BUJ103AD,118
  • Share:

WeEn Semiconductors BUJ103AD,118

Manufacturer No:
BUJ103AD,118
Manufacturer:
WeEn Semiconductors
Package:
Tape & Reel (TR)
Description:
TRANS NPN 400V 4A DPAK
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BUJ103AD,118 is a high-voltage, high-speed NPN power switching transistor manufactured by WeEn Semiconductors. This transistor is packaged in a surface-mountable DPAK (SOT428) package, making it suitable for various high-frequency electronic applications. It is designed for use in environments requiring high voltage capability, low thermal resistance, and minimal switching and conduction losses.

Key Specifications

ParameterValueUnit
Voltage - Collector Emitter Breakdown (Max)400V
Vce Saturation (Max) @ Ib, Ic1V @ 600mA, 3A-
Transistor TypeNPN-
DC Current Gain (hFE) (Min) @ Ic, Vce13 @ 500mA, 5V-
Current - Collector (Ic) (Max)4 A-
Power - Max80 W-
Package / CaseTO-252-3, DPak (2 Leads + Tab), SC-63-
Operating Temperature150°C (TJ)-
Mounting TypeSurface Mount-
Current - Collector Cutoff (Max)100µA-

Key Features

  • High voltage capability up to 400V
  • Low thermal resistance
  • Surface mountable DPAK package
  • Very low switching and conduction losses
  • High DC current gain (hFE) of 13 @ 500mA, 5V
  • Maximum collector current of 4A and power dissipation of 80W

Applications

  • High frequency electronic lighting ballasts
  • Converters and inverters
  • Switching regulators
  • Motor control systems
  • DC-to-DC converters

Q & A

  1. What is the maximum collector-emitter breakdown voltage of the BUJ103AD,118?
    The maximum collector-emitter breakdown voltage is 400V.
  2. What is the DC current gain (hFE) of the BUJ103AD,118?
    The DC current gain (hFE) is 13 @ 500mA, 5V.
  3. What is the maximum collector current of the BUJ103AD,118?
    The maximum collector current is 4A.
  4. What is the power dissipation capability of the BUJ103AD,118?
    The power dissipation capability is 80W.
  5. What type of package does the BUJ103AD,118 use?
    The transistor is packaged in a surface-mountable DPAK (SOT428) package.
  6. What is the operating temperature range of the BUJ103AD,118?
    The operating temperature range is up to 150°C (TJ).
  7. Is the BUJ103AD,118 RoHS compliant?
    Yes, the BUJ103AD,118 is RoHS compliant.
  8. What are some common applications of the BUJ103AD,118?
    Common applications include high frequency electronic lighting ballasts, converters, inverters, switching regulators, and motor control systems.
  9. What is the maximum Vce saturation voltage of the BUJ103AD,118?
    The maximum Vce saturation voltage is 1V @ 600mA, 3A.
  10. What is the collector cutoff current of the BUJ103AD,118?
    The collector cutoff current is 100µA.

Product Attributes

Transistor Type:NPN
Current - Collector (Ic) (Max):4 A
Voltage - Collector Emitter Breakdown (Max):400 V
Vce Saturation (Max) @ Ib, Ic:1V @ 600mA, 3A
Current - Collector Cutoff (Max):100µA
DC Current Gain (hFE) (Min) @ Ic, Vce:13 @ 500mA, 5V
Power - Max:80 W
Frequency - Transition:- 
Operating Temperature:150°C (TJ)
Mounting Type:Surface Mount
Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package:DPAK
0 Remaining View Similar

In Stock

-
163

Please send RFQ , we will respond immediately.

Similar Products

Part Number BUJ103AD,118 BUJD103AD,118 BUJ105AD,118 BUJ303AD,118
Manufacturer WeEn Semiconductors NXP USA Inc. WeEn Semiconductors WeEn Semiconductors
Product Status Active Active Active Active
Transistor Type NPN NPN NPN -
Current - Collector (Ic) (Max) 4 A 4 A 8 A -
Voltage - Collector Emitter Breakdown (Max) 400 V 400 V 400 V -
Vce Saturation (Max) @ Ib, Ic 1V @ 600mA, 3A 1V @ 1A, 4A 1V @ 800mA, 4A -
Current - Collector Cutoff (Max) 100µA 100µA 100µA -
DC Current Gain (hFE) (Min) @ Ic, Vce 13 @ 500mA, 5V 11 @ 2A, 5V 13 @ 500mA, 5V -
Power - Max 80 W 80 W 80 W -
Frequency - Transition - - - -
Operating Temperature 150°C (TJ) 150°C (TJ) 150°C (TJ) -
Mounting Type Surface Mount Surface Mount Surface Mount -
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63 -
Supplier Device Package DPAK DPAK DPAK -

Related Product By Categories

PMBT2907A,215
PMBT2907A,215
Nexperia USA Inc.
TRANS PNP 60V 0.6A TO236AB
BCP5616TA
BCP5616TA
Diodes Incorporated
TRANS NPN 80V 1A SOT223-3
BCX55-16,115
BCX55-16,115
Nexperia USA Inc.
TRANS NPN 60V 1A SOT89
BC857B
BC857B
Infineon Technologies
TRANS PNP 45V 0.1A SOT23-3
PMBT4401YS115
PMBT4401YS115
NXP USA Inc.
40 V, 600 MA, DOUBLE NPN SWITCHI
BC857CQCZ
BC857CQCZ
Nexperia USA Inc.
TRANS PNP 45V 0.1A DFN1412D-3
BC856BWHE3-TP
BC856BWHE3-TP
Micro Commercial Co
TRANS PNP 65V 0.1A SOT323
BC857CW-G
BC857CW-G
Comchip Technology
TRANS PNP 45V 0.1A SOT323
BCP69TA
BCP69TA
Diodes Incorporated
TRANS PNP BIPOL 20V 1A SOT-223
BC817-16-7
BC817-16-7
Diodes Incorporated
TRANS NPN 45V 0.8A SOT23-3
TIP122-BP
TIP122-BP
Micro Commercial Co
TRANS NPN DARL 100V 5A TO220AB
BCX56-16 TR
BCX56-16 TR
Central Semiconductor Corp
TRANS NPN 80V 1A SOT89

Related Product By Brand

BYV25D-600,118
BYV25D-600,118
WeEn Semiconductors
DIODE GEN PURP 600V 5A DPAK
BYC20X-600,127
BYC20X-600,127
WeEn Semiconductors
DIODE GEN PURP 500V 20A TO220FP
BYW29ED-200,118
BYW29ED-200,118
WeEn Semiconductors
DIODE GEN PURP 200V 8A DPAK
Z0109MN0,135
Z0109MN0,135
WeEn Semiconductors
TRIAC SENS GATE 600V 1A SC73
BT134W-600,135
BT134W-600,135
WeEn Semiconductors
TRIAC 600V 1A SC73
BTA206X-800CT/DGQ
BTA206X-800CT/DGQ
WeEn Semiconductors
TRIAC STND 800V 6A TO220F
BT136-600D/DG,127
BT136-600D/DG,127
WeEn Semiconductors
TRIAC SENS GATE 600V 4A TO220AB
BTA416Y-800C,127
BTA416Y-800C,127
WeEn Semiconductors
TRIAC 800V 16A TO220AB
BT139B-800F,118
BT139B-800F,118
WeEn Semiconductors
TRIAC 800V 16A D2PAK
BT137-600/DG,127
BT137-600/DG,127
WeEn Semiconductors
TRIAC 600V 8A TO220AB
Z0107NA0QP
Z0107NA0QP
WeEn Semiconductors
TRIAC SENS GATE 800V 1A TO92
Z0109MAML
Z0109MAML
WeEn Semiconductors
Z0109MA/TO-92/STANDARD MARKING