BAS1603WE6327HTSA1
  • Share:

Infineon Technologies BAS1603WE6327HTSA1

Manufacturer No:
BAS1603WE6327HTSA1
Manufacturer:
Infineon Technologies
Package:
Tape & Reel (TR)
Description:
DIODE GEN PURP 80V 250MA SOD323
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BAS1603WE6327HTSA1 is a high-speed switching diode produced by Infineon Technologies. This diode is designed for high-speed switching applications and is known for its fast switching times and reliable performance. It is part of Infineon's portfolio of general-purpose diodes, which are widely used in various electronic circuits.

Key Specifications

ParameterValue
Package TypeSOD323
Maximum Forward Current (IF)0.25 A
Maximum Reverse Voltage (VR)80 V
Reverse Recovery Time (trr)4 ns
Power Dissipation (Pd)250 mW
RoHS ComplianceYes
Halogen FreeYes
AEC-Q101 QualifiedYes

Key Features

  • High-speed switching capability, making it suitable for fast switching applications.
  • Electrical insulation, enhancing reliability in various circuit designs.
  • Pb-free (RoHS compliant) package, ensuring environmental compliance.
  • Qualified according to AEC-Q101, which is a standard for automotive electronic components.

Applications

The BAS1603WE6327HTSA1 is versatile and can be used in a variety of applications, including:

  • Automotive systems: Due to its AEC-Q101 qualification, it is suitable for use in automotive electronics.
  • High-speed switching circuits: Its fast recovery time makes it ideal for high-speed switching applications.
  • General-purpose electronic circuits: It can be used in various general-purpose diode applications where reliability and fast switching are required.

Q & A

  1. What is the maximum forward current of the BAS1603WE6327HTSA1 diode?
    The maximum forward current is 0.25 A.
  2. What is the maximum reverse voltage of the BAS1603WE6327HTSA1 diode?
    The maximum reverse voltage is 80 V.
  3. What is the reverse recovery time of the BAS1603WE6327HTSA1 diode?
    The reverse recovery time is 4 ns.
  4. Is the BAS1603WE6327HTSA1 diode RoHS compliant?
    Yes, the diode is RoHS compliant.
  5. What package type does the BAS1603WE6327HTSA1 diode come in?
    The diode comes in a SOD323 package.
  6. Is the BAS1603WE6327HTSA1 diode qualified according to AEC-Q101?
    Yes, it is qualified according to AEC-Q101.
  7. What is the power dissipation of the BAS1603WE6327HTSA1 diode?
    The power dissipation is 250 mW.
  8. Is the BAS1603WE6327HTSA1 diode halogen free?
    Yes, the diode is halogen free.
  9. What are some common applications of the BAS1603WE6327HTSA1 diode?
    It is commonly used in automotive systems, high-speed switching circuits, and general-purpose electronic circuits.
  10. Why is the BAS1603WE6327HTSA1 diode suitable for automotive applications?
    It is suitable for automotive applications due to its AEC-Q101 qualification.

Product Attributes

Diode Type:Standard
Voltage - DC Reverse (Vr) (Max):80 V
Current - Average Rectified (Io):250mA (DC)
Voltage - Forward (Vf) (Max) @ If:1.25 V @ 150 mA
Speed:Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr):4 ns
Current - Reverse Leakage @ Vr:1 µA @ 75 V
Capacitance @ Vr, F:2pF @ 0V, 1MHz
Mounting Type:Surface Mount
Package / Case:SC-76, SOD-323
Supplier Device Package:PG-SOD323-2
Operating Temperature - Junction:150°C (Max)
0 Remaining View Similar

In Stock

$0.38
1,291

Please send RFQ , we will respond immediately.

Same Series
BAS16SH6327XTSA1
BAS16SH6327XTSA1
DIODE ARRAY GP 80V 200MA SOT363
BAS16UE6327HTSA1
BAS16UE6327HTSA1
DIODE ARRAY GP 80V 200MA SC74-6
BAS 16-07L4 E6327
BAS 16-07L4 E6327
DIODE ARRAY GP 80V 200MA TSLP4
BAS16SE6327BTSA1
BAS16SE6327BTSA1
DIODE ARRAY GP 80V 200MA SOT363
BAS16E6327HTSA1
BAS16E6327HTSA1
DIODE GEN PURP 80V 250MA SOT23-3
BAS1602VH6327XTSA1
BAS1602VH6327XTSA1
DIODE GEN PURP 80V 200MA SC79-2
BAS1603WE6327HTSA1
BAS1603WE6327HTSA1
DIODE GEN PURP 80V 250MA SOD323
BAS1602LE6327XTMA1
BAS1602LE6327XTMA1
DIODE GEN PURP 80V 200MA TSLP-2
BAS 16-02W E6327
BAS 16-02W E6327
DIODE GEN PURP 80V 200MA SCD80-2
BAS16WE6433HTMA1
BAS16WE6433HTMA1
DIODE GEN PURP 80V 250MA SOT323
BAS 16 B5003
BAS 16 B5003
DIODE GEN PURP 80V 250MA SOT23-3
BAS16E6393HTSA1
BAS16E6393HTSA1
DIODE GP 80V 250MA SOT23-3

Related Product By Categories

1N4148W_R1_00001
1N4148W_R1_00001
Panjit International Inc.
SOD-123, SWITCHING
1N4007FFG
1N4007FFG
onsemi
DIODE GEN PURP 1000V 1A DO41
BAT54-AU_R1_000A1
BAT54-AU_R1_000A1
Panjit International Inc.
SOT-23, SKY
STTH2R06S
STTH2R06S
STMicroelectronics
DIODE GEN PURP 600V 2A SMC
BAT43WS RRG
BAT43WS RRG
Taiwan Semiconductor Corporation
DIODE SCHOTTKY 30V 200MA SOD323F
STTH15RQ06DY
STTH15RQ06DY
STMicroelectronics
DIODE GEN PURP 600V 15A TO220AC
BAT54-D87Z
BAT54-D87Z
onsemi
30V SOT23 SCHOTTKY DIODE
STTH30L06G
STTH30L06G
STMicroelectronics
DIODE GEN PURP 600V 30A D2PAK
MBR0530T3
MBR0530T3
onsemi
DIODE SCHOTTKY 30V 500MA SOD123
MUR2100E
MUR2100E
onsemi
DIODE GEN PURP 1KV 2A AXIAL
STTH3R02Q
STTH3R02Q
STMicroelectronics
DIODE GEN PURP 200V 3A DO15
MUR420S R6
MUR420S R6
Taiwan Semiconductor Corporation
DIODE GEN PURP 3A DO214AB

Related Product By Brand

BAT5404E6327HTSA1
BAT5404E6327HTSA1
Infineon Technologies
DIODE ARRAY SCHOTTKY 30V SOT23
BAS7006B5003
BAS7006B5003
Infineon Technologies
SCHOTTKY DIODE
BAS40-07WH6327
BAS40-07WH6327
Infineon Technologies
SCHOTTKY DIODE
BC807-16WE6327
BC807-16WE6327
Infineon Technologies
TRANS PNP 45V 0.5A SOT23-3
BC 817-25W E6327
BC 817-25W E6327
Infineon Technologies
TRANS NPN 45V 0.5A SOT323
BC856BWE6327BTSA1
BC856BWE6327BTSA1
Infineon Technologies
TRANS PNP 65V 0.1A SOT323
BC817K25WE6327HTSA1
BC817K25WE6327HTSA1
Infineon Technologies
TRANS NPN 45V 0.5A SOT323
BSC010N04LSCATMA1
BSC010N04LSCATMA1
Infineon Technologies
DIFFERENTIATED MOSFETS
BSS138W E6433
BSS138W E6433
Infineon Technologies
MOSFET N-CH 60V 280MA SOT323-3
TLE62086G
TLE62086G
Infineon Technologies
BRUSH DC MOTOR CONTROLLER
BTS723GWXUMA1
BTS723GWXUMA1
Infineon Technologies
IC PWR SWITCH N-CHAN 1:1 DSO-14
BTS3408GXUMA2
BTS3408GXUMA2
Infineon Technologies
IC PWR SWITCH N-CHAN 1:1 8SOIC