BUJ103AD,118
  • Share:

WeEn Semiconductors BUJ103AD,118

Manufacturer No:
BUJ103AD,118
Manufacturer:
WeEn Semiconductors
Package:
Tape & Reel (TR)
Description:
TRANS NPN 400V 4A DPAK
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BUJ103AD,118 is a high-voltage, high-speed NPN power switching transistor manufactured by WeEn Semiconductors. This transistor is packaged in a surface-mountable DPAK (SOT428) package, making it suitable for various high-frequency electronic applications. It is designed for use in environments requiring high voltage capability, low thermal resistance, and minimal switching and conduction losses.

Key Specifications

ParameterValueUnit
Voltage - Collector Emitter Breakdown (Max)400V
Vce Saturation (Max) @ Ib, Ic1V @ 600mA, 3A-
Transistor TypeNPN-
DC Current Gain (hFE) (Min) @ Ic, Vce13 @ 500mA, 5V-
Current - Collector (Ic) (Max)4 A-
Power - Max80 W-
Package / CaseTO-252-3, DPak (2 Leads + Tab), SC-63-
Operating Temperature150°C (TJ)-
Mounting TypeSurface Mount-
Current - Collector Cutoff (Max)100µA-

Key Features

  • High voltage capability up to 400V
  • Low thermal resistance
  • Surface mountable DPAK package
  • Very low switching and conduction losses
  • High DC current gain (hFE) of 13 @ 500mA, 5V
  • Maximum collector current of 4A and power dissipation of 80W

Applications

  • High frequency electronic lighting ballasts
  • Converters and inverters
  • Switching regulators
  • Motor control systems
  • DC-to-DC converters

Q & A

  1. What is the maximum collector-emitter breakdown voltage of the BUJ103AD,118?
    The maximum collector-emitter breakdown voltage is 400V.
  2. What is the DC current gain (hFE) of the BUJ103AD,118?
    The DC current gain (hFE) is 13 @ 500mA, 5V.
  3. What is the maximum collector current of the BUJ103AD,118?
    The maximum collector current is 4A.
  4. What is the power dissipation capability of the BUJ103AD,118?
    The power dissipation capability is 80W.
  5. What type of package does the BUJ103AD,118 use?
    The transistor is packaged in a surface-mountable DPAK (SOT428) package.
  6. What is the operating temperature range of the BUJ103AD,118?
    The operating temperature range is up to 150°C (TJ).
  7. Is the BUJ103AD,118 RoHS compliant?
    Yes, the BUJ103AD,118 is RoHS compliant.
  8. What are some common applications of the BUJ103AD,118?
    Common applications include high frequency electronic lighting ballasts, converters, inverters, switching regulators, and motor control systems.
  9. What is the maximum Vce saturation voltage of the BUJ103AD,118?
    The maximum Vce saturation voltage is 1V @ 600mA, 3A.
  10. What is the collector cutoff current of the BUJ103AD,118?
    The collector cutoff current is 100µA.

Product Attributes

Transistor Type:NPN
Current - Collector (Ic) (Max):4 A
Voltage - Collector Emitter Breakdown (Max):400 V
Vce Saturation (Max) @ Ib, Ic:1V @ 600mA, 3A
Current - Collector Cutoff (Max):100µA
DC Current Gain (hFE) (Min) @ Ic, Vce:13 @ 500mA, 5V
Power - Max:80 W
Frequency - Transition:- 
Operating Temperature:150°C (TJ)
Mounting Type:Surface Mount
Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package:DPAK
0 Remaining View Similar

In Stock

-
163

Please send RFQ , we will respond immediately.

Similar Products

Part Number BUJ103AD,118 BUJD103AD,118 BUJ105AD,118 BUJ303AD,118
Manufacturer WeEn Semiconductors NXP USA Inc. WeEn Semiconductors WeEn Semiconductors
Product Status Active Active Active Active
Transistor Type NPN NPN NPN -
Current - Collector (Ic) (Max) 4 A 4 A 8 A -
Voltage - Collector Emitter Breakdown (Max) 400 V 400 V 400 V -
Vce Saturation (Max) @ Ib, Ic 1V @ 600mA, 3A 1V @ 1A, 4A 1V @ 800mA, 4A -
Current - Collector Cutoff (Max) 100µA 100µA 100µA -
DC Current Gain (hFE) (Min) @ Ic, Vce 13 @ 500mA, 5V 11 @ 2A, 5V 13 @ 500mA, 5V -
Power - Max 80 W 80 W 80 W -
Frequency - Transition - - - -
Operating Temperature 150°C (TJ) 150°C (TJ) 150°C (TJ) -
Mounting Type Surface Mount Surface Mount Surface Mount -
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63 -
Supplier Device Package DPAK DPAK DPAK -

Related Product By Categories

SMMBTA92LT1G
SMMBTA92LT1G
onsemi
TRANS PNP 300V 0.5A SOT23-3
TIP142T
TIP142T
STMicroelectronics
TRANS NPN DARL 100V 10A TO220
BCP56-10
BCP56-10
Diotec Semiconductor
TRANS NPN 80V 1A SOT223
2PD601ARL,235
2PD601ARL,235
Nexperia USA Inc.
TRANS NPN 50V 0.1A TO236AB
TIP30C
TIP30C
NTE Electronics, Inc
TRANS PNP 100V 1A TO220
BC846B/DG/B4215
BC846B/DG/B4215
NXP USA Inc.
SMALL SIGNAL BIPOLAR TRANSISTOR
BC858B RFG
BC858B RFG
Taiwan Semiconductor Corporation
TRANS PNP 30V 0.1A SOT23
2N2907AP
2N2907AP
Microchip Technology
SMALL-SIGNAL BJT
BC857AT,115
BC857AT,115
NXP USA Inc.
TRANS PNP 45V 0.1A SC75
BC857BLT1
BC857BLT1
onsemi
TRANS PNP 45V 100MA SOT23
TIP30C-S
TIP30C-S
Bourns Inc.
TRANS PNP 100V 1A TO220
BC807-25W/MIX
BC807-25W/MIX
Nexperia USA Inc.
TRANS PNP 45V 0.5A SOT323

Related Product By Brand

BYV34-400,127
BYV34-400,127
WeEn Semiconductors
DIODE ARRAY GP 400V 20A TO220AB
NXPSC10650Q
NXPSC10650Q
WeEn Semiconductors
DIODE SCHOTTKY 650V 10A TO220AC
BYC15X-600,127
BYC15X-600,127
WeEn Semiconductors
DIODE GEN PURP 500V 15A TO220F
NXPSC10650DJ
NXPSC10650DJ
WeEn Semiconductors
DIODE SCHOTTKY 650V 10A DPAK
BT151X-500RNQ
BT151X-500RNQ
WeEn Semiconductors
SCR 500V TO220-3
BTA201-800ER,116
BTA201-800ER,116
WeEn Semiconductors
TRIAC SENS GATE 800V 1A TO92-3
BT138-600E/DGQ
BT138-600E/DGQ
WeEn Semiconductors
TRIAC SENS GATE 600V 12A TO220F
BTA316-800C/DGQ
BTA316-800C/DGQ
WeEn Semiconductors
TRIAC 800V 16A TO220AB
BTA420X-800CT/L02Q
BTA420X-800CT/L02Q
WeEn Semiconductors
TRIAC 800V 20A
ACTT2X-800ETNQ
ACTT2X-800ETNQ
WeEn Semiconductors
ACTT2X-800ETN TO-220F STANDARD
ACTT2S-800ETNJ
ACTT2S-800ETNJ
WeEn Semiconductors
ACTT2S-800ETNJ/DPAK
BUJ103AD,118
BUJ103AD,118
WeEn Semiconductors
TRANS NPN 400V 4A DPAK