BAS 16-02V E6327
  • Share:

Infineon Technologies BAS 16-02V E6327

Manufacturer No:
BAS 16-02V E6327
Manufacturer:
Infineon Technologies
Package:
Tape & Reel (TR)
Description:
DIODE GEN PURP 80V 200MA SC79-2
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BAS 16-02V E6327 is a general-purpose diode produced by Infineon Technologies. This diode is part of the BAS16 series, known for its reliability and versatility in various electronic applications. The BAS 16-02V E6327 is housed in a SC79-2 package, making it suitable for space-constrained designs while offering robust performance characteristics.

Key Specifications

ParameterSymbolValueUnit
Diode Reverse VoltageVR80V
Peak Reverse VoltageVRM85V
Forward CurrentIF200mA
Non-repetitive Peak Surge Forward Current (t = 1 µs)IFSM2.5A
Total Power Dissipation (TS ≤ 120 °C)Ptot250mW
Junction TemperatureTj150°C
Storage TemperatureTstg-65 to 150°C
Forward Voltage (IF = 10 mA)VF855mV

Key Features

  • General-purpose diode suitable for a wide range of applications.
  • High reverse voltage rating of 80 V and peak reverse voltage of 85 V.
  • Forward current rating of 200 mA.
  • Low forward voltage drop (typ. 855 mV at IF = 10 mA).
  • Compact SC79-2 package for space-efficient designs.
  • High junction temperature rating of 150 °C.

Applications

The BAS 16-02V E6327 is versatile and can be used in various electronic circuits, including but not limited to:

  • Rectifier circuits.
  • Clamping and protection circuits.
  • Switching and power supply applications.
  • Audio and signal processing circuits.
  • Automotive and industrial control systems.

Q & A

  1. What is the maximum reverse voltage rating of the BAS 16-02V E6327?
    The maximum reverse voltage rating is 80 V.
  2. What is the forward current rating of this diode?
    The forward current rating is 200 mA.
  3. What is the typical forward voltage drop at 10 mA?
    The typical forward voltage drop at 10 mA is 855 mV.
  4. What is the junction temperature rating of this diode?
    The junction temperature rating is 150 °C.
  5. What is the storage temperature range for this diode?
    The storage temperature range is -65 to 150 °C.
  6. What type of package does the BAS 16-02V E6327 come in?
    The diode is housed in a SC79-2 package.
  7. What are some common applications for this diode?
    Common applications include rectifier circuits, clamping and protection circuits, switching and power supply applications, audio and signal processing circuits, and automotive and industrial control systems.
  8. What is the non-repetitive peak surge forward current rating for this diode?
    The non-repetitive peak surge forward current rating is 2.5 A for a pulse duration of 1 µs.
  9. What is the total power dissipation rating for this diode at TS ≤ 120 °C?
    The total power dissipation rating is 250 mW.
  10. Is the BAS 16-02V E6327 suitable for high-temperature environments?
    Yes, it is suitable for high-temperature environments with a junction temperature rating of 150 °C.

Product Attributes

Diode Type:Standard
Voltage - DC Reverse (Vr) (Max):80 V
Current - Average Rectified (Io):200mA (DC)
Voltage - Forward (Vf) (Max) @ If:1.25 V @ 150 mA
Speed:Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr):4 ns
Current - Reverse Leakage @ Vr:1 µA @ 75 V
Capacitance @ Vr, F:2pF @ 0V, 1MHz
Mounting Type:Surface Mount
Package / Case:SC-79, SOD-523
Supplier Device Package:PG-SC79-2
Operating Temperature - Junction:150°C (Max)
0 Remaining View Similar

In Stock

-
607

Please send RFQ , we will respond immediately.

Same Series
BAS16SH6727XTSA1
BAS16SH6727XTSA1
DIODE ARRAY GP 80V 200MA SOT363
BAS 16-07L4 E6327
BAS 16-07L4 E6327
DIODE ARRAY GP 80V 200MA TSLP4
BAS16SE6327BTSA1
BAS16SE6327BTSA1
DIODE ARRAY GP 80V 200MA SOT363
BAS16UE6727HTSA1
BAS16UE6727HTSA1
DIODE GP 80V 100MA SC74
BAS16E6327HTSA1
BAS16E6327HTSA1
DIODE GEN PURP 80V 250MA SOT23-3
BAS1602VH6327XTSA1
BAS1602VH6327XTSA1
DIODE GEN PURP 80V 200MA SC79-2
BAS1603WE6327HTSA1
BAS1603WE6327HTSA1
DIODE GEN PURP 80V 250MA SOD323
BAS16E6433HTMA1
BAS16E6433HTMA1
DIODE GEN PURP 80V 250MA SOT23-3
BAS16WH6327XTSA1
BAS16WH6327XTSA1
DIODE GEN PURP 80V 250MA SOT323
BAS16WE6433HTMA1
BAS16WE6433HTMA1
DIODE GEN PURP 80V 250MA SOT323
BAS16WE6327HTSA1
BAS16WE6327HTSA1
DIODE GEN PURP 80V 250MA SOT323
BAS16E6393HTSA1
BAS16E6393HTSA1
DIODE GP 80V 250MA SOT23-3

Similar Products

Part Number BAS 16-02V E6327 BAS 16-02W E6327
Manufacturer Infineon Technologies Infineon Technologies
Product Status Obsolete Obsolete
Diode Type Standard Standard
Voltage - DC Reverse (Vr) (Max) 80 V 80 V
Current - Average Rectified (Io) 200mA (DC) 200mA (DC)
Voltage - Forward (Vf) (Max) @ If 1.25 V @ 150 mA 1.25 V @ 150 mA
Speed Small Signal =< 200mA (Io), Any Speed Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr) 4 ns 4 ns
Current - Reverse Leakage @ Vr 1 µA @ 75 V 1 µA @ 75 V
Capacitance @ Vr, F 2pF @ 0V, 1MHz 2pF @ 0V, 1MHz
Mounting Type Surface Mount Surface Mount
Package / Case SC-79, SOD-523 SC-80
Supplier Device Package PG-SC79-2 SCD-80
Operating Temperature - Junction 150°C (Max) 150°C (Max)

Related Product By Categories

1N4007FFG
1N4007FFG
onsemi
DIODE GEN PURP 1000V 1A DO41
BAS20-E3-18
BAS20-E3-18
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 150V 200MA SOT23
BAW56B5000
BAW56B5000
Infineon Technologies
HIGH SPEED SWITCHING DIODES
PMEG4005EJ,115
PMEG4005EJ,115
Nexperia USA Inc.
DIODE SCHOTTKY 40V 500MA SOD323F
STTH2R02AFY
STTH2R02AFY
STMicroelectronics
DIODE GEN PURP 200V 2A SOD128
SMMDL6050T1G
SMMDL6050T1G
onsemi
DIODE GEN PURP 70V 200MA SOD323
1N4002GP
1N4002GP
Fairchild Semiconductor
RECTIFIER DIODE
BAS16_L99Z
BAS16_L99Z
onsemi
DIODE GEN PURP 85V 200MA SOT23-3
MURD330T4G
MURD330T4G
onsemi
DIODE GEN PURP 300V 3A DPAK
FSV530AF
FSV530AF
onsemi
DIODE SCHOTTKY 30V 5A SMAF
1N4002G R0G
1N4002G R0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 100V 1A DO204AL
BAT54/LF1R
BAT54/LF1R
NXP USA Inc.
DIODE SCHOTTKY TO-236AB

Related Product By Brand

BAW56UE6327
BAW56UE6327
Infineon Technologies
HIGH SPEED SWITCHING DIODE
BAS70-04E6327
BAS70-04E6327
Infineon Technologies
BAS70 - HIGH SPEED SWITCHING, CL
BC 847CW B6327
BC 847CW B6327
Infineon Technologies
TRANS NPN 45V 0.1A SOT323
BC860BWE6327HTSA1
BC860BWE6327HTSA1
Infineon Technologies
TRANS PNP 45V 0.1A SOT-323
BCX53E6327HTSA1
BCX53E6327HTSA1
Infineon Technologies
TRANS PNP 80V 1A SOT89
SPW47N60C3FKSA1
SPW47N60C3FKSA1
Infineon Technologies
MOSFET N-CH 650V 47A TO247-3
IRFP4468PBF
IRFP4468PBF
Infineon Technologies
MOSFET N-CH 100V 195A TO247AC
FF600R12ME4PBOSA1
FF600R12ME4PBOSA1
Infineon Technologies
IGBT MODULE VCES 600V 600A
IRS21867STRPBF
IRS21867STRPBF
Infineon Technologies
IC GATE DRVR HALF-BRIDGE 8SOIC
TLE52062GAUMA1
TLE52062GAUMA1
Infineon Technologies
IC MOTOR DRIVER 5.3V-40V TO263-7
BTS5215LAUMA1
BTS5215LAUMA1
Infineon Technologies
IC PWR SWITCH N-CHAN 1:1 DSO-12
CY7C1061DV33-10BVXIT
CY7C1061DV33-10BVXIT
Infineon Technologies
IC SRAM 16MBIT PARALLEL 48VFBGA