BUJ100LR,126
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WeEn Semiconductors BUJ100LR,126

Manufacturer No:
BUJ100LR,126
Manufacturer:
WeEn Semiconductors
Package:
Tape & Box (TB)
Description:
TRANS NPN 400V 1A TO92-3
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BUJ100LR,126 is a bipolar junction transistor (BJT) produced by WeEn Semiconductors. It is an NPN transistor, known for its high voltage and current handling capabilities, making it suitable for a variety of applications in electronic circuits. This transistor is packaged in a TO-92-3 through-hole configuration, which is widely used in industrial and consumer electronics.

Key Specifications

ParameterValue
Collector-Emitter Voltage (VCEO) Max400 V
Collector-Base Voltage (VCBO)700 V
Collector-Emitter Saturation Voltage240 mV
Maximum DC Collector Current1 A
Power Dissipation (Pd)2.1 W
Package TypeThrough Hole TO-92-3

Key Features

  • High collector-emitter voltage rating of 400 V, making it suitable for high-voltage applications.
  • Maximum DC collector current of 1 A, allowing for substantial current handling.
  • Low collector-emitter saturation voltage of 240 mV, which minimizes power loss in saturation mode.
  • Through-hole TO-92-3 packaging, which is easy to use in a variety of circuit designs.
  • High power dissipation of 2.1 W, enabling the transistor to handle significant power loads.

Applications

The BUJ100LR,126 is versatile and can be used in various electronic circuits, including:

  • Power amplifiers and switching circuits due to its high voltage and current ratings.
  • Industrial control systems where high reliability and robustness are required.
  • Consumer electronics such as audio amplifiers and power supplies.
  • Automotive electronics where high voltage tolerance is necessary.

Q & A

  1. What is the collector-emitter voltage rating of the BUJ100LR,126 transistor?
    The collector-emitter voltage rating is 400 V.
  2. What is the maximum DC collector current of the BUJ100LR,126?
    The maximum DC collector current is 1 A.
  3. What is the collector-emitter saturation voltage of the BUJ100LR,126?
    The collector-emitter saturation voltage is 240 mV.
  4. What is the power dissipation of the BUJ100LR,126 transistor?
    The power dissipation is 2.1 W.
  5. What is the package type of the BUJ100LR,126 transistor?
    The package type is Through Hole TO-92-3.
  6. What are some common applications of the BUJ100LR,126 transistor?
    Common applications include power amplifiers, industrial control systems, consumer electronics, and automotive electronics.
  7. Who is the manufacturer of the BUJ100LR,126 transistor?
    The manufacturer is WeEn Semiconductors.
  8. What is the polarity of the BUJ100LR,126 transistor?
    The polarity is NPN.
  9. What is the collector-base voltage rating of the BUJ100LR,126 transistor?
    The collector-base voltage rating is 700 V.
  10. Where can I find the datasheet for the BUJ100LR,126 transistor?
    The datasheet can be found on the Mouser or Digi-Key websites, or through the manufacturer's official resources.

Product Attributes

Transistor Type:NPN
Current - Collector (Ic) (Max):1 A
Voltage - Collector Emitter Breakdown (Max):400 V
Vce Saturation (Max) @ Ib, Ic:1.5V @ 250mA, 750mA
Current - Collector Cutoff (Max):1mA
DC Current Gain (hFE) (Min) @ Ic, Vce:10 @ 400mA, 5V
Power - Max:2.1 W
Frequency - Transition:- 
Operating Temperature:150°C (TJ)
Mounting Type:Through Hole
Package / Case:TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Supplier Device Package:TO-92-3
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Same Series
BUJ100LR,412
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