BAS 16-02W E6327
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Infineon Technologies BAS 16-02W E6327

Manufacturer No:
BAS 16-02W E6327
Manufacturer:
Infineon Technologies
Package:
Tape & Reel (TR)
Description:
DIODE GEN PURP 80V 200MA SCD80-2
Delivery:
Payment:
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Product Introduction

Overview

The BAS 16-02W E6327 is a silicon switching diode produced by Infineon Technologies. This diode is designed for general-purpose switching applications and is known for its high reliability and performance. It is packaged in a SOT363 (SC-70-6) package, making it suitable for surface-mount technology (SMT) assembly. The diode is RoHS compliant, ensuring environmental sustainability.

Key Specifications

ParameterSymbolValueUnit
Diode Reverse VoltageVR80V
Peak Reverse VoltageVRM85V
Forward CurrentIF200mA
Non-repetitive Peak Surge Forward CurrentIFSM2.5A
Total Power DissipationPtot250mW
Junction TemperatureTj150°C
Storage TemperatureTstg-65 to 150°C
Forward VoltageVF715 to 1250mV
Reverse Recovery Timet_rr--

Key Features

  • High switching speed and low forward voltage drop.
  • Low reverse current and high reverse voltage rating.
  • Compact SOT363 (SC-70-6) package suitable for SMT assembly.
  • RoHS compliant, ensuring environmental sustainability.
  • High reliability and performance in various switching applications.

Applications

The BAS 16-02W E6327 is suitable for a variety of applications, including:

  • General-purpose switching circuits.
  • Automotive electronics.
  • Consumer electronics.
  • Industrial control systems.
  • Power supply circuits.

Q & A

  1. What is the maximum reverse voltage of the BAS 16-02W E6327? The maximum reverse voltage is 80 V, with a peak reverse voltage of 85 V.
  2. What is the forward current rating of the BAS 16-02W E6327? The forward current rating is 200 mA.
  3. What is the total power dissipation of the BAS 16-02W E6327? The total power dissipation is 250 mW.
  4. What is the junction temperature range of the BAS 16-02W E6327? The junction temperature range is up to 150 °C.
  5. Is the BAS 16-02W E6327 RoHS compliant? Yes, the BAS 16-02W E6327 is RoHS compliant.
  6. What package type is used for the BAS 16-02W E6327? The diode is packaged in a SOT363 (SC-70-6) package.
  7. What are the typical applications of the BAS 16-02W E6327? Typical applications include general-purpose switching circuits, automotive electronics, consumer electronics, industrial control systems, and power supply circuits.
  8. What is the storage temperature range for the BAS 16-02W E6327? The storage temperature range is -65 to 150 °C.
  9. What is the forward voltage drop of the BAS 16-02W E6327? The forward voltage drop ranges from 715 to 1250 mV.
  10. Is the BAS 16-02W E6327 suitable for surface-mount technology (SMT) assembly? Yes, it is suitable for SMT assembly.

Product Attributes

Diode Type:Standard
Voltage - DC Reverse (Vr) (Max):80 V
Current - Average Rectified (Io):200mA (DC)
Voltage - Forward (Vf) (Max) @ If:1.25 V @ 150 mA
Speed:Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr):4 ns
Current - Reverse Leakage @ Vr:1 µA @ 75 V
Capacitance @ Vr, F:2pF @ 0V, 1MHz
Mounting Type:Surface Mount
Package / Case:SC-80
Supplier Device Package:SCD-80
Operating Temperature - Junction:150°C (Max)
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Similar Products

Part Number BAS 16-02W E6327 BAS 16-02V E6327
Manufacturer Infineon Technologies Infineon Technologies
Product Status Obsolete Obsolete
Diode Type Standard Standard
Voltage - DC Reverse (Vr) (Max) 80 V 80 V
Current - Average Rectified (Io) 200mA (DC) 200mA (DC)
Voltage - Forward (Vf) (Max) @ If 1.25 V @ 150 mA 1.25 V @ 150 mA
Speed Small Signal =< 200mA (Io), Any Speed Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr) 4 ns 4 ns
Current - Reverse Leakage @ Vr 1 µA @ 75 V 1 µA @ 75 V
Capacitance @ Vr, F 2pF @ 0V, 1MHz 2pF @ 0V, 1MHz
Mounting Type Surface Mount Surface Mount
Package / Case SC-80 SC-79, SOD-523
Supplier Device Package SCD-80 PG-SC79-2
Operating Temperature - Junction 150°C (Max) 150°C (Max)

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