BUJ103AD,118
  • Share:

WeEn Semiconductors BUJ103AD,118

Manufacturer No:
BUJ103AD,118
Manufacturer:
WeEn Semiconductors
Package:
Tape & Reel (TR)
Description:
TRANS NPN 400V 4A DPAK
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BUJ103AD,118 is a high-voltage, high-speed NPN power switching transistor manufactured by WeEn Semiconductors. This transistor is packaged in a surface-mountable DPAK (SOT428) package, making it suitable for various high-frequency electronic applications. It is designed for use in environments requiring high voltage capability, low thermal resistance, and minimal switching and conduction losses.

Key Specifications

ParameterValueUnit
Voltage - Collector Emitter Breakdown (Max)400V
Vce Saturation (Max) @ Ib, Ic1V @ 600mA, 3A-
Transistor TypeNPN-
DC Current Gain (hFE) (Min) @ Ic, Vce13 @ 500mA, 5V-
Current - Collector (Ic) (Max)4 A-
Power - Max80 W-
Package / CaseTO-252-3, DPak (2 Leads + Tab), SC-63-
Operating Temperature150°C (TJ)-
Mounting TypeSurface Mount-
Current - Collector Cutoff (Max)100µA-

Key Features

  • High voltage capability up to 400V
  • Low thermal resistance
  • Surface mountable DPAK package
  • Very low switching and conduction losses
  • High DC current gain (hFE) of 13 @ 500mA, 5V
  • Maximum collector current of 4A and power dissipation of 80W

Applications

  • High frequency electronic lighting ballasts
  • Converters and inverters
  • Switching regulators
  • Motor control systems
  • DC-to-DC converters

Q & A

  1. What is the maximum collector-emitter breakdown voltage of the BUJ103AD,118?
    The maximum collector-emitter breakdown voltage is 400V.
  2. What is the DC current gain (hFE) of the BUJ103AD,118?
    The DC current gain (hFE) is 13 @ 500mA, 5V.
  3. What is the maximum collector current of the BUJ103AD,118?
    The maximum collector current is 4A.
  4. What is the power dissipation capability of the BUJ103AD,118?
    The power dissipation capability is 80W.
  5. What type of package does the BUJ103AD,118 use?
    The transistor is packaged in a surface-mountable DPAK (SOT428) package.
  6. What is the operating temperature range of the BUJ103AD,118?
    The operating temperature range is up to 150°C (TJ).
  7. Is the BUJ103AD,118 RoHS compliant?
    Yes, the BUJ103AD,118 is RoHS compliant.
  8. What are some common applications of the BUJ103AD,118?
    Common applications include high frequency electronic lighting ballasts, converters, inverters, switching regulators, and motor control systems.
  9. What is the maximum Vce saturation voltage of the BUJ103AD,118?
    The maximum Vce saturation voltage is 1V @ 600mA, 3A.
  10. What is the collector cutoff current of the BUJ103AD,118?
    The collector cutoff current is 100µA.

Product Attributes

Transistor Type:NPN
Current - Collector (Ic) (Max):4 A
Voltage - Collector Emitter Breakdown (Max):400 V
Vce Saturation (Max) @ Ib, Ic:1V @ 600mA, 3A
Current - Collector Cutoff (Max):100µA
DC Current Gain (hFE) (Min) @ Ic, Vce:13 @ 500mA, 5V
Power - Max:80 W
Frequency - Transition:- 
Operating Temperature:150°C (TJ)
Mounting Type:Surface Mount
Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package:DPAK
0 Remaining View Similar

In Stock

-
163

Please send RFQ , we will respond immediately.

Similar Products

Part Number BUJ103AD,118 BUJD103AD,118 BUJ105AD,118 BUJ303AD,118
Manufacturer WeEn Semiconductors NXP USA Inc. WeEn Semiconductors WeEn Semiconductors
Product Status Active Active Active Active
Transistor Type NPN NPN NPN -
Current - Collector (Ic) (Max) 4 A 4 A 8 A -
Voltage - Collector Emitter Breakdown (Max) 400 V 400 V 400 V -
Vce Saturation (Max) @ Ib, Ic 1V @ 600mA, 3A 1V @ 1A, 4A 1V @ 800mA, 4A -
Current - Collector Cutoff (Max) 100µA 100µA 100µA -
DC Current Gain (hFE) (Min) @ Ic, Vce 13 @ 500mA, 5V 11 @ 2A, 5V 13 @ 500mA, 5V -
Power - Max 80 W 80 W 80 W -
Frequency - Transition - - - -
Operating Temperature 150°C (TJ) 150°C (TJ) 150°C (TJ) -
Mounting Type Surface Mount Surface Mount Surface Mount -
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63 -
Supplier Device Package DPAK DPAK DPAK -

Related Product By Categories

PMBT2907A,215
PMBT2907A,215
Nexperia USA Inc.
TRANS PNP 60V 0.6A TO236AB
BCP54-10,135
BCP54-10,135
Nexperia USA Inc.
TRANS NPN 45V 1A SOT223
BC858B,235
BC858B,235
Nexperia USA Inc.
TRANS PNP 30V 0.1A TO236AB
BDW93CTU
BDW93CTU
onsemi
TRANS NPN DARL 100V 12A TO220-3
MJE5731AG
MJE5731AG
onsemi
TRANS PNP 375V 1A TO220
BC857CW,135
BC857CW,135
Nexperia USA Inc.
TRANS PNP 45V 0.1A SOT323
BC858B-7-F
BC858B-7-F
Diodes Incorporated
TRANS PNP 30V 0.1A SOT23-3
2N6045
2N6045
Solid State Inc.
TRANS NPN DARL 100V 8A TO220
TIP122FP
TIP122FP
STMicroelectronics
TRANS NPN DARL 100V 5A TO220FP
BC857CWE6327BTSA1
BC857CWE6327BTSA1
Infineon Technologies
TRANS PNP 45V 0.1A SOT323
BCV47E6393HTSA1
BCV47E6393HTSA1
Infineon Technologies
TRANS NPN DARL 60V 0.5A SOT23
TIP31ATU_F129
TIP31ATU_F129
onsemi
TRANS NPN 60V 3A TO220-3

Related Product By Brand

BYQ28E-200E,127
BYQ28E-200E,127
WeEn Semiconductors
DIODE ARRAY GP 200V 10A TO220AB
BYC8X-600,127
BYC8X-600,127
WeEn Semiconductors
DIODE GEN PURP 600V 8A TO220FP
NXPSC10650B6J
NXPSC10650B6J
WeEn Semiconductors
DIODE SCHOTTKY 650V 10A D2PAK
BT151X-650LTNQ
BT151X-650LTNQ
WeEn Semiconductors
SCR 650V 12A TO220F
BT151X-800R,127
BT151X-800R,127
WeEn Semiconductors
SCR 800V 12A TO220-3
BT148-500R,127
BT148-500R,127
WeEn Semiconductors
SCR 500V 4A SOT82-3
BT151X-800C,127
BT151X-800C,127
WeEn Semiconductors
SCR 800V 12A TO220-3
BTA316B-800C,118
BTA316B-800C,118
WeEn Semiconductors
TRIAC 800V 16A D2PAK
BT138-600-0Q
BT138-600-0Q
WeEn Semiconductors
BT138-600-0/SIL3P/STANDARD MAR
BT139X-800/L02Q
BT139X-800/L02Q
WeEn Semiconductors
BT139X-800/L02/TO-220F/STANDAR
ACTT2X-800ETNQ
ACTT2X-800ETNQ
WeEn Semiconductors
ACTT2X-800ETN TO-220F STANDARD
PHE13005,127
PHE13005,127
WeEn Semiconductors
TRANS NPN 400V 4A TO220AB