PG-SOT23 - -

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